Methods to improve the in-film defectivity of pecvd amorphous carbon films

Abstract

An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

1 . An article for use in a semiconductor processing chamber, the article comprising:
 a showerhead, a support assembly, or a vacuum chamber body having an aluminum surface; and   a coating material comprising a nitrogen containing amorphous carbon layer applied on the aluminum surface in a plasma enhanced chemical vapor deposition process.   
     
     
         2 . The article of  claim 1 , wherein the nitrogen containing amorphous carbon layer has a thickness between about 500 Å and about 3000 Å. 
     
     
         3 . The article of  claim 1 , wherein the coating has a thickness between about 500 Å and about 3000 Å. 
     
     
         4 . The article of  claim 1 , wherein the coating promotes adhesion of carbon to the article. 
     
     
         5 . The article of  claim 1 , wherein the coating has a thickness between about 500 Å and about 3000 Å, and a surface roughness between about 30 nm and about 50 nm. 
     
     
         6 . The article of  claim 1 , wherein the nitrogen containing amorphous carbon layer is formed by placing the article in a processing chamber, providing a gas mixture comprising a carbon source and a nitrogen source to the chamber, and forming a plasma in the chamber. 
     
     
         7 . The article of  claim 6 , wherein the gas mixture further comprises an inert gas. 
     
     
         8 . The article of  claim 6 , wherein the carbon source is a hydrocarbon. 
     
     
         9 . The article of  claim 6 , wherein the carbon source has a general formula C x H y , where x is between 2 and 10, and y is between 2 and 22. 
     
     
         10 . The article of  claim 6 , wherein the carbon source is selected from the group consisting of propylene, propyne, propane, butane, butylene, butadiene, acetylene, pentane, pentene, pentadiene, cyclopentane, cyclopentadiene, benzene, toluene, alpha terpinene, phenol, cymene, norbornadiene, and combinations thereof. 
     
     
         11 . The article of  claim 6 , wherein the carbon source is propylene and the nitrogen source is nitrogen gas. 
     
     
         12 . A semiconductor processing chamber, comprising:
 a chamber body;   a showerhead; and   a substrate support assembly, wherein at least one of the chamber body, the showerhead, and the substrate support assembly has an aluminum surface and a coating comprising a nitrogen containing amorphous carbon layer applied to the aluminum surface in a plasma enhanced chemical vapor deposition process.   
     
     
         13 . The semiconductor processing chamber of  claim 12 , wherein the coating has a thickness between about 500 Å and about 3000 Å, and a surface roughness between about 30 nm and about 50 nm.