US2022013265A1PendingUtilityA1
Electronic substrates having embedded dielectric magnetic material to form inductors
Est. expiryDec 28, 2037(~11.4 yrs left)· nominal 20-yr term from priority
H10W 90/754H10W 90/728H10W 90/724H10W 90/701H10W 72/07236H10W 72/07233H10W 72/07232H10W 72/252H10W 72/29H10W 99/00H10W 70/635H10W 70/095H10W 70/69H10W 70/65H10W 70/685H10W 20/497H10W 20/031H01F 41/02H01F 1/37H01F 1/28H05K 2201/086H05K 1/165H05K 2201/0215H05K 2201/0187H05K 1/181H01F 1/20H05K 1/115H01L 23/49838H01L 23/49827H01L 23/49816H01L 24/16H01L 2924/19011H01L 21/486H01L 21/481H01L 23/49894
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Claims
Abstract
An inductor may be fabricated comprising a magnetic material layer and an electrically conductive via or trace extending through the magnetic material layer, wherein the magnetic material layer comprises dielectric magnetic filler particles within a carrier material. Further embodiments may include incorporating the inductor of the present description into an electronic substrate and may further include an integrated circuit device attached to the electronic substrate and the electronic substrate may further be attached to a board, such as a motherboard.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An apparatus comprising a magnetic material layer and an electrically conductive via extending through the magnetic material layer, wherein the magnetic material layer comprises dielectric magnetic filler particles within a carrier material and wherein the magnetic material layer contacts the electrically conductive via.
2 . The apparatus of claim 1 , wherein the dielectric magnetic filler particles have a resistivity of greater than about 5.5e-7 ohm meters.
3 . The apparatus of claim 1 , wherein the dielectric magnetic filler particles are selected from the group comprising iron-base soft magnetic fillers, iron/cobalt/aluminum alloys, cobalt/iron/hafnium/oxygen alloys, iron/hafnium/oxygen alloy, and iron/aluminum/oxygen alloy.
4 . The apparatus of claim 1 , wherein the magnetic material layer comprises a layered stack.
5 . The apparatus of claim 4 , wherein the layered stack comprises a center layer comprising iron/cobalt/nickel alloy filler particles in a carrier material between a pair of exterior layers comprising nickel/iron alloy particles in a carrier material.
6 . The apparatus of claim 5 , wherein the iron/cobalt/nickel alloy filler particles comprise (Fe 0.7 Co 0.3 ) 0.95 Ni 0.05 .
7 . The apparatus of claim 5 , wherein the nickel iron alloy filler particles comprise Ni 0.81 Fe 0.19 .
8 . The apparatus of claim 1 , wherein the carrier material comprises a polymer resin.
9 . An electronic system, comprising:
a board; and an electronic package attached to the board, wherein the electronic package comprises:
an electronic substrate having at least one dielectric layer;
an inductor embedded in the electronic substrate, wherein the inductor comprises a magnetic material layer and an electrically conductive via extending through the magnetic material layer, wherein the magnetic material layer comprises dielectric magnetic filler particles within a carrier material and wherein the magnetic material layer contacts the electrically conductive via.
10 . The electronic system of claim 9 , wherein the dielectric magnetic filler particles have a resistivity of greater than about 5.5e-7 ohm meters.
11 . The electronic system of claim 9 , wherein the dielectric magnetic filler particles are selected from the group comprising iron-base soft magnetic fillers, iron/cobalt/aluminum alloys, cobalt/iron/hafnium/oxygen alloys, iron/hafnium/oxygen alloy, and iron/aluminum/oxygen alloy.
12 . The electronic system of claim 9 , wherein the magnetic material layer comprises a layered stack.
13 . The electronic system of claim 12 , wherein the layered stack comprises a center layer comprising iron/cobalt/nickel alloy filler particles in a carrier material between a pair of exterior layers comprising nickel/iron alloy particles in a carrier material.
14 . The electronic system of claim 13 , wherein the iron/cobalt/nickel alloy filler particles comprise (Fe 0.7 Co 0.3 ) 0.95 Ni 0.05 .
15 . The electronic system of claim 13 , wherein the nickel iron alloy filler particles comprise Ni 0.81 Fe 0.19 .
16 . The electronic system of claim 9 , wherein the carrier material comprises a polymer resin.
17 . The electronic system of claim 9 , wherein the electronic substrate includes a substrate core.
18 . A method of fabricating an electronic structure, comprising:
forming at least one dielectric layer; forming at least one via through the at least one dielectric layer; forming a magnetic material layer within the at least one via, wherein the magnetic material layer comprises dielectric magnetic filler particles within a carrier material; and forming an electrically conductive via extending through the magnetic material layer, wherein the magnetic material layer contacts the electrically conductive via.
19 . The method of claim 18 , wherein the dielectric magnetic filler particles have a resistivity of greater than about 5.5e-7 ohm meters.
20 . The method of claim 18 , wherein the dielectric magnetic filler particles are selected from the group comprising iron-base soft magnetic fillers, iron/cobalt/aluminum alloys, cobalt/iron/hafnium/oxygen alloys, iron/hafnium/oxygen alloy, and iron/aluminum/oxygen alloy.
21 . The method of claim 18 , wherein forming the magnetic material layer comprises forming a layered stack.
22 . The method of claim 21 , wherein forming the layered stack comprises forming a center layer comprising iron/cobalt/nickel alloy filler particles in a carrier material between a pair of exterior layers comprising nickel/iron alloy particles in a carrier material.
23 . The method of claim 22 , wherein the iron/cobalt/nickel alloy filler particles comprise (Fe 0.7 Co 0.3 ) 0.95 Ni 0.05 .
24 . The method of claim 22 , wherein the nickel iron alloy filler particles comprise Ni 0.81 Fe 0.19 .
25 . The method of claim 18 , wherein the carrier material comprises a polymer resin.Join the waitlist — get patent alerts
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