Methods of Forming Conductive Features and Structures Thereof

Abstract

Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.

1 . A semiconductor device comprising:
 a workpiece including a conductive region;   a first insulating material disposed over the workpiece;   a first opening for a first portion of a conductive feature disposed within the first insulating material;   a second insulating material disposed over the first insulating material;   a second opening for a second portion of the conductive feature disposed in the second insulating material; and   a conductive material filling the first opening and the second opening to form the conductive feature, wherein the conductive feature is electrically coupled to the conductive region, wherein the first portion of the conductive feature comprises a first width in the first insulating material, and wherein the second portion of the conductive feature comprises a second width in at least a portion of the second insulating material, the second width being greater than the first width.   
     
     
         2 . The device according to  claim 1 , wherein the conductive feature comprises substantially the first width in a bottom portion of the second insulating material. 
     
     
         3 . The device according to  claim 1 , wherein the conductive feature comprises substantially the second width in a top portion of the second insulating material. 
     
     
         4 . The device according to  claim 1 , wherein the second opening comprises tapered sidewalls in the second insulating material. 
     
     
         5 . The device according to  claim 1 , wherein the first insulating material comprises a stress-inducing material and an insulating material disposed over the stress-inducing material. 
     
     
         6 . The device according to  claim 1 , wherein the conductive material comprises a liner continuously lining sidewalls of the first opening and the second opening. 
     
     
         7 . The device according to  claim 6 , wherein the liner is disposed over a bottom surface of the first opening. 
     
     
         8 . A semiconductor device comprising:
 a first insulating material disposed over a workpiece having a conductive region;   a second insulating material disposed over the first insulating material;   a first opening disposed within the first insulating material, wherein at least a portion of the first opening comprises a first width;   a second opening disposed in the second insulating material, wherein at least a portion of the second opening comprises a second width, the second width being greater than the first width, the second opening and the first opening forming a first single continuous opening; and   a conductive material filling the first opening and the second opening, wherein the conductive material filling the first opening and the second opening is electrically coupled to the conductive region.   
     
     
         9 . The device according to  claim 8 , wherein the first opening comprises substantially the first width in a bottom portion of the second insulating material. 
     
     
         10 . The device according to  claim 8 , wherein the second opening comprises tapered sidewalls in the second insulating material. 
     
     
         11 . The device according to  claim 8 , wherein the first insulating material comprises a stress-inducing material and an insulating material disposed over the stress-inducing material. 
     
     
         12 . The device according to  claim 8 , wherein the conductive material comprises a liner continuously lining sidewalls of the first opening and the second opening. 
     
     
         13 . The device according to  claim 12 , wherein the liner is disposed over a bottom surface of the first opening. 
     
     
         14 . The device according to  claim 8 , further comprising:
 a gate electrode disposed over the workpiece;   a third opening disposed within the first insulating material, the third opening disposed over the gate electrode, wherein at least a portion of the third opening comprises a third width; and   a fourth opening disposed in the second insulating material, wherein at least a portion of the fourth opening comprises a fourth width, the fourth width being greater than the third width, the fourth opening and the third opening forming a second single continuous opening, wherein the conductive material fills the third opening and the fourth opening, and wherein the conductive material filling the third opening and the fourth opening electrically couples to the gate electrode.   
     
     
         15 . A semiconductor device comprising:
 a first insulating material disposed over a workpiece;   a second insulating material disposed over the first insulating material;   a gate electrode disposed over the workpiece;   a first opening disposed in the first insulating material, the first opening disposed over the gate electrode, wherein at least a portion of the first opening comprises a first width;   a second opening disposed in the second insulating material, wherein at least a portion of the second opening comprises a second width, the second width being greater than the first width, the second opening and the first opening forming a first single continuous opening; and   a conductive material filling the first opening and the second opening, wherein the conductive material filling the first opening and the second opening is electrically coupled to the gate electrode.   
     
     
         16 . The device according to  claim 15 , wherein the second opening has a tapered sidewall. 
     
     
         17 . The device according to  claim 15 , wherein the first opening comprises substantially the first width in a bottom portion of the second insulating material. 
     
     
         18 . The device according to  claim 15 , wherein the second opening comprises tapered sidewalls in the second insulating material. 
     
     
         19 . The device according to  claim 15 , wherein the conductive material comprises a liner continuously lining sidewalls of the first opening and the second opening, wherein the liner is disposed over a bottom surface of the first opening. 
     
     
         20 . The device according to  claim 15 , further comprising:
 a third opening disposed within the first insulating material, the third opening disposed over a conductive region of the workpiece, wherein at least a portion of the third opening comprises a third width; and   a fourth opening disposed in the second insulating material, wherein at least a portion of the fourth opening comprises a fourth width, the fourth width being greater than the third width, the fourth opening and the third opening forming a second single continuous opening, wherein the conductive material fills the third opening and the fourth opening, and wherein the conductive material filling the third opening and the fourth opening electrically couples to the conductive region.