Lithography Mask Repairing Process

Abstract

A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

What is claimed is: 
     
         1 . An apparatus configured to perform a repair process on a photolithography mask, the apparatus comprising:
 a beam generator configured to generate a beam and project the beam on the photolithography mask;   a radiation source configured to generate a radiation and project the radiation on the photolithography mask; and   a process gas source configured to release a process gas onto the photolithography mask.   
     
     
         2 . The apparatus of  claim 1  further comprising:
 a vacuum process chamber, wherein a projection head of the beam generator and the radiation source are disposed in the vacuum process chamber, and wherein an inlet of the process chamber is connected to the process gas source. 
 
     
     
         3 . The apparatus of  claim 1  further comprising a process gas stored in the process gas source, wherein the process gas is configured to react with a surface portion of the photolithography mask when stimulated by the beam. 
     
     
         4 . The apparatus of  claim 3 , wherein the process gas comprises Xeon di-fluoride (XeF 2 ). 
     
     
         5 . The apparatus of  claim 3 , wherein the radiation source is configured to generate the radiation having a quantum energy greater than a bond energy of the process gas. 
     
     
         6 . The apparatus of  claim 1 , wherein the radiation source is configured to project the radiation on an entirety of the photolithography mask simultaneously. 
     
     
         7 . The apparatus of  claim 1 , wherein the beam generator is configured to generate and project an electron beam. 
     
     
         8 . The apparatus of  claim 1 , wherein the beam generator is configured to generate and project an ion beam. 
     
     
         9 . An apparatus configured to perform a repair process on a photolithography mask using a process gas, the apparatus comprising:
 a vacuum process chamber;   a process gas source configured to store the process gas;   an inlet in the vacuum process chamber, wherein the inlet is connected to the process gas source; and   a radiation source configured to generate a radiation having a quantum energy greater than a bond energy of the process gas, and project the radiation on the photolithography mask.   
     
     
         10 . The apparatus of  claim 9 , wherein the radiation source is configured to project the radiation on an entirety of the photolithography mask simultaneously. 
     
     
         11 . The apparatus of  claim 9  further comprising a beam generator configured to generate and project a beam on the photolithography mask. 
     
     
         12 . The apparatus of  claim 11 , wherein the beam generator is configured to generate and project an electron beam. 
     
     
         13 . The apparatus of  claim 11 , wherein the beam generator is configured to generate and project an ion beam. 
     
     
         14 . The apparatus of  claim 11 , wherein the beam generator is configured to scan selected portions of the photolithography mask. 
     
     
         15 . An apparatus configured to perform a repair process on a photolithography mask, the apparatus comprising:
 a vacuum process chamber;   a beam generator in the vacuum process chamber and configured to generate and scan a beam on the photolithography mask;   a radiation source in the vacuum chamber and configured to generate a radiation to project on the photolithography mask;   a process gas tank; and   an inlet in the vacuum process chamber, wherein the inlet is connected to the process gas tank.   
     
     
         16 . The apparatus of  claim 15 , wherein the beam generator is configured to generate and project an electron beam. 
     
     
         17 . The apparatus of  claim 15 , wherein the beam generator is configured to generate and project an ion beam. 
     
     
         18 . The apparatus of  claim 17 , wherein the beam generator is configured to generate and project a Ga +  beam. 
     
     
         19 . The apparatus of  claim 15 , wherein the beam generator is configured to scan selected portions of the photolithography mask with the beam, and the radiation source is configured to project the radiation on an entirety of the photolithography mask. 
     
     
         20 . The apparatus of  claim 15 , wherein the radiation source is configured to generate a light with a frequency no lower than frequencies of Ultra-Violet (UV) lights.