US2013251918A1PendingUtilityA1

Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition

65
Assignee: ADVANCED TECH MATERIALSPriority: Aug 8, 2007Filed: May 13, 2013Published: Sep 26, 2013
Est. expiryAug 8, 2027(~1 yrs left)· nominal 20-yr term from priority
Inventors:Thomas M. CameronChongying Xu
C23C 16/45553C07F 17/00C23C 16/40
65
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Claims

Abstract

Cyclopentadienyl and indenyl barium/strontium metal precursors and Lewis base adducts thereof are described. Such precursors have utility for forming Ba- and/or Sr-containing films on substrates, in the manufacture of microelectronic devices or structures.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of depositing a strontium ruthenium oxide film on a substrate, comprising carrying out an atomic layer deposition (ALD) process with strontium and ruthenium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium. 
     
     
         2 . The method of  claim 1 , wherein the precursor is dissolved in a solvent medium. 
     
     
         3 . The method of  claim 2 , wherein the solvent in the solvent medium is a single-component solvent or a multicomponent solvent mixture. 
     
     
         4 . The method of  claim 2 , wherein the solvent medium is selected from the group consisting of C 3 -C 12  alkanes, C 2 -C 12  ethers, C 6 -C 12  aromatics, C 7 -C 16  arylalkanes, C 10 -C 25  arylcyloalkanes, and further alkyl-substituted forms of the aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C 1 -C 8  alkyl. 
     
     
         5 . The method of  claim 2 , wherein the solvent medium is selected from the group consisting of xylene, 1,4-tertbutyltoluene, 1,3-diisopropylbenzene, tetralin and dimethyltetralin. 
     
     
         6 . The method of  claim 1 , wherein the strontium precursor is in liquid form and is vaporized for vapor delivery in the atomic layer deposition process. 
     
     
         7 . The method of  claim 1 , wherein the method is conducted in the presence of an oxidant. 
     
     
         8 . The method of  claim 7 , wherein the oxidant is nitrous oxide, oxygen, ozone, water, alcohols, or combinations of two or more compatible oxidant species selected therefrom. 
     
     
         9 . The method of  claim 7 , wherein the oxidant is oxygen, oxygen plasma, ozone or nitrous oxide. 
     
     
         10 . The method of  claim 7 , wherein the oxidant is nitrous oxide. 
     
     
         11 . A method of depositing a film comprising strontium and ruthenium on a substrate, comprising carrying out an atomic layer deposition (ALD) process with strontium and ruthenium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium. 
     
     
         12 . The method of  claim 11 , wherein the precursor is dissolved in a solvent medium. 
     
     
         13 . The method of  claim 12 , wherein the solvent in the solvent medium is a single-component solvent or a multicomponent solvent mixture. 
     
     
         14 . The method of  claim 12 , wherein the solvent medium is selected from the group consisting of C 3 -C 12  alkanes, C 2 -C 12  ethers, C 6 -C 12  aromatics, C 7 -C 16  arylalkanes, C 10 -C 25  arylcyloalkanes, and further alkyl-substituted forms of the aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C 1 -C 8  alkyl. 
     
     
         15 . The method of  claim 12 , wherein the solvent medium is selected from the group consisting of xylene, 1,4-tertbutyltoluene, 1,3-diisopropylbenzene, tetralin and dimethyltetralin. 
     
     
         16 . The method of  claim 11 , wherein the strontium precursor is in liquid form and is vaporized for vapor delivery in the atomic layer deposition process. 
     
     
         17 . The method of  claim 11 , wherein the method is conducted in the presence of an oxidant. 
     
     
         18 . The method of  claim 17 , wherein the oxidant is nitrous oxide, oxygen, ozone, water, alcohols, or combinations of two or more compatible oxidant species selected therefrom. 
     
     
         19 . The method of  claim 17 , wherein the oxidant is oxygen, oxygen plasma, ozone or nitrous oxide. 
     
     
         20 . The method of  claim 17 , wherein the oxidant is nitrous oxide.

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