Apparatus for manufacturing semiconductor devices

Abstract

The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a pumping device; a vacuum chamber connected to the pumping device; and an optical system configured to determine the position of alignment marks on the surfaces of the semiconductor wafers to be bonded in the bonding module. The apparatus also includes a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure.

What is claimed is: 
     
         1 . A bonding module for bonding semiconductor wafers, comprising:
 a pumping device;   a vacuum chamber connected to the pumping device; and   an optical system configured to determine the position of alignment marks on the surfaces of the semiconductor wafers to be bonded in the bonding module.   
     
     
         2 . The bonding module according to  claim 1 , further comprising at least a first moveable bonding chuck configured to hold a first wafer and a second moveable bonding chuck different from the first bonding chuck and configured to hold a second wafer different from the first wafer. 
     
     
         3 . The bonding module according to  claim 2 , wherein the first and second bonding chucks are configured to hold the first and second wafers, respectively, in a vertical position within less than 10° with respect to a vertical plane. 
     
     
         4 . The bonding module according to  claim 2 , wherein either the first bonding chuck or the second bonding chuck, or both, have a bow that is either below 1 micron or below 0.1 micron. 
     
     
         5 . The bonding module according to  claim 2 , wherein either the first bonding chuck or the second bonding chuck, or both, comprise metal or a ceramic that resists bending and bowing. 
     
     
         6 . The bonding module according to  claim 2 , further comprising a control unit configured to control the first and the second bonding chucks to move to each other to locate the first and the second wafers at a predetermined distance to each other, release the first and the second wafers at the predetermined distance and to initiate local application of a force to at least one of the first and the second wafers such that they locally become that close to each other that bonding is initiated. 
     
     
         7 . The bonding module according to  claim 2 , further comprising a control unit configured to control the first and the second bonding chucks to move to each other to locate the first and the second wafers at a predetermined distance to each other and, subsequently, locally decreasing the clamping force applied by one of the first or second bonding chucks in order to hold the first or second wafer, respectively, such that the first and the second wafers become sufficiently close to each other so that bonding is initiated. 
     
     
         8 . The bonding module according to  claim 7 , wherein the control unit is configured to control gradual or non-gradual release of the first or second wafer. 
     
     
         9 . The bonding module according to  claim 6 , wherein the control unit is configured to compute the displacement of the first and the second bonding chucks in order to align the first and the second wafers. 
     
     
         10 . An apparatus for the manufacture of semiconductor devices, comprising:
 the bonding module according to  claim 1 ; and   a loadlock module connected to the bonding module and configured and dimensioned for wafer transfer to the bonding module.   
     
     
         11 . An apparatus for the manufacture of semiconductor devices, comprising:
 a bonding module comprising a vacuum chamber to provide bonding of wafers under a pressure below atmospheric pressure; and   a loadlock module connected to the bonding module and configured and dimensioned for wafer transfer to the bonding module and also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure.   
     
     
         12 . The apparatus according to  claim 11 , further comprising a second vacuum pumping device connected via a control valve to the vacuum chamber of the bonding module and configured to reduce the pressure in the vacuum chamber of the bonding module to below atmospheric pressure. 
     
     
         13 . The apparatus according to  claim 11 , wherein the loadlock module comprises a first gate that can be opened and closed for receipt of a wafer from an external environment and a second gate that can be opened and closed for transfer of a wafer from the loadlock module to the bonding module. 
     
     
         14 . The apparatus according to  claim 11 , wherein the loadlock module comprises a multi wafer storage system for storing multiple wafers to be transferred to the bonding module. 
     
     
         15 . The apparatus according to  claim 11 , further comprising at least one additional loadlock module connected to the bonding module and configured and dimensioned to receive one or more bonded wafers from the bonding module. 
     
     
         16 . The apparatus according to  claim 11 , wherein the bonding module comprises at least a first moveable bonding chuck configured and dimensioned to hold a first wafer and a second moveable bonding chuck different from the first bonding chuck and configured and dimensioned to hold a second wafer different from the first wafer. 
     
     
         17 . The apparatus according to  claim 16 , wherein the first and second bonding chucks are configured to hold the first and the second wafer, respectively, in a vertical position within less than  10 ° with respect to a horizontal plane. 
     
     
         18 . The apparatus according to  claim 16 , wherein either the first bonding chuck or the second bonding chuck, or both, comprise metal or a ceramic that resists bending and bowing. 
     
     
         19 . The apparatus according to  claim 16 , wherein the first bonding chuck and second bonding chuck are configured and dimensioned to hold first and second wafers that are at least 300 mm in diameter. 
     
     
         20 . The apparatus according to  claim 16 , further comprising a control unit configured to control the first and the second bonding chucks to move to each other to locate the first and the second wafers at a predetermined distance to each other, release the first and the second wafers at the predetermined distance and to initiate local application of a force to at least one of the first and the second wafers such that they locally become that close to each other that bonding is initiated. 
     
     
         21 . The apparatus according to  claim 16 , further comprising a control unit configured to control the first and the second bonding chucks to move to each other to locate the first and the second wafers at a predetermined distance to each other and, subsequently, locally decreasing the clamping force applied by one of the first or second bonding chucks in order to hold the first or second wafer, respectively, such that the first and the second wafers become sufficiently close to each other so that bonding is initiated. 
     
     
         22 . The apparatus according to  claim 21 , wherein the control unit is configured to control gradual or non-gradual release of the first or second wafer.