Distributed, Non-Concentric Multi-Zone Plasma Source Systems, Methods and Apparatus

Abstract

A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. The second plasma source is arranged concentrically around the first plasma source. Also included is a first plurality of ferrites encircling the first plasma source and a second plurality of ferrites encircling the second plasma source. A first primary winding is disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source. The first and second primary windings pass through the respective plurality of ferrites. A plurality of outlets is disposed on a lower portion of the first and second plasma sources, and the plurality of outlets is oriented between adjacent ones of the first and second plurality of ferrites. The plurality of outlets is configured to connect the first and second plasma sources of the chamber top to the processing chamber.

What is claimed is: 
     
         1 . A chamber top for a processing chamber, comprising,
 a first plasma source oriented horizontally over the chamber top;   a second plasma source oriented horizontally over the chamber top, the second plasma source is arranged concentrically around the first plasma source;   a first plurality of ferrites encircling the first plasma source, and a second plurality of ferrites encircling the second plasma source;   a first primary winding disposed around an outer circumference of the first plasma source and a second primary winding disposed around an outer circumference of the second plasma source, such that the first and second primary windings pass through the respective plurality of ferrites; and   a plurality of outlets disposed on a lower portion of the first and second plasma sources, the plurality of outlets being oriented between adjacent ones of the first and second plurality of ferrites;   wherein the plurality of outlets is configured to connect the first and second plasma sources of the chamber top to the processing chamber.   
     
     
         2 . The chamber top of  claim 1 , wherein each of the first and second plurality of ferrites are substantially evenly spaced apart with respect to each other. 
     
     
         3 . The chamber top of  claim 1 , wherein the first and second plasma sources are ring shaped. 
     
     
         4 . The chamber top of  claim 1 , wherein each of the plurality of ferrites respectively encircle each of the plasma sources at discrete cross-sections, and at each discrete cross-section a respective ferrite includes a bottom region, side regions and a top region. 
     
     
         5 . The chamber top of  claim 4 , wherein the bottom region of each ferrite is disposed adjacent to a bottom surface of a respective one of the first and second plasma sources, the side regions of each ferrite is disposed adjacent to side surfaces of said respective one of the first and second plasma sources, the top region of each ferrite is disposed adjacent to a top surface of said respective one of the first and second plasma sources. 
     
     
         6 . The chamber top of  claim 1 , wherein inlets in the chamber top are aligned with the plurality of outlets to connect the first and second plasma sources of the chamber top to the process chamber. 
     
     
         7 . The chamber top of  claim 1 , wherein each of the first and second primary windings is coupled to a respective primary current source controlled by a controller. 
     
     
         8 . The chamber top of  claim 1 , wherein the chamber top is connected to chamber walls of the processing chamber, the processing chamber includes a substrate support that is disposed in the processing chamber and below the chamber top. 
     
     
         9 . The chamber top of  claim 1 , further comprising,
 a plurality of process gas inlets connected to each of the first and second plasma sources, the process gas inlets being interfaced with one or more processing gases to form a plasma in the respective plasma sources.   
     
     
         10 . The chamber top of  claim 1 , wherein at least a portion of the plurality outlets are coupled to a ground potential. 
     
     
         11 . The chamber top of  claim 1 , wherein the first plasma source is controlled independent of the second plasma source to provide multi-zone plasma control for plasma directed into said processing chamber. 
     
     
         12 . A chamber top for a processing chamber, comprising,
 a first ring chamber disposed over the chamber top;   a second ring chamber disposed over the chamber top, the second ring chamber is arranged concentrically around the first ring chamber;   a first plurality of ferrites encircling the first ring chamber, and a second plurality of ferrites encircling the second ring chamber;   a first primary winding disposed around an outer circumference of the first ring chamber and a second primary winding disposed around an outer circumference of the second ring chamber, such that the first and second primary windings pass through the respective plurality of ferrites; and   a plurality of outlets disposed on a lower portion of the first and second ring chambers, each of the plurality of outlets is located in between adjacent ones of the first and second plurality of ferrites;   wherein the plurality of outlets is configured to connect the first and second ring chambers of the chamber top to the processing chamber.   
     
     
         13 . The chamber top of  claim 12 , wherein the first ring chamber is controlled independent of the second ring chamber to provide multi-zone plasma control for plasma directed into said processing chamber. 
     
     
         14 . The chamber top of  claim 12 , wherein each of the first and second plurality of ferrites are substantially evenly spaced apart with respect to each other. 
     
     
         15 . The chamber top of  claim 12 , wherein each of the plurality of ferrites respectively encircle each of the ring chambers at discrete cross-sections, and at each discrete cross-section a respective ferrite includes a bottom region, side regions and a top region. 
     
     
         16 . The chamber top of  claim 15 , wherein the bottom region of each ferrite is disposed adjacent to a bottom surface of a respective one of the first and second ring chambers, the side regions of each ferrite is disposed adjacent to side surfaces of said respective one of the first and second ring chambers, the top region of each ferrite is disposed adjacent to a top surface of said respective one of the first and second ring chambers. 
     
     
         17 . The chamber top of  claim 12 , wherein each of the first and second primary windings is coupled to a respective primary current source controlled by a controller. 
     
     
         18 . The chamber top of  claim 12 , wherein the chamber top is connected to chamber walls of the processing chamber, the processing chamber includes a substrate support that is disposed in the processing chamber and below the chamber top. 
     
     
         19 . The chamber top of  claim 12 , further comprising,
 a plurality of process gas inlets connected to each of the first and second ring chambers, the process gas inlets being interfaced with one or more processing gases to form a plasma in the respective ring chambers.   
     
     
         20 . The chamber top of  claim 12 , wherein at least a portion of the plurality outlets are coupled to a ground potential.