Combinatorial Process System

Abstract

A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

What is claimed is: 
     
         1 . A method for processing a substrate, the method comprising:
 positioning a substrate on a substrate support;   positioning at least one process head above the substrate support;   positioning a base plate between the substrate and the at least one process head, wherein the base plate has a fixed opening to expose a portion of the substrate to the at least one process head;   moving a moveable plate having a fixed aperture therein relative to the base plate to expose a portion of the fixed opening to the at least one process head;   performing a first process on a first isolated region on the substrate through the fixed opening and the fixed aperture with the at least one process head;   after the processing of the first isolated region, moving at least one of the base plate or the moveable plate relative to the substrate; and   performing a second process on a second isolated region on the substrate through the fixed opening and the fixed aperture with the at least one process head.   
     
     
         2 . The method of  claim 1 , wherein the moveable plate is slidably located within a recess of the base plate. 
     
     
         3 . The method of  claim 1 , wherein the moving of the at least one of the base plate or the moveable plate relative to the substrate comprises at least one of rotating the substrate, rotating the base plate, sliding the moveable plate, or a combination thereof. 
     
     
         4 . The method of  claim 1 , wherein each of the performing of the first process and the performing of the second process comprises generating a plasma above the substrate. 
     
     
         5 . The method of  claim 4 , wherein each of the performing of the first process and the performing of the second process further comprises confining the plasma with walls extending from the base plate. 
     
     
         6 . The method of  claim 1 , wherein the second process is different than the first process. 
     
     
         7 . The method of  claim 6 , wherein the second process differs from the first process in at least one of materials, process conditions, process sequences, or a combination thereof. 
     
     
         8 . The method of  claim 1 , wherein the at least one process head comprises a plurality of process heads, wherein each of the plurality of process heads is operable to deposit material onto the substrate. 
     
     
         9 . The method of  claim 1 , wherein at least one of the first process or the second process modifies the respective isolated region on the substrate without depositing material onto the substrate. 
     
     
         10 . The method of  claim 1 , wherein at least one of the first process or the second process comprises performing reactive ion etching or implantation on the respective isolated region on the substrate. 
     
     
         11 . A method for processing a substrate, the method comprising:
 positioning a substrate on a substrate support;   positioning a plurality of process heads above the substrate support;   positioning a base plate between the substrate and the plurality of process heads, wherein the base plate has a fixed opening to expose a portion of the substrate to the plurality of process heads;   moving a moveable plate having a fixed aperture therein relative to the base plate to expose a portion of the fixed opening to the plurality of process heads;   performing a first process on a first isolated region on the substrate through the fixed opening and the fixed aperture with the plurality of process heads;   after the processing of the first isolated region, moving at least one of the base plate or the moveable plate relative to the substrate; and   performing a second process on a second isolated region on the substrate through the fixed opening and the fixed aperture with the plurality of process heads, wherein the second process is different than the first process.   
     
     
         12 . The method of  claim 11 , wherein the moving of the at least one of the base plate or the moveable plate relative to the substrate comprises at least one of rotating the substrate, rotating the base plate, sliding the moveable plate, or a combination thereof. 
     
     
         13 . The method of  claim 12 , wherein the moveable plate is slidably located within a recess of the base plate. 
     
     
         14 . The method of  claim 13 , wherein the second process differs from the first process in at least one of materials, process conditions, process sequences, or a combination thereof. 
     
     
         15 . The method of  claim 14 , wherein the moveable plate has a plurality of fixed apertures.