Bonding wire for semiconductor device

Abstract

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

1 . A bonding wire for a semiconductor device comprising:
 a core material having Cu as a main component and containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass;   a coating layer having Pd as a main component provided on a surface of the core material; and   a skin alloy layer containing Au and Pd provided on a surface of the coating layer,   wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more.   
     
     
         2 . The bonding wire for a semiconductor device according to  claim 1 , wherein
 the coating layer having Pd as a main component has a thickness of 20 to 90 nm, and   the skin alloy layer containing Au and Pd has a thickness of 0.5 to 40 nm and has a maximum concentration of Au of 15 to 75 at %.   
     
     
         3 . The bonding wire for a semiconductor device according to  claim 1 , wherein
 the core material further contains either or both of Au and Ni, and   the total amount of Pd, Pt, Au and Ni in the core material is more than 0.1% by mass and 3.0% by mass or less.   
     
     
         4 . The bonding wire for a semiconductor device according to  claim 1 , wherein
 the bonding wire further contains one or more of P, B, Be, Fe, Mg, Ti, Zn, Ag and Si, and   the total concentration of these elements in the entire wire is in a range of 0.0001 to 0.01% by mass.   
     
     
         5 . The bonding wire for a semiconductor device according to  claim 1 , wherein an element constituting the core material and an element constituting the skin alloy layer are diffused to the coating layer. 
     
     
         6 . The bonding wire for a semiconductor device according to  claim 1 , wherein, when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30% or more among crystal orientations in the wire longitudinal direction. 
     
     
         7 . The bonding wire for a semiconductor device according to  claim 1 , wherein the concentration of Cu at the outermost surface of the wire is less than 14.4 at %. 
     
     
         8 . The bonding wire for a semiconductor device according to  claim 1 , wherein the concentration of Cu at the outermost surface of the wire is 10 at % or less.