Semiconductor device

Abstract

A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

1 . A semiconductor device comprising: 
       opposed first and second metal plates;
 a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; 
 a metal block interposed between the first metal plate and each of the semiconductor elements; 
 a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and 
 a resin molding sealing the semiconductor elements and the metal block between the first metal plate and the second metal plate, wherein 
 a face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding, and 
 the first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member. 
 
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the groove is an annular groove formed in substantially a rectangular shape.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein
 the plurality of semiconductor elements are two types of first and second semiconductor elements arranged side by side in a predetermined direction between the first metal plate and the second metal plate, and   a width of a first region on the first metal plate in a perpendicular direction perpendicular to the predetermined direction is substantially equal to a width of a second region on the first metal plate in the perpendicular direction, the solder member corresponding to the metal block at the first semiconductor element being provided in the first region, the solder member corresponding to the metal block at the second semiconductor element being provided in the second region.   
     
     
         4 . The semiconductor device according to  claim 3 , wherein
 a width of the first semiconductor element in the perpendicular direction is substantially equal to a width of the second semiconductor element in the perpendicular direction.   
     
     
         5 . The semiconductor device according to  claim 3 , wherein
 a width of a first portion of the metal block at the first semiconductor element in the perpendicular direction, at least the corresponding solder member being provided at the first portion, is substantially equal to a width of a second portion of the metal block at the second semiconductor element in the perpendicular direction, at least the corresponding solder member being provided at the second portion.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein
 a width of the first semiconductor element in the perpendicular direction is different from a width of the second semiconductor element in the perpendicular direction, and the shape of the metal block at the first semiconductor element is different from the shape of the metal block at the second semiconductor element.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein
 the shape of the metal block at the first semiconductor element is substantially a rectangular parallelepiped shape, and   the shape of the metal block at the second semiconductor element is a tapered shape in cross section.   
     
     
         8 . The semiconductor device according to  claim 3 , wherein
 a distance at which the first semiconductor element and the second semiconductor element are spaced apart from each other in the predetermined direction between the first metal plate and the second metal plate is at least larger than a width of the metal block in a lamination direction.   
     
     
         9 . The semiconductor device according to  claim 1 , wherein
 the plurality of semiconductor elements are a power transistor that constitutes an arm element of a power converter, and a reflux diode connected in parallel with the power transistor.