Methods of manufacturing integrated circuit devices including a transcription-preventing pattern

Abstract

Integrated circuit devices are provided including a first single-crystalline layer and an insulating layer pattern on the first single-crystalline layer. The insulating layer pattern has an opening therein that partially exposes the first single-crystalline layer. A seed layer is in the opening. A second single-crystalline layer is on the insulating layer pattern and the seed layer. The second single-crystalline layer has a crystalline structure substantially the same as that of the seed layer. A transcription-preventing pattern is on the second single-crystalline layer and a third single-crystalline layer on the transcription-preventing pattern and the second single-crystalline layer. The transcription-preventing pattern is configured to limit transcription of defective portions in the second single-crystalline layer into the third single-crystalline layer.

1 . A method of manufacturing an integrated circuit device, comprising:
 forming an insulating layer pattern on a first single-crystalline layer, the insulating layer pattern having an opening that partially exposes the first single-crystalline layer;   forming a seed layer in the opening;   forming a first amorphous crystalline layer on the insulating layer pattern and the seed layer;   transforming the first amorphous crystalline layer into a second single-crystalline layer by laser annealing, the second single-crystalline layer having a crystalline structure substantially the same as that of the seed layer;   forming a transcription-preventing pattern on the second single-crystalline layer, the transcription-preventing pattern being configured to limit transcription of defective portions in the second single-crystalline layer into an overlying layer of the integrated circuit device;   forming a second amorphous crystalline layer on the transcription-preventing pattern and the second single-crystalline layer; and   transforming the second amorphous crystalline layer into a third single-crystalline layer by laser annealing, the third single-crystalline layer having a crystalline structure substantially the same as that of the second single-crystalline layer.   
     
     
         2 . The method of  claim 1 , wherein forming the seed layer includes filling the opening with the seed layer, the seed layer having a crystalline structure substantially the same as that of the first single-crystalline layer. 
     
     
         3 . The method of  claim 1 , wherein the third single-crystalline layer is formed to have a thickness greater than that of the second single-crystalline layer. 
     
     
         4 . The method of  claim 1 , further comprising:
 forming a gate pattern on the third single-crystalline layer; and   forming source/drain regions in the third single-crystalline layer that extend under and contact the sidewalls of the gate pattern, wherein the transcription-preventing pattern is formed adjacent to the source/drain regions.   
     
     
         5 . The method of  claim 4 , further comprising forming an isolation layer on the second single-crystalline layer, wherein the isolation layer is formed to have a thickness greater than that of the transcription-preventing pattern, wherein forming the transcription-preventing layer and forming the isolation layer comprises concurrently forming the transcription-preventing layer and the isolation layer using a laser induced epitaxial growth (LEG) process. 
     
     
         6 . The method of  claim 1 , wherein forming the seed layer and forming the first amorphous crystalline layer comprise forming the layers using an epitaxial growth process. 
     
     
         7 . The method of  claim 6 , wherein forming the transcription-preventing layer and forming the second amorphous crystalline layer comprise forming the transcription-preventing layer and forming the second amorphous crystalline layer in a same chamber. 
     
     
         8 . The method of  claim 2 , wherein:
 transforming the first amorphous crystalline layer comprises transforming the first amorphous crystalline layer into a second single-crystalline layer by irradiating a laser beam onto the amorphous crystalline layer; and   forming the transcription-preventing pattern includes forming a first transcription-preventing layer on the second single-crystalline layer, the first transcription-preventing layer preventing defective portions in the second single-crystalline layer from being transcribed into an upper layer.   
     
     
         9 . The method of  claim 8 , further comprising:
 sequentially and repeatedly forming a second insulating layer to an m-th insulating layer, a second seed layer to an m-th seed layer, wherein m is a natural number no less than 3, a fourth single-crystalline layer to an n-th single-crystalline layer, wherein n is an even number no less than 6, a second transcription-preventing layer to an o-th transcription-preventing layer, wherein o is a natural number no less than 3, a fifth crystalline layer to a p-th crystalline layer, wherein p is an odd number no less than 7on the third single-crystalline layer,   wherein the second insulating layer to the m-th insulating layer are substantially the same as the first insulating layer, the second seed layer to the m-th seed layer are substantially the same as the first seed layer, the fourth single-crystalline layer to the n-th single-crystalline layer are substantially the same as the second single-crystalline layer, the second transcription-preventing layer to the o-th transcription-preventing layer are substantially the same as the first transcription-preventing layer, and the fifth crystalline layer to the p-th crystalline layer are substantially the same as the third single-crystalline layer.