Distribution components for semiconductor processing systems

Abstract

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

1 . A substrate processing system comprising:
 a chamber body defining a transfer region;   a first lid plate seated on the chamber body along a first surface of the first lid plate, wherein the first lid plate defines a plurality of apertures through the first lid plate;   a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate, wherein the plurality of lid stacks at least partially define a plurality of processing regions vertically offset from the transfer region;   a plurality of isolators, wherein an isolator of the plurality of isolators is positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate; and   a plurality of dielectric plates, wherein a dielectric plate of the plurality of dielectric plates is seated on each isolator of the plurality of isolators.   
     
     
         2 . The substrate processing system of  claim 1 , wherein each isolator of the plurality of isolators defines a recessed ledge on which an associated dielectric plate of the plurality of dielectric plates is seated. 
     
     
         3 . The substrate processing system of  claim 1 , wherein a gap of less than or about 5 mm is maintained between each dielectric plate of the plurality of dielectric plates and each associated lid stack of the plurality of lid stacks. 
     
     
         4 . The substrate processing system of  claim 1 , wherein the transfer region comprises a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among a plurality of substrate supports within the transfer region. 
     
     
         5 . The substrate processing system of  claim 1 , further comprising:
 a second lid plate defining a plurality of apertures through the second lid plate, wherein the second lid plate is seated on the plurality of lid stacks, each aperture of the plurality of apertures through the second lid plate accessing a lid stack of the plurality of lid stacks.   
     
     
         6 . The substrate processing system of  claim 5 , wherein each lid stack of the plurality of lid stacks includes a faceplate, wherein the second lid plate defines a first aperture accessing the faceplate of each lid stack of the plurality of lid stacks at a first position, and wherein the second lid plate defines a second aperture accessing the faceplate of each lid stack of the plurality of lid stacks at a second position. 
     
     
         7 . The substrate processing system of  claim 6 , wherein the faceplate of each lid stack of the plurality of lid stacks comprises a first plate defining a set of channels in a first surface of the first plate, wherein the set of channels extend from a first location proximate the first aperture through the second lid plate accessing the faceplate, and wherein the set of channels extend to a second location at which a first aperture extends through the faceplate. 
     
     
         8 . The substrate processing system of  claim 7 , wherein the first plate defines a second aperture through the faceplate at a third location proximate the second aperture through the second lid plate accessing the faceplate. 
     
     
         9 . The substrate processing system of  claim 8 , further comprising:
 a first manifold seated in the first aperture through the second lid plate and fluidly coupled with a first fluid source; and   a second manifold seated in the second aperture through the second lid plate and fluidly coupled with a second fluid source.   
     
     
         10 . The substrate processing system of  claim 8 , wherein the second lid plate defines a third aperture accessing the faceplate of each lid stack of the plurality of lid stacks at a third position, the substrate processing system further comprising:
 a plurality of RF feedthroughs, an RF feedthrough extending through each of the third apertures of the second lid plate and contacting the faceplate of an associated lid stack.   
     
     
         11 . The substrate processing system of  claim 10 , further comprising:
 an insulator positioned between the second lid plate and the faceplate of each lid stack of the plurality of lid stacks.   
     
     
         12 . A substrate processing chamber faceplate comprising:
 a first plate defining a first set of channels in a first surface of the first plate, wherein the first set of channels extend from a first location to a plurality of second locations, and wherein a first aperture extending through the first plate is defined at each second location of the plurality of second locations;   a second plate coupled with the first plate, wherein the second plate defines a plurality of first apertures extending through the second plate, and wherein the second plate defines a greater number of apertures than the first plate;   a third plate coupled with the second plate, wherein the third plate comprises a plurality of tubular extensions extending from a first surface of the third plate towards the second plate, wherein the third plate includes an identical number of tubular extensions as first apertures of the second plate, and wherein each tubular extension of the third plate is axially aligned with a corresponding first aperture through the second plate; and   a fourth plate coupled with the third plate, wherein the fourth plate defines a plurality of first apertures extending through the fourth plate, and wherein the fourth plate defines a greater number of apertures than the second plate.   
     
     
         13 . The substrate processing chamber faceplate of  claim 12 , wherein the first plate defines a second set of channels in a second surface of the first plate opposite the first surface of the first plate, and wherein each channel of the second set of channels extends from a first aperture through the first plate at each second location of the plurality of second locations of the first plate. 
     
     
         14 . The substrate processing chamber faceplate of  claim 13 , wherein each channel of the second set of channels extends in at least two directions along the second surface of the first plate from the first aperture through the first plate at each second location of the plurality of second locations of the first plate. 
     
     
         15 . The substrate processing chamber faceplate of  claim 12 , wherein a plurality of first apertures extending through the first plate is defined at each second location of the plurality of second locations of the first plate. 
     
     
         16 . The substrate processing chamber faceplate of  claim 12 , wherein the first plate defines a second aperture extending through the first plate at a third location, wherein the second plate defines a second aperture extending through the second plate, and wherein the second aperture of the second plate is axially aligned with the second aperture of the first plate. 
     
     
         17 . The substrate processing chamber faceplate of  claim 16 , wherein coupling of the second plate and the third plate forms a volume defined about the tubular extensions of the third plate, wherein a third channel is formed through the second aperture extending through the second plate and the second aperture extending through the first plate, and wherein the volume is fluidly accessed through the third channel. 
     
     
         18 . The substrate processing chamber faceplate of  claim 17 , wherein the third plate defines a plurality of second apertures extending through the third plate, wherein the fourth plate defines a plurality of second apertures extending through fourth plate, wherein a plurality of fourth channels is formed through the plurality of second apertures extending through the third plate and the plurality of second apertures extending through the fourth plate, and wherein the volume is fluidly accessed through the plurality of fourth channels. 
     
     
         19 . The substrate processing chamber faceplate of  claim 18 , wherein the first apertures of the first plate, the first apertures of the second plate, the tubular extensions of the third plate, and the first apertures of the fourth plate form a first flow path through the substrate processing chamber faceplate that is fluidly isolated from a second flow path through the substrate processing chamber faceplate extending through the third channel, the plurality of fourth channels, and the volume. 
     
     
         20 . A substrate processing system comprising:
 a processing chamber defining a processing region; and   a faceplate positioned within the processing chamber, wherein the faceplate comprises:
 a first plate defining a first set of channels in a first surface of the first plate, wherein the first set of channels extend from a first location to a plurality of second locations, and wherein a first aperture extending through the first plate is defined at each second location of the plurality of second locations, 
 a second plate coupled with the first plate, wherein the second plate defines a plurality of first apertures extending through the second plate, and wherein the second plate defines a greater number of apertures than the first plate, 
 a third plate coupled with the second plate, wherein the third plate comprises a plurality of tubular extensions extending from a first surface of the third plate towards the second plate, wherein the third plate includes an identical number of tubular extensions as first apertures of the second plate, and wherein each tubular extension of the third plate is axially aligned with a corresponding first aperture through the second plate, and 
 a fourth plate coupled with the third plate, wherein the fourth plate defines a plurality of first apertures extending through the fourth plate, and wherein the fourth plate defines a greater number of apertures than the second plate.