US2011135883A1PendingUtilityA1
Method of manufacturing a substrate for a microelectronic device, and substrate formed thereby
Est. expiryMar 27, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H05K 3/0032H05K 3/387Y10T428/24612H05K 2203/1152Y10T428/24355H05K 2203/1383H05K 3/465H05K 3/0055H05K 3/4661H05K 3/108H05K 2203/066
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Abstract
A method of manufacturing a substrate for a microelectronic device comprises providing a dielectric material ( 120, 220, 920 ) as a build-up layer of the substrate, applying a primer ( 140, 240, 940 ) to a surface ( 121, 221, 921 ) of the dielectric material, and forming an electrically conductive layer ( 150, 250, 950 ) over the primer. In another embodiment, the method comprises providing the dielectric material, forming the feature extending into the dielectric material, forming the electrically conductive layer over the dielectric material, applying the primer to a surface of the electrically conductive layer and attaching a dielectric layer ( 960 ) to the primer.
Claims
exact text as granted — not AI-modified1 . A substrate for a microelectronic device comprising:
a dielectric material that is a build-up layer of the substrate; a feature extending into the dielectric material; a primer over a surface of the dielectric material; and an electrically conductive layer adjacent to the primer.
2 . The substrate of claim 1 wherein:
at least a portion of the electrically conductive layer is located above the surface of the dielectric material.
3 . The substrate of claim 1 wherein:
the electrically conductive layer is embedded within the dielectric material.
4 . The substrate of claim 1 further comprising:
a dielectric layer over the electrically conductive layer.Cited by (0)
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