Inventor · disambiguated record
Saurabh Chopra
Also filed as: CHOPRA SAURABH
23 granted patents·24 pending applications·125 citations·filing 2004–2025
94Inventor score
Files withAPPLIED MATERIALS INC39YE ZHIYUAN4VISA INT SERVICE ASS2UNIV CLEMSON1UNIV NORTH CAROLINA STATE1
Top patents by PatentIndex Score
47 records- 0196US9683308B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2014·Granted Jun 20, 2017·8 cites·7 claims
- 0292US7211458B2Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devicesUNIV NORTH CAROLINA STATE·Filed 2005·Granted May 1, 2007·26 cites·39 claims
- 0391US11152479B2Semiconductor device, method of making a semiconductor device, and processing systemAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 0491US6997039B2Carbon nanotube based resonant-circuit sensorUNIV CLEMSON·Filed 2004·Granted Feb 14, 2006·53 cites·30 claims
- 0590US11195923B2Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2019·Granted Dec 7, 2021·5 cites·13 claims
- 0690US2024301584A1Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0788US11965241B2Cluster tools, systems, and methods having one or more pressure stabilization chambersAPPLIED MATERIALS INC·Filed 2022·Granted Apr 23, 2024·2 cites·19 claims
- 0885US12492487B2Movable central reflectors of semiconductor processing equipment, and related systems and methodsAPPLIED MATERIALS INC·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 0985US7960236B2Phosphorus containing Si epitaxial layers in N-type source/drain junctionsAPPLIED MATERIALS INC·Filed 2007·Granted Jun 14, 2011·12 cites·13 claims
- 1082US11887079B2Central hub reconciliation system and methodVISA INT SERVICE ASS·Filed 2021·Granted Jan 30, 2024·4 cites·9 claims
- 1181US10837122B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2019·Granted Nov 17, 2020·0 cites·19 claims
- 1278US9460918B2Epitaxy of high tensile silicon alloy for tensile strain applicationsAPPLIED MATERIALS INC·Filed 2013·Granted Oct 4, 2016·3 cites·6 claims
- 1376US7772074B2Method of forming conformal silicon layer for recessed source-drainAPPLIED MATERIALS INC·Filed 2007·Granted Aug 10, 2010·5 cites·20 claims
- 1473US10428441B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2017·Granted Oct 1, 2019·0 cites·14 claims
- 1573US2021010160A1Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 1670US7776698B2Selective formation of silicon carbon epitaxial layerAPPLIED MATERIALS INC·Filed 2007·Granted Aug 17, 2010·3 cites·19 claims
- 1767US2024018688A1Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operationsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1866US2025210319A1Electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1966US2025210304A1Electrode and Coil Configurations For Processing Chambers and Related Chamber Kits, Apparatus, and Methods For Semiconductor ManufacturingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2066US2025226186A1Heaters and plasma generators for gas activation, and related chamber and for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2164US8207023B2Methods of selectively depositing an epitaxial layerYE ZHIYUAN·Filed 2010·Granted Jun 26, 2012·1 cites·20 claims
- 2263US2025231066A1Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamberAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2362US12428731B2Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustabilityAPPLIED MATERIALS INC·Filed 2022·Granted Sep 30, 2025·0 cites·22 claims
- 2460US2025210314A1Plasma injection configurations for processing chambers, and related apparatus, chamber kits, and methodsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2560US2024347602A1Reduced strain heteroepitaxy assembly for three-dimensional device and method of fabrication thereforAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2660US2025210315A1Modular processing chambers and related heating configurations, methods, apparatus, and modules for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2759US2022093749A1Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2858US12196617B2Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamberAPPLIED MATERIALS INC·Filed 2020·Granted Jan 14, 2025·0 cites·20 claims
- 2958US2025201594A1Modular processing chambers and related heating configurations, methods, apparatus, and modules for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3058US2025251285A1Substrate processing systems, methods, and related apparatus and chambers, for detecting processing shiftsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3156US12068155B2Anisotropic sige:b epitaxial film growth for gate all around transistorAPPLIED MATERIALS INC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 3255US2024248298A1Apparatus and methods for heating tunability in processing chambersAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3355US2024248297A1Apparatus and methods for heating tunability in processing chambersAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3455US2024248282A1Apparatus and methods for heating tunability in processing chambersAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3554US2024234175A9Heat source arrangements, processing chambers, and related methods to facilitate deposition process adjustabilityAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3654US2024088222A1Uniform epitaxial growth over crystalline templateAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3752US11948796B2Selective methods for fabricating devices and structuresAPPLIED MATERIALS INC·Filed 2020·Granted Apr 2, 2024·0 cites·20 claims
- 3852US2025308857A1Plasma generation and uv diode configurations for processing chambers, and related apparatus and methodsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3951US2020283896A1Methods for low temperature silicide formationAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 4050US8652945B2Epitaxy of high tensile silicon alloy for tensile strain applicationsYE ZHIYUAN·Filed 2011·Granted Feb 18, 2014·0 cites·16 claims
- 4149US9012328B2Carbon addition for low resistivity in situ doped silicon epitaxyYE ZHIYUAN·Filed 2011·Granted Apr 21, 2015·0 cites·15 claims
- 4246US2011277934A1Methods of selectively depositing an epitaxial layerYE ZHIYUAN·Filed 2011·Application pending·0 cites
- 4345US2022375751A1Integrated epitaxy and preclean systemAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 4445US2015221730A1Carbon addition for low resistivity in situ doped silicon epitaxyAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 4544US2022319844A1Anisotropic epitaxial growthAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 4640US10446392B2Self-aligned nanodots for 3D NAND flash memoryAPPLIED MATERIALS INC·Filed 2018·Granted Oct 15, 2019·0 cites·1 claims
- 4739US11636490B2System, method, and computer program product for linking accounts across systemsVISA INT SERVICE ASS·Filed 2020·Granted Apr 25, 2023·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →