Wafer level chip scale package having an enhanced heat exchange efficiency with an emf shield and a method for fabricating the same

Abstract

A wafer level chip scale package having an enhanced heat exchange efficiency with an EMF shield is presented. The wafer level chip scale package includes a semiconductor chip, an insulation layer, and a metal plate. The semiconductor chip has a plurality of bonding pads on an upper face thereof. The insulation layer is disposed over the upper face of the semiconductor chip and has openings that expose some portions of the bonding pads. The metal plate covers an upper face of the insulation layer and side faces of the semiconductor chip in which the metal plate is electrically insulated from the bonding pads.

What is claimed is: 
     
         1 . A method for fabricating a wafer level chip scale package, comprising the steps of:
 forming through holes passing through an upper face of a semiconductor chip and through a lower face opposite to the upper face, wherein the upper surface of the semiconductor chip is formed with bonding pads electrically connected to a circuit unit;   to forming a metal seed layer over an inner surface of the semiconductor chip formed by the through holes and the upper face of the semiconductor chip;   forming mask patterns having a band shape over the metal seed layer along a periphery of the redistribution regions respectively connecting the through hole and the bonding pad corresponding to the through hole;   forming through electrodes inside the through holes exposed by using the mask patterns, forming redistribution units within each redistribution region and forming a dummy conductive pattern outside of each mask pattern;   removing the mask patterns from the metal seed layer; and   removing the metal seed layer formed at a position corresponding to the mask pattern from the upper face of the semiconductor chip.   
     
     
         2 . The method according to  claim 1 , wherein the step of forming the mask patterns over the metal seed layer includes the steps of:
 forming a photoresist film over the metal seed layer; and   patterning the photoresist film by exposing and developing the photoresist film.   
     
     
         3 . The method according to  claim 1 , wherein the step of forming the mask patterns over the metal seed layer includes the steps of:
 providing flowable mask material over the metal seed layer in shape of a band; and   curing the flowable mask material.