Arrangement and method for manufacturing the same

Abstract

An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

What is claimed is: 
     
         1 . An arrangement comprising:
 a substrate having a front side and a back side;   a die region within the substrate;   a multi-purpose layer defining a back side of the die region; and   an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;   wherein the multi-purpose layer is formed of an ohmic material; and   wherein the etch stop layer is of a first conductivity type of a first doping concentration.   
     
     
         2 . The arrangement of  claim 1 ,
 wherein the ohmic material is of a second conductivity type of a second doping concentration.   
     
     
         3 . The arrangement of  claim 2 ,
 wherein the second conductivity type is the same as the first conductivity type.   
     
     
         4 . The arrangement of  claim 3 ,
 wherein the second doping concentration is higher than the first doping concentration.   
     
     
         5 . The arrangement of  claim 4 ,
 wherein the ohmic material is a degenerate semiconductor material.   
     
     
         6 . The arrangement of  claim 1 ,
 wherein a portion of the substrate is disposed over the etch stop layer.   
     
     
         7 . The arrangement of  claim 6 ,
 wherein the etch stop layer functions as an etch stop relative to said portion of the substrate.   
     
     
         8 . The arrangement of  claim 6 ,
 wherein said portion is of a third conductivity type.   
     
     
         9 . The arrangement of  claim 8 ,
 wherein the third conductivity type is a p-type.   
     
     
         10 . The arrangement of  claim 1 ,
 wherein the first conductivity type is an n-type.   
     
     
         11 . The arrangement of  claim 1 ,
 wherein the etch stop layer is a silicon-on-insulator (SOI) structure.   
     
     
         12 . The arrangement of  claim 1 ,
 wherein the multi-purpose layer is formed by implantation.   
     
     
         13 . The arrangement of  claim 1 ,
 wherein the multi-purpose layer comprises at least one highly doped epitaxial layer.   
     
     
         14 . The arrangement of  claim 1 ,
 wherein the multi-purpose layer and the etch stop layer form a double peak distribution.   
     
     
         15 . A method for forming a die in a substrate, comprising:
 providing a substrate having a front side and a back side, the front side defining a die region within the substrate;   forming a multi-purpose layer defining a back side of the die region; and   forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;   wherein the multi-purpose layer is formed of an ohmic material; and   wherein the etch stop layer is of a first conductivity type of a first doping concentration.   
     
     
         16 . The method of  claim 15 , further comprising:
 mechanically thinning the substrate from the back side thereof.   
     
     
         17 . The method of  claim 15 , further comprising:
 mechanically thinning the substrate from the back side thereof to the etch stop layer.   
     
     
         18 . The method of  claim 15 , further comprising:
 etching the substrate from the back side thereof using the etch stop layer as an etch stop.   
     
     
         19 . The method of  claim 15 , further comprising:
 etching selectively at least a portion of the etch stop layer using the multi-purpose layer as an etch stop.   
     
     
         20 . The method of  claim 19 , further comprising:
 wherein discrete contacts formed of ohmic material remain following etching selectively at least a portion of the multi-purpose layer.   
     
     
         21 . The method of  claim 15 , further comprising:
 forming the multi-purpose layer and the etch stop layer as a double peak distribution.   
     
     
         22 . An arrangement, comprising:
 a substrate having a front side and a back side;   a die region within the substrate;   a multi-purpose layer defining a back side of the die region; and   an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;   an encapsulation material disposed at least over the first side of the substrate;   wherein the multi-purpose layer is formed of an ohmic material; and   wherein the etch stop layer is of a first conductivity type of a first doping concentration.   
     
     
         23 . A method for manufacturing an arrangement, the method comprising:
 forming a die region in a substrate having a front side and a back side;   forming a multi-purpose layer defining a back side of the die region;   forming an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate;   forming at least one back side terminal from the multi-purpose layer;   forming at least one front side terminal on the front side of the substrate; and   forming encapsulation material over the front side of the substrate covering die region;   wherein the multi-purpose layer is formed of an ohmic material; and   wherein the etch stop layer is of a first conductivity type of a first doping concentration