Methods and Systems for Lithography Alignment

Abstract

Methods and systems for lithographically exposing a substrate based on a curvature profile of the substrate.

1 - 8 . (canceled) 
     
     
         9 . A system for processing a substrate, comprising:
 means for determining a curvature profile of the substrate; and   means for lithographically exposing portions of the substrate based on the curvature profile.   
     
     
         10 . The system of  claim 9  further comprising means for subjecting the substrate to a heat treatment process before determining the curvature profile of the substrate. 
     
     
         11 . The system of  claim 10  wherein the heat treatment process comprises at least one of a rapid thermal anneal (RTA) process and a flash anneal process. 
     
     
         12 . The system of  claim 10  wherein the heat treatment process comprises a rapid thermal anneal (RTA) process and a flash anneal process. 
     
     
         13 . A scanner system, comprising:
 a reticle stage configured to retain a reticle;   a wafer stage configured to retain a wafer;   a projection unit interposing the reticle stage and the wafer stage; and   an illumination source configured to emit light through the reticle and the projection unit and onto the wafer;   wherein at least one of the reticle stage and the wafer stage is configured to be positionally adjusted to account for a curvature profile of the wafer.   
     
     
         14 . The scanner system of  claim 13  further comprising a wafer curvature profiler configured to determine the curvature profile of the wafer. 
     
     
         15 . The scanner system of  claim 14  further comprising a conveyor configured to transport the wafer from the wafer curvature profiler to the wafer stage. 
     
     
         16 . The scanner system of  claim 15  wherein the wafer curvature profiler is remotely located from the wafer stage. 
     
     
         17 . A system comprising:
 a reticle stage configured to support a reticle;   a wafer stage configured to support a wafer;   an illumination source configured to emit light through the reticle and onto the wafer; and   a curvature profile module operable to determine a curvature profile of the wafer prior to the illumination source emitting light through the reticle and onto the wafer.   
     
     
         18 . The system of  claim 17 , further comprising a controller operable to receive the determined curvature profile of the wafer and to control movement of at least one the reticle stage and the wafer stage to account for the determined curvature profile of the wafer. 
     
     
         19 . The system of  claim 18 , wherein the controller is operable to control movement of both the reticle stage and the wafer stage to account for the determined curvature profile of the wafer. 
     
     
         20 . The system of  claim 17 , further comprising a fluid supply unit operable to supply a fluid adjacent the wafer stage. 
     
     
         21 . The system of  claim 17 , wherein the curvature profile module includes a metrology tool operable to determine the curvature profile of the wafer. 
     
     
         22 . The system of  claim 17 , further comprising a conveyor operable to transport the wafer from the wafer curvature module to the wafer stage after determining the curvature profile of the wafer. 
     
     
         23 . The system of  claim 17 , further comprising a projection unit interposing the reticle stage and the wafer stage. 
     
     
         24 . The system of  claim 23 , wherein the determined curvature profile of the wafer correlates to an alignment mark shift for an alignment mark on the wafer, the alignment mark shift representing a positional change of the alignment mark from a first position to a second position on the wafer as a result of applying a process to the wafer. 
     
     
         25 . The system of  claim 24 , wherein the process includes a heat treatment process. 
     
     
         26 . The system of  claim 17 , wherein the curvature profile module is operable to determine the curvature profile of the entire wafer. 
     
     
         27 . The system of  claim 17 , wherein the curvature profile module is operable to determining the curvature profile of the wafer locally at a plurality of different portions of the wafer. 
     
     
         28 . The system of  claim 17 , wherein the curvature profile module is operable to determine the curvature profile of the wafer while the wafer is supported by the wafer stage.