Methods of selectively depositing an epitaxial layer

Abstract

Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber.

1 . Apparatus for processing a substrate comprising:
 a process chamber having a substrate support disposed therein;   a deposition gas source coupled to the process chamber;   an etching gas source coupled to the process chamber, the etching gas source comprising:
 a hydrogen and halogen gas source; and 
 a germanium gas source; 
   an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and   an exhaust system coupled to the process chamber to control the pressure in the process chamber.   
     
     
         2 . The apparatus of  claim 1 , wherein the hydrogen and halogen gas source provides at least one of hydrogen chloride (HCl), hydrogen fluoride (HF), hydrogen bromide (HBr), or hydrogen iodide (HI). 
     
     
         3 . The apparatus of  claim 1 , wherein the germanium gas source provides at least one of germane (GeH 4 ) or germanium chloride (GeCl 4 ). 
     
     
         4 . The apparatus of  claim 1 , wherein the etching gas source further comprises a phosphorus gas source. 
     
     
         5 . The apparatus of  claim 4 , wherein the phosphorus gas source provides at least one of phosphine (PH 3 ), phosphorus trichloride (PCl 3 ), or phosphorus pentachloride (PCl 5 ). 
     
     
         6 . The apparatus of  claim 1 , wherein the etching gas source further comprises a boron gas source. 
     
     
         7 . The apparatus of  claim 6 , wherein the boron gas source provides at least one of boron hydride (BH 3 ) or boron trichloride (BCl 3 ). 
     
     
         8 . The apparatus of  claim 1 , wherein the etching gas source provides hydrogen chloride (HCl) and germane (GeH 4 ). 
     
     
         9 . The apparatus of  claim 1 , wherein the deposition gas source comprises a silicon source, a carbon source, and an n-type dopant source. 
     
     
         10 . The apparatus of  claim 9 , wherein the silicon source provides at least one of a silane, a halogenated silane, or an organosilane. 
     
     
         11 . The apparatus of  claim 10 , wherein the silicon source provides a silane comprising at least one of silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ), or neopentasilane (Si 5 H 12 ). 
     
     
         12 . The apparatus of  claim 10 , wherein the silicon source provides a halogenated silane comprising at least one of hexachlorodisilane (Si 2 Cl 6 ), tetrachlorosilane (SiCl 4 ), dichlorosilane (Cl 2 SiH 2 ), or trichlorosilane (Cl 3 SiH). 
     
     
         13 . The apparatus of  claim 10 , wherein the silicon source provides an organosilane comprising at least one of methylsilane ((CH 3 )SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), ethylsilane ((CH 3 CH 2 )SiH 3 ), methyldisilane ((CH 3 )Si 2 H 5 ), dimethyldisilane ((CH 3 ) 2 Si 2 H 4 ), or hexamethyldisilane ((CH 3 ) 6 Si 2 ). 
     
     
         14 . The apparatus of  claim 9 , wherein the carbon source provides at least one of methylsilane (CH 3 SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), ethylsilane (CH 3 CH 2 SiH 3 ), methane (CH 4 ), ethylene (C 2 H 4 ), ethyne (C 2 H 2 ), propane (C 3 H 8 ), propene (C 3 H 6 ), or butyne (C 4 H 6 ), 
     
     
         15 . The apparatus of  claim 9 , wherein the n-type dopant source provides at least one of arsine (AsH 3 ), phosphine (PH 3 ), trimethylphosphine ((CH 3 ) 3 P), dimethylphosphine ((CH 3 ) 2 PH), triethylphosphine ((CH 3 CH 2 ) 3 P), or diethylphosphine ((CH 3 CH 2 ) 2 PH). 
     
     
         16 . The apparatus of  claim 1 , wherein the exhaust system is adapted to control the pressure in the process chamber to vacuum pressures below about 150 Torr. 
     
     
         17 . Apparatus for processing a substrate comprising:
 a process chamber having a substrate support disposed therein;   a deposition gas source coupled to the process chamber;   an etching gas source coupled to the process chamber, the etching gas source comprising:
 a first gas source to provide a first gas comprising hydrogen and halogen; and 
 a second gas source to provide a second gas comprising germanium; 
   an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and   an exhaust system coupled to the process chamber to control the pressure in the process chamber.