Plasma processing apparatus and method

Abstract

In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.

1 . A plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed,
 wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and   wherein an impedance varying circuit varying impedance on said chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to said chemical component emitting member.   
     
     
         2 . The plasma processing apparatus according to  claim 1 ,
 wherein said chemical component emitting member is disposed on a lower surface of the electrode.   
     
     
         3 . The plasma processing apparatus according to  claim 1 ,
 wherein said chemical component emitting member is a focus ring provided around a periphery of the electrode.   
     
     
         4 . The plasma processing apparatus according to  claim 1 ,
 wherein said chemical component emitting member is disposed around the plasma generated in the process vessel.   
     
     
         5 . The plasma processing apparatus according to  claim 1 ,
 wherein the chemical component necessary for processing the substrate is oxygen.   
     
     
         6 . The plasma processing apparatus according to  claim 5 ,
 wherein said chemical component emitting member is made of SiO 2 .   
     
     
         7 . The plasma processing apparatus according to  claim 1 ,
 wherein the chemical component necessary for processing the substrate is fluorine.   
     
     
         8 . The plasma processing apparatus according to  claim 7 ,
 wherein said chemical component emitting member is made of fluorocarbon resin.