Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Abstract

Described is a technique of improving a quality of a film formed on a substrate. According, a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) or after (b) is performed.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process chamber configured to process a substrate;   a vaporizer configured to generate a first gas to be supplied onto the substrate;   a first gas supply pipe connected to the vaporizer and configured to supply the first gas to the process chamber, the first gas supply pipe having a first timing valve configured to control a timing of a supply of the first gas;   an inert gas supply system configured to supply an inert gas to one or both of a vaporizer inlet pipe configured to supply a gas to the vaporizer and the first gas supply pipe;   a vaporizer outlet pipe configured to supply the first gas from the vaporizer to the first gas supply pipe;   a first gas discharge system disposed at the first gas supply pipe and configured to exhaust an inner atmosphere of the first gas supply pipe;   a second gas discharge system disposed at the vaporizer outlet pipe and configured to exhaust an inner atmosphere of the vaporizer; and   a controller configured to control the first timing valve, the inert gas supply system, the first gas discharge system and the second gas discharge system.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the second gas discharge system comprises a second discharge pipe and a second discharge valve, and
 the controller is further configured to: adjust opening time of the second discharge valve based on one or both of an amount of source in the vaporizer and an idling time of the vaporizer; and control the second discharge valve so as to exhaust the inner atmosphere of the vaporizer to the second discharge pipe.   
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the second gas discharge system comprises a second discharge pipe and a second discharge valve, and
 the controller is configured to control the first gas discharge system and the second gas discharge system so as to exhaust the inner atmosphere of the vaporizer to the second discharge pipe after exhausting the inner atmosphere of the first gas supply pipe to the first gas discharge system and then.   
     
     
         4 . The substrate processing apparatus of  claim 2 , wherein the controller is configured to control the first gas discharge system and the second gas discharge system so as to exhaust the inner atmosphere of the vaporizer to the second discharge pipe after exhausting the inner atmosphere of the first gas supply pipe to the first gas discharge system. 
     
     
         5 . The substrate processing apparatus of  claim 3 , further comprising a purge valve disposed above a connecting part between the first gas supply pipe and the vaporizer outlet pipe and below a connecting part between the vaporizer inlet pipe and the first gas supply pipe, and
 wherein the controller is further configured to control the purge valve so as to supply the inert gas to the first gas supply pipe via the purge valve when the inner atmosphere of the first gas supply pipe is exhausted to the first gas discharge system.   
     
     
         6 . The substrate processing apparatus of  claim 4 , further comprising a purge valve disposed above a connecting part between the first gas supply pipe and the vaporizer outlet pipe and below a connecting part between the vaporizer inlet pipe and the first gas supply pipe, and
 wherein the controller is further configured to control the purge valve so as to supply the inert gas to the first gas supply pipe via the purge valve when the inner atmosphere of the first gas supply pipe is exhausted to the first gas discharge system.   
     
     
         7 . The substrate processing apparatus of  claim 1 , further comprising an outlet valve disposed at the vaporizer outlet pipe, and
 wherein the controller is further configured to control the first gas discharge system, the second gas discharge system and the outlet valve so as to: vacuum-exhaust the inner atmosphere of the first gas supply pipe; and supply the first gas from the vaporizer to the first gas supply pipe after exhausting the inner atmosphere of the vaporizer.   
     
     
         8 . The substrate processing apparatus of  claim 2 , further comprising an outlet valve disposed at the vaporizer outlet pipe, and
 wherein the controller is further configured to control the first gas discharge system, the second gas discharge system and the outlet valve so as to: vacuum-exhaust the inner atmosphere of the first gas supply pipe; and supply the first gas from the vaporizer to the first gas supply pipe after exhausting the inner atmosphere of the vaporizer.   
     
     
         9 . The substrate processing apparatus of  claim 3 , further comprising an outlet valve disposed at the vaporizer outlet pipe, and
 wherein the controller is further configured to control the first gas discharge system, the second gas discharge system and the outlet valve so as to: vacuum-exhaust the inner atmosphere of the first gas supply pipe; and supply the first gas from the vaporizer to the first gas supply pipe after exhausting the inner atmosphere of the vaporizer.   
     
     
         10 . The substrate processing apparatus of  claim 5 , further comprising an outlet valve disposed at the vaporizer outlet pipe, and
 wherein the controller is further configured to control the first gas discharge system, the second gas discharge system and the outlet valve so as to: vacuum-exhaust the inner atmosphere of the first gas supply pipe; and supply the first gas from the vaporizer to the first gas supply pipe after exhausting the inner atmosphere of the vaporizer.   
     
     
         11 . The substrate processing apparatus of  claim 2 , further comprising an outlet valve disposed at the vaporizer outlet pipe, and
 wherein the controller is further configured to control the outlet valve and the second discharge valve so as to: open the outlet valve when the second discharge valve is closed; and open the second discharge valve when the outlet valve is closed.   
     
     
         12 . The substrate processing apparatus of  claim 2 , wherein the second discharge valve comprises a three-way valve disposed at a connecting part between the second discharge pipe and the vaporizer outlet pipe, and
 the controller is configured to control the second discharge valve to form one of: a gas supply path from the vaporizer to the first gas supply pipe; and a gas exhaust path from the vaporizer to the second gas supply pipe.   
     
     
         13 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
 (a) generating a first gas by a vaporizer;   (b) supplying the first gas from the vaporizer via a first gas supply pipe and a first timing valve disposed at the first gas supply pipe to a process chamber where a substrate is accommodated;   (c) supplying an inert gas to one or both of a vaporizer inlet pipe connected to the vaporizer and the first gas supply pipe;   (d) supplying the first gas from the vaporizer via a vaporizer outlet pipe to the first gas supply pipe;   (e) exhausting an inner atmosphere of the first gas supply pipe from a first gas discharge system connected to the first gas supply pipe; and   (f) exhausting an inner atmosphere of the vaporizer from a second gas discharge system disposed at the vaporizer outlet pipe by supplying the inert gas from the vaporizer inlet pipe to the vaporizer.   
     
     
         14 . The non-transitory computer-readable recording medium of  claim 13 , wherein the second gas discharge system comprises a second discharge pipe and a second discharge valve, further comprising: (g) exhausting the inner atmosphere of the vaporizer to the second discharge pipe by adjusting opening time of the second discharge valve based on one or both of an amount of source in the vaporizer and an idling time of the vaporizer. 
     
     
         15 . The non-transitory computer-readable recording medium of  claim 13 , wherein (f) is performed after (e) is performed.