Electronic module and method of manufacturing the same

Abstract

An electronic module is provided, which comprises a first carrier; an electronic chip comprising at least one electronic component and arranged on the first carrier; a spacing element comprising a surface arranged on the electronic chip and being in thermal conductive connection with the at least one electronic component; a second carrier arranged on the spacing element; and a mold compound enclosing the electronic chip and the spacing element at least partially; wherein the spacing element comprises a material having a CTE value being matched with at least one other CTE.

What is claimed is: 
     
         1 . An electronic module comprising:
 a first carrier;   an electronic chip comprising at least one electronic component and arranged on the first carrier,   a spacing element arranged on the electronic chip and being in thermal conductive connection with the at least one electronic component;   a second carrier arranged on the spacing element; and   a mold compound enclosing the electronic chip and the spacing element at least partially;   wherein the spacing element comprises a material having a coefficient of thermal expansion value being matched with at least one coefficient of thermal expansions selected out of the group of coefficients of thermal expansion consisting of:   a coefficient of thermal expansions of the first carrier;   a coefficient of thermal expansions of the second carrier; and   a coefficient of thermal expansions of the mold compound.   
     
     
         2 . The electronic module according to  claim 1 , wherein the matching is performed in such a way that mechanical stress in the electronic module due to temperature changes is minimized. 
     
     
         3 . The electronic module according to  claim 1 , wherein the matching is performed in such a way that values of coefficients of thermal expansion of the spacing element material and of the matched coefficient of thermal expansion is within a range of ±6 ppm/K. 
     
     
         4 . The electronic module according to  claim 1 , wherein the coefficient of thermal expansion of the spacing element material is in the range of 6 ppm/K and 16 ppm/K. 
     
     
         5 . The electronic module according to  claim 1 , wherein the spacing element material has an electrical conductivity above a predetermined threshold. 
     
     
         6 . The electronic module according to  claim 1 , wherein the spacing element material is a matrix compound. 
     
     
         7 . The electronic module according to  claim 6 , wherein the matrix compound comprises a metallic matrix material. 
     
     
         8 . The electronic module according to  claim 6 , wherein a reinforcement material of the matrix compound, is selected out of the group consisting of:
 SiC;   W; and   Mo.   
     
     
         9 . The electronic module according to  claim 1 , wherein the spacer element material is selected out of the group consisting of:
 AlSiC;   CuW; and   CuMo.   
     
     
         10 . The electronic module according to  claim 9 , wherein the spacer element material is selected out of the group consisting of:
 AlSiC comprising a SiC content between 25% and 80% by volume;   CuW comprising a W content between 20% and 85% by volume; and   CuMo comprising a Mo content between 30% and 90% by volume.   
     
     
         11 . A method of manufacturing an electronic module, the method comprising:
 providing a first carrier;   arranging an electronic chip comprising at least one electronic component on the carrier;   contacting a spacing element to the electronic chip;   contacting a second carrier to the spacing element;   molding a molding compound at least partially around the spacing element and the electronic chip,   wherein the spacing element comprises a material having a coefficient of thermal expansion value being matched with at least one coefficient of thermal expansions selected out of the group of coefficients of thermal expansion consisting of:   a coefficient of thermal expansions of the first carrier;   a coefficient of thermal expansions of the second carrier; and   a coefficient of thermal expansions of the mold compound.   
     
     
         12 . The method according to  claim 11 , wherein the contacting of the spacing element comprising a soldering step. 
     
     
         13 . The method according to  claim 11 , wherein the contacting of the second carrier comprising a soldering step. 
     
     
         14 . The method according to  claim 11 , further comprising:
 selecting the spacing element material taking into account the coefficient of thermal expansion of the spacing element material.   
     
     
         15 . The method according to  claim 14 , wherein the selecting further takes into account a coefficient of thermal expansion of the a coefficient of thermal expansions of the first carrier; the coefficient of thermal expansions of the second carrier; the coefficient of thermal expansions of the electronic chip; and the coefficient of thermal expansions of the mold compound.