Heat Sink Package

Abstract

Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.

What is claimed is: 
     
         1 . A heat sink package comprising:
 a heat sink having a cavity on an upper surface thereof:   a metal layer formed on the bottom surface of the cavity;   a solder paste layer formed on the metal layer; and   a semiconductor package on the solder paste layer.   
     
     
         2 . The heat sink package of  claim 1 , wherein the heat sink comprises aluminum and the metal layer comprises copper. 
     
     
         3 . The heat sink package of  claim 1 , wherein the semiconductor package comprises: a substrate; a lead and a semiconductor chip on the substrate and a molding member sealing the semiconductor chip on the substrate. 
     
     
         4 . The heat sink package of  claim 1 , wherein the substrate is selected from the group consisting of a direct bonded copper (OBC) substrate, a thick or thin film copper (TFC) substrate and a direct fired copper (OFC) substrate. 
     
     
         5 . The heat sink package of  claim 1 , wherein the lead extends from the substrate toward the outside of the molding member. 
     
     
         6 . A heat sink package comprising:
 a heat sink;   a metal layer formed on the heat sink;   a solder paste layer formed on the metal layer; and   a semiconductor package on the solder paste layer.   
     
     
         7 . The heat sink package of  claim 6 , wherein a groove is formed on the upper surface of the heat sink around the solder paste layer in order to prevent overflow of the solder paste layer. 
     
     
         8 . The heat sink package of  claim 6 , wherein the semiconductor package comprises:
 a substrate; a lead and a semiconductor chip on the substrate and a molding member sealing the semiconductor chip on the substrate.   
     
     
         9 . The heat sink package of  claim 8 , wherein the substrate is selected from the group consisting of a direct bonded copper (DBC) substrate, a thick or thin film copper (TFC) substrate and a direct fired copper (DFC) substrate. 
     
     
         10 . The heat sink package of  claim 8 , wherein the lead extends from the substrate outside of the molding member.