Plasma Processing System with Synchronized Signal Modulation
Abstract
A system and method for using plasma to treat a substrate are described. A plasma processing system includes a substrate holder arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system. The system further includes a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A plasma processing system, comprising:
a substrate holder arranged to support a substrate; a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system; a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system; and a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density.
2 . The plasma processing system of claim 1 , wherein the first frequency is greater than about 50 MHz, and the second frequency is less than about 5 MHz.
3 . The plasma processing system of claim 1 , wherein the waveform generator is further configured to adjust a waveform of the second signal, and wherein the waveform is a square wave.
4 . The plasma processing system of claim 1 , wherein the waveform generator is further configured to adjust a waveform of the second signal, and wherein the waveform is a saw-tooth waveform.
5 . The plasma processing system of claim 1 , wherein the first signal and the second signal are coupled to the substrate holder.
6 . The plasma processing system of claim 1 , wherein the first signal is coupled to an electrode opposing the substrate holder, and the second signal is coupled to the substrate holder.
7 . A plasma processing system, comprising:
a substrate holder disposed arranged to support a substrate; a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system; a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system; a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density; and a controller configured to receive data relating to a spatial and temporal distribution of the plasma density across the substrate, and instruct the waveform generator to adjust the duty cycle to achieve a target spatial distribution.
8 . The plasma processing system of claim 7 , wherein the first frequency is greater than about 50 MHz, and the second frequency is less than about 5 MHz.
9 . The plasma processing system of claim 7 , further comprising:
an in-situ diagnostic coupled to the plasma processing system, and configured to measure data related to the spatial and temporal distribution of the plasma density.
10 . The plasma processing system of claim 7 , wherein the waveform generator is further configured to adjust a waveform of the second signal, and wherein the waveform is a square wave.
11 . The plasma processing system of claim 7 , wherein the waveform generator is further configured to adjust a waveform of the second signal, and wherein the waveform is a saw-tooth waveform.
12 . The plasma processing system of claim 7 , wherein the first signal and the second signal are coupled to the substrate holder.
13 . The plasma processing system of claim 7 , wherein the first signal is coupled to an electrode opposing the substrate holder, and the second signal is coupled to the substrate holder.
14 . A method for plasma processing, comprising:
placing a substrate on a substrate holder disposed within a plasma processing system; applying a first signal to plasma formed in the plasma processing system using a first signal generator at a first frequency; applying a second signal at a second frequency that is less than the first frequency to the plasma formed in the plasma processing system using a second signal generator; spatially and temporally controlling the plasma density by dynamically adjusting a duty cycle of the second signal while the first signal is coupled to the plasma.
15 . The method of claim 14 , wherein the first frequency is greater than about 50 MHz, and the second frequency is less than about 5 MHz.
16 . The method of claim 14 , wherein spatially and temporally controlling the plasma density comprises:
using a waveform generator to adjust a waveform and the duty cycle of the second signal.
17 . The method of claim 16 , wherein the waveform is a square wave.
18 . The method of claim 16 , wherein the waveform is a saw-tooth waveform.
19 . The method of claim 14 , wherein spatially and temporally controlling the plasma density comprises:
increasing the duty cycle of the second signal to decrease the plasma density at an edge of the substrate relative to the center of the substrate; and decreasing the duty cycle of the second signal to increase the plasma density at the center of the substrate relative to the edge of the substrate.
20 . The method of claim 14 , further comprising:
sensing the plasma density of the plasma using an in-situ diagnostic coupled to the plasma processing system; generating data relating to a spatial and temporal distribution of the plasma density across the substrate according to the sensed plasma density; and instructing a waveform generator to adjust the duty cycle to achieve a target spatial distribution.Join the waitlist — get patent alerts
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