Techniques for an inductor at a first level interface

Abstract

Techniques are provided for an inductor at a first level interface between a first die and a second die. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first die, second conductive traces of a second die, and a plurality of connectors configured to connect the first die with the second die. Each connector of the plurality of connecters can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor die having a plurality of external terminations;   a substrate coupled to the semiconductor die with a number of solder interconnects;   an inductor winding comprising at least some of the plurality of external terminations, the number of solder interconnects, and a plurality of traces in the substrate; and   a layer of magnetic material disposed in a space between the semiconductor die and the substrate, the layer of magnetic material located within the number of solder interconnects between the semiconductor die and the substrate.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the layer of magnetic material is attached to the semiconductor die. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the layer of magnetic material is attached to the substrate. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the number of solder interconnects includes a number of solder balls. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the number of solder interconnects are arranged in two parallel rows. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the traces in the substrate are on a surface of the substrate adjacent to the semiconductor die. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the traces in the substrate are on a surface of the substrate facing away from the semiconductor die. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the magnetic material includes an insulating magnetic material. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the magnetic material includes an FeXN, where X includes one or more metal element. 
     
     
         10 . A semiconductor device, comprising:
 a semiconductor die having a plurality of external terminations;   an interposer coupled to the semiconductor die with a first number of solder interconnects;   a substrate coupled to the interposer with a second number of solder interconnects;   an inductor winding comprising at least some of the plurality of external terminations, the number of first solder interconnects, the number of second solder interconnects, and a plurality of traces in the substrate; and   a layer of magnetic material disposed in a space between the semiconductor die and the interposer, the layer of magnetic material located within the number of first number of solder interconnects between the semiconductor die and the interposer.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the interposer includes a silicon interposer. 
     
     
         12 . The semiconductor device of  claim 10 , further including a second layer of magnetic material disposed in a space between the interposer and the substrate, the second layer of magnetic material located within the number of second number of solder interconnects between the interposer and the substrate. 
     
     
         13 . The semiconductor device of  claim 10 , wherein the layer of magnetic material includes an insulating magnetic material. 
     
     
         14 . The semiconductor device of  claim 10 , wherein the layer of magnetic material includes an FeXN, where X includes one or more metal element. 
     
     
         15 . The semiconductor device of  claim 12 , wherein the second layer of magnetic material includes an insulating magnetic material. 
     
     
         16 . The semiconductor device of  claim 12 , wherein the second layer of magnetic material includes an FeXN, where X includes one or more metal element.