Semiconductor device

Abstract

A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a carrier;   a semiconductor chip attached to the carrier;   a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier;   a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier; and   wherein the first thickness is smaller than the second thickness.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising:
 an insulating support layer on which the first conducting line is deposited.   
     
     
         3 . The semiconductor device of  claim 2 , comprising wherein the second conducting line is deposited on the insulating support layer. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising:
 an insulating barrier layer which covers the first conducting line and which leaves the second conducting line uncovered.   
     
     
         5 . The semiconductor device of  claim 4 , further comprising:
 a third conducting line deposited over the insulating barrier layer.   
     
     
         6 . The semiconductor device of  claim 1 , comprising wherein the carrier is made of metal. 
     
     
         7 . The semiconductor device of  claim 1 , comprising wherein the carrier is of a TSLP type. 
     
     
         8 . The semiconductor device of  claim 1 , comprising wherein the carrier is made of an insulating material. 
     
     
         9 . The semiconductor device of  claim 1 , further comprising:
 a mold material encapsulating the semiconductor chip and the first and second conducting lines.   
     
     
         10 . A method of manufacturing a semiconductor device, comprising:
 providing a carrier;   attaching a semiconductor chip to the carrier;   depositing one or more conductive materials over the semiconductor chip and the carrier to form a first conducting line and a base part of a second conducting line;   applying an insulating barrier layer over the first conducting line, thereby leaving the base part of the second conducting line uncovered; and   depositing a conductive material over the uncovered base part of the second conducting line to form the second conducting line.   
     
     
         11 . The method of  claim 10 , wherein the insulating barrier layer is applied in a structured manner. 
     
     
         12 . The method of  claim 11 , comprising applying the insulating barrier layer by printing or dispensing a liquid polymer over the first conducting line. 
     
     
         13 . The method of  claim 10 , comprising applying the insulating barrier layer by depositing an unstructured layer of insulating material and by structuring the unstructured layer of insulating material. 
     
     
         14 . The method of  claim 13 , comprising applying the unstructured layer of insulating material by dispensing or spin-coating or spray-coating or lamination. 
     
     
         15 . The method of  claim 13 , comprising structuring the unstructured layer of insulating material by lithographic processes or by laser ablation. 
     
     
         16 . The method of  claim 10 , comprising depositing the one or more conductive materials over the semiconductor chip in a structured manner. 
     
     
         17 . The method of  claim 16 , comprising depositing the one or more conductive materials to form the first conducting line and a base part of a second conducting line by printing. 
     
     
         18 . The method of  claim 16 , wherein depositing the one or more conductive materials to form the first conducting line and a base part of a second conducting line comprises:
 applying a structured seed layer; and   growing the conductive material on the structured seed layer.   
     
     
         19 . The method of  claim 18 , comprising:
 depositing the one or more conductive materials to form the first conducting line and a base part of a second conducting line by electroless plating; and   depositing the conductive material to form the second conducting line over the base part of the second conducting line by a galvanic process.   
     
     
         20 . A semiconductor device comprising:
 a carrier made of metal;   a semiconductor chip attached to the carrier;   a first conducting line deposited over the semiconductor chip and the carrier;   an insulating layer applied over the first conducting line; and   a second conducting line deposited over the insulating layer.