US2021358885A1PendingUtilityA1

Laser bonding method and a semiconductor package including a bonding part and a bonding target

Assignee: ELECTRONICS & TELECOMMUNICATIONS RES INSTPriority: Sep 3, 2018Filed: Jul 28, 2021Published: Nov 18, 2021
Est. expirySep 3, 2038(~12.1 yrs left)· nominal 20-yr term from priority
H10W 90/734H10W 72/07355H10W 72/07336H10W 72/07335H10W 72/07332H10W 72/3528H10W 72/353H10W 72/352H10W 72/325H10W 72/30H10W 72/07141H10W 72/07338H10W 72/952H10W 72/07331H10W 72/07327H10W 72/354H10W 72/073H01L 2224/32227H01L 2224/32503H01L 24/83H01L 2224/29347H01L 2224/29344H01L 2224/29311H01L 2224/8381H01L 2224/29313H01L 24/29H01L 2224/29309H01L 2224/83224H01L 24/32H01L 2224/29339H01L 2224/83203H01L 2224/29486
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Claims

Abstract

Provides is a laser bonding method. The method includes forming a bonding part on a substrate; aligning a bonding target on the bonding part and bonding the bonding part and the bonding target. The bonding includes heating the bonding part using a laser. The bonding part formed on the substrate includes an adhesive layer and a conductive particle located in the adhesive layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor package, comprising:
 a substrate including a pad;   a bonding part disposed on the substrate and comprised of an adhesive layer and a conductive particle and a spacer, both of the conductive particle and the spacer being disposed within the adhesive layer; and   a bonding target aligned and disposed on the bonding part and comprised of a semiconductor including a pad,   wherein the conductive particle electrically connects the pad of the substrate and the pad of the bonding target.   
     
     
         2 . The semiconductor package of  claim 1 , wherein the spacer contacts the pad of the substrate and the pad of the bonding target. 
     
     
         3 . The semiconductor package of  claim 1 , further comprising an upper intermetallic compound between the pad of the bonding target and the conductive particle. 
     
     
         4 . The semiconductor package of  claim 1 , further comprising a lower intermetallic compound between the pad of the substrate and the conductive particle. 
     
     
         5 . The semiconductor package of  claim 1 , wherein the conductive particle has a diameter that is larger than a diameter of the spacer. 
     
     
         6 . The semiconductor package of  claim 1 , wherein the spacer is provided in plurality as a plurality of spacers. 
     
     
         7 . The semiconductor package of  claim 1 , wherein the conductive particle is provided in plurality as a plurality of conductive particles. 
     
     
         8 . The semiconductor package of  claim 7 , wherein the pad of the substrate is provided in plurality as a plurality of pads of the substrate. 
     
     
         9 . The semiconductor package of  claim 8 , wherein at least two conductive particles among the plurality of the conductive particles are disposed on a same pad of the substrate among the plurality of pads of the substrate. 
     
     
         10 . The semiconductor package of  claim 8 , wherein adjacent pads of the substrate among the plurality of pads of the substrate are horizontally spaced apart from each other, respectively.

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