Multi-zone active-matrix temperature control system and temperature control method, and electrostatic chuck and plasma processing apparatus apply thereof

Abstract

The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate driver; the temperature control matrix comprising: N*M temperature control modules forming a N-row M-column matrix, a power supply line, and a power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; a semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate, which turn on or off, being connected with the power supply line, and with the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line, of the semiconductor switches of the temperature control modules at a same row or a same column are serially connected, and connected with the power supply line. The present invention may precisely perform temperature control to each zone of the electrostatic chuck and significantly reduces the number of electrostatic chuck lead-out lines.

1 . A multi-zone active-matrix temperature control system, wherein, the temperature control system has a temperature control matrix and a gate driver; the temperature control matrix comprises: N*M temperature control modules forming a N-row M-column matrix, power supply lines, and power return lines;
 each temperature control module comprising:   a temperature control unit adapts to be heated up by electrical power for temperature controlling;   a semiconductor switch provided with a gate electrode connected to the gate driver, the other two electrodes of the semiconductor switch, being connected with the power supply line, and with the power return line through the temperature control unit, respectively,   in the temperature control matrix, each of the temperature control modules in a same row or same column of the temperature control matrix has a temperature control unit, wherein the first ends of said temperature control units are serially connected to a common power return line, and each of the temperature control modules in a same row or a same column of the temperature control matrix has a semiconductor switch serially connects to a common power supply line.   
     
     
         2 . The temperature control system according to  claim 1 , wherein, in the temperature control matrix,
 every temperature control units of all temperature control modules are connected to a common power return line;   the semiconductor switches in the temperature control modules in the same column are serially connected to a common power supply line o M columns of temperature control modules respectively connect to M power supply lines; the M power supply lines selectively supply power to the temperature control modules in their respective connected columns;   gate electrodes of semiconductor switches of temperature control modules in a same row are serially connected to a common gate driving line; N rows of temperature control modules connect to N gate driving lines; the N gate driving lines are connected with one or more gate drivers, respectively; the gate driver controls the N rows of temperature control modules, respectively.   
     
     
         3 . The temperature control system according to  claim 1 , wherein, in the temperature control matrix,
 the temperature control units of all temperature control modules are connected to one common power return line;   the semiconductor switches of all temperature control modules are connected to one common power supply line;   the gate electrode of semiconductor switches in each temperature control module is connected to at least one gate driver; the gate driver control each temperature control module, respectively.   
     
     
         4 . The temperature control system according to  claim 1 , wherein, the semiconductor switches is TFT film transistors or triodes. 
     
     
         5 . An electrostatic chuck, an electrostatic adsorption assembly is set in top portion of the electrostatic chuck for fixing a wafer, wherein, the multi-zone active-matrix temperature control system according to  claim 1  is provided in the electrostatic chuck. 
     
     
         6 . The electrostatic chuck according to  claim 5 , wherein the electrostatic chuck, further includes an overall temperature control system above or below the multi-zone active-matrix temperature control system, the overall temperature control system used for controlling overall temperature distribution in every temperature control modules. 
     
     
         7 . The electrostatic chuck according to  claim 5 , wherein, the gate driver is integrated inside the electrostatic chuck or provided outside of the electrostatic chuck. 
     
     
         8 . A plasma processing apparatus, comprising a plasma reaction chamber, a base for placing a wafer is settled at bottom of inner space of the plasma reaction chamber, wherein, the electrostatic chuck according to  claim 5  is provided in the base. 
     
     
         9 . A temperature control method for a multi-zone active-matrix temperature control system, wherein, the multi-zone active-matrix temperature control system comprises a temperature control matrix and a gate driver; the temperature control matrix comprises: temperature control modules forming a matrix, a power supply line, and a power return line; each temperature control module comprises: a temperature control unit; a semiconductor switch with a gate electrode connected to the gate driver, the semiconductor switch further including other two electrodes first electrode being connected to the power supply line, and second electrode connected to the power return line through the temperature control unit, respectively, selectively connect said two electrodes according to the signal on gate electrode,
 the temperature control method comprising:   supplying power, by the power supply line, to the temperature control modules in a temperature adjusting zone;   turning on the semiconductor switches corresponding to the temperature adjusting zone by the gate driver;   powering on and heating up the temperature control units in the temperature adjusting zone.   
     
     
         10 . The temperature control method according to  claim 9 , wherein, all temperature control modules are connected to a common power return line; the first electrodes of semiconductor switches of temperature modules in a same column are serially connected; the temperature control modules in one common column are connected to one line of power supply lines respectively; gate electrodes of semiconductor switches of temperature control modules in a same row are serially connected; the temperature control modules in one common row are connected to one line of gate driver output lines, respectively;
 the temperature control method comprises:   supplying driving signal by the gate driver, turning on semiconductor switches in the temperature control modules determined by said driving signal for a unit time and then off;   when the gate driver turn on the semiconductor switches of temperature control modules in the temperature adjusting zone  1  supplying power, by the power supply line, to the temperature control modules in the column determined by temperature adjusting zone.   
     
     
         11 . The temperature control method according to  claim 10 , wherein, the manner in which the gate driver turns on semiconductor switches of part of temperature control modules is that: the gate driver sweeps row by row according to a preset sequence, to turn on the semiconductor switches of the temperature control modules for a unit time and then off. 
     
     
         12 . The temperature control method according to  claim 10 , wherein, the manner in which the gate driver turns on semiconductor switches of part of temperature control modules is that: determining the row defined by temperature adjusting zone, the gate driver turns on semiconductor switches of the temperature control modules in the corresponding row for a unit time and then off 
     
     
         13 . The temperature control method according to  claim 9 , wherein, all temperature control modules are connected with one power return line and one power supply line; each semiconductor switch of each temperature control module are connected with one line of gate driver output, respectively;
 the temperature control method comprises:   turning on the semiconductor switches of the temperature control modules in the temperature adjusting zone, and supplying power, by the power supply line, to the temperature control modules whose semiconductor switches are turned on.   
     
     
         14 . The temperature control method according to  claim 9 , wherein, the power supply line supplies heating power to the temperature control units in temperature adjusting zone, wherein the voltage, current, or power supply duration of heating power has variable duty cycle.