Semiconductor structure and manufacturing method thereof

Abstract

A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.

What is claimed is: 
     
         1 . A manufacturing method of a semiconductor structure, comprising:
 forming a first isolation layer on a first surface of a wafer substrate;   forming a conductive pad on the first isolation layer;   forming a hollow region that is through the first surface and a second surface of the wafer substrate, such that the first isolation layer is exposed through the hollow region, and a third surface of the wafer substrate surrounds the hollow region;   performing a laser etching treatment on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad, and an oblique surface of the first isolation layer surrounds the first opening, and a recess is formed by the concave portion and the oblique surface;   forming a second isolation layer on the recess and the second and third surfaces of the wafer substrate; and   patterning the second isolation layer, such that a second opening is formed in the second isolation layer to expose the conductive pad, wherein a diameter of the second opening is smaller than a diameter of the recess.   
     
     
         2 . The manufacturing method of the semiconductor structure of  claim 1 , wherein patterning the second isolation layer comprises:
 forming a patterned photoresist layer on the second isolation layer;   etching a portion of the second isolation layer that is not covered by the photoresist layer, such that the second opening is formed in the second isolation layer to expose the conductive pad; and   removing the photoresist layer.   
     
     
         3 . The manufacturing method of the semiconductor structure of  claim 1 , further comprising:
 forming a redistribution layer on the second isolation layer and the conductive pad that is exposed through the second opening.   
     
     
         4 . The manufacturing method of the semiconductor structure of  claim 1 , wherein performing the laser etching treatment on the first isolation layer comprises:
 providing a mask that has a through hole; and   irradiating the first isolation layer through the through hole of the mask by a laser light.   
     
     
         5 . A manufacturing method of a semiconductor structure, comprising:
 forming a first isolation layer on a first surface of a wafer substrate;   forming a conductive pad on the first isolation layer;   forming a hollow region through the first surface and a second surface of the wafer substrate, such that the first isolation layer is exposed through the hollow region, and a third surface is formed on the wafer substrate surrounding the hollow region;   forming a second isolation layer on the second and third surfaces of the wafer substrate and the first isolation layer that is exposed through the hollow region; and   performing a laser etching treatment on the first and second isolation layers in the hollow region, such that a first opening is formed in the first isolation layer, a second opening is formed in the second isolation layer, and a concave portion exposed through the first and second openings is formed in the conductive pad.   
     
     
         6 . The manufacturing method of the semiconductor structure of  claim 5 , further comprising:
 forming a redistribution layer on the second isolation layer and the conductive pad that is exposed through the first and second openings.   
     
     
         7 . The manufacturing method of the semiconductor structure of  claim 5 , wherein performing the laser etching treatment on the first and second isolation layers comprises:
 providing a mask that has a through hole; and   irradiating the first isolation layer through the through hole of the mask by a laser light.