Multi-Region Processing System and Heads

Abstract

The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

What is claimed: 
     
         1 . A reaction chamber comprising:
 a substrate support for supporting a substrate during processing; and   a process head for supplying one or more materials for depositing onto a surface of the substrate during processing,
 the process head comprising a sidewall, an outer shield, and a process head assembly, 
 wherein the sidewall encloses the process head assembly and defines a process region above the surface of the substrate during processing, 
 wherein the outer shield surrounds the sidewall and defines an outer region between the sidewalls and the outer shield and above the surface of the substrate during processing, 
 wherein the outer region is coupled to one of a vacuum source or an inert gas source, 
 wherein the process head assembly comprises one of a showerhead, a target, or a cold plasma head, and 
 wherein the process head is movable with respect to the substrate support at least within a plane parallel to the surface of the substrate. 
   
     
     
         2 . The reaction chamber of  claim 1 , wherein the process head is movable with respect to the substrate support in two directions within the plane parallel to the surface of the substrate. 
     
     
         3 . The reaction chamber of  claim 2 , wherein the process head is movable with respect to the substrate support in a direction perpendicular to the surface of the substrate. 
     
     
         4 . The reaction chamber of  claim 1 , wherein the outer shield is movable relative to the sidewall in a direction perpendicular to the surface of the substrate. 
     
     
         5 . The reaction chamber of  claim 1 , wherein the process head assembly to the sidewall in a direction perpendicular to the surface of the substrate thereby changing a volume of the process region. 
     
     
         6 . The reaction chamber of  claim 1 , further comprising bellows connected to the process head and a wall of the reaction chamber, wherein the bellows provides sealing while the process head moves relative to the wall of the reaction chamber. 
     
     
         7 . The reaction chamber of  claim 1 , further comprising one or more flexible delivery lines connection to the process head and configured to deliver or remove one or more of a process gas and an inert gas to the process head. 
     
     
         8 . The reaction chamber of  claim 1 , further comprising a power source connected to the process hear, the power source is one of a radio frequency power source, a direct current pulse power source, or a microwave power source. 
     
     
         9 . The reaction chamber of  claim 1 , wherein the process head is sealed within the sidewall to isolate the process region. 
     
     
         10 . The reaction chamber of  claim 1 , wherein the process head is movable with respect to the sidewall while the process head is kept sealed within the sidewall. 
     
     
         11 . The reaction chamber of  claim 1 , wherein the sidewall comprises a gas delivery line for delivering the process gas into the process region. 
     
     
         12 . The reaction chamber of  claim 1 , wherein the outer shield is electrically floating or grounded. 
     
     
         13 . The reaction chamber of  claim 1 , wherein the outer shield is configured to forma seal with the surface of the substrate. 
     
     
         14 . The reaction chamber of  claim 1 , further comprising an outer ring surrounding the outer shield and forming an annular space between the outer ring and the outer shield. 
     
     
         15 . The reaction chamber of  claim 14 , wherein the annular space is coupled to the inert gas source and wherein the outer region is coupled to the vacuum source. 
     
     
         16 . The reaction chamber of  claim 1 , wherein the outer shield extends further toward the substrate support that the sidewall. 
     
     
         17 . The reaction chamber of  claim 1 , wherein the process head assembly comprises the showerhead. 
     
     
         18 . The reaction chamber of  claim 1 , wherein the process head assembly comprises the target. 
     
     
         19 . The reaction chamber of  claim 1 , wherein the process head assembly comprises the cold plasma head. 
     
     
         20 . The reaction chamber of  claim 1 , further comprising a controller for controlling position of the process head relative to the substrate support.