US2022262860A1PendingUtilityA1

Selector devices

69
Assignee: INTEL CORPPriority: Sep 14, 2017Filed: May 4, 2022Published: Aug 18, 2022
Est. expirySep 14, 2037(~11.2 yrs left)· nominal 20-yr term from priority
Inventors:Elijah V. KarpovBrian S. DoyleRavi PillarisettyPrashant MajhiAbhishek A. Sharma
H01L 45/04H01L 45/144H01L 27/2427H01L 27/224H10N 70/882H10B 63/80H10B 63/24H10N 70/20H10N 70/826H10N 70/8828H10B 61/10
69
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Claims

Abstract

Disclosed herein are selector devices and related devices and techniques. In some embodiments, a selector device may include a first electrode, a second electrode, and a selector material between the first electrode and the second electrode. The selector material may include germanium, tellurium, and sulfur.

Claims

exact text as granted — not AI-modified
1 . A selector device, comprising:
 a first electrode;   a second electrode; and   a selector material between the first electrode and the second electrode, the selector material having a glass transition temperature that is greater than 350 degrees Celsius.   
     
     
         2 . The selector device of  claim 1 , wherein the selector material further includes silicon. 
     
     
         3 . The selector device of  claim 2 , wherein the selector material includes between 2 atomic-percent and 15 atomic-percent of silicon. 
     
     
         4 . The selector device of  claim 1 , wherein the selector material further includes nitrogen. 
     
     
         5 . The selector device of  claim 4 , wherein the selector material includes between 2 atomic-percent and 15 atomic-percent of nitrogen. 
     
     
         6 . The selector device of  claim 1 , wherein the selector material includes Ge x Te y S 1-x-y . 
     
     
         7 . The selector device of  claim 1 , wherein the selector material has a thickness between 2 nanometers and 80 nanometers. 
     
     
         8 . The selector device of  claim 1 , wherein the selector material includes sulfur and tellurium and has an atomic ratio of sulfur to tellurium that is greater than 1. 
     
     
         9 . The selector device of  claim 1 , wherein the selector device has a threshold voltage that is less than 1 volt. 
     
     
         10 . The selector device of  claim 1 , wherein the selector material includes less than 50 atomic-percent of germanium. 
     
     
         11 . A memory array, comprising:
 a memory cell, including a storage element and a selector device coupled to the storage element, wherein the selector device includes a selector material, the selector material having a glass transition temperature that is greater than 350 degrees Celsius.   
     
     
         12 . The memory array of  claim 11 , wherein the selector device includes a first electrode and a second electrode, the selector material is between the first electrode and the second electrode, and the first electrode or the second electrode is also an electrode of the storage element. 
     
     
         13 . The memory array of  claim 11 , wherein the selector material further includes a dopant. 
     
     
         14 . The memory array of  claim 11 , wherein the memory array includes a plurality of memory cells. 
     
     
         15 . The memory array of  claim 14 , wherein the plurality of memory cells is arranged in multiple decks of memory cells. 
     
     
         16 . The memory array of  claim 11 , wherein the storage element is a resistive random access memory (RRAM) device, a phase change memory (PCM) device, or a spin-transfer torque magnetic random access memory (STT-MRAM) device. 
     
     
         17 . The memory array of  claim 11 , wherein the memory cell includes a first terminal coupled to a bit line, and the memory cell includes a second terminal coupled to a word line. 
     
     
         18 - 20 . (canceled) 
     
     
         21 . A computing device, comprising:
 a circuit board; and   a die communicatively coupled to the circuit board, wherein the die includes a memory array, the memory array includes a memory cell having a storage element coupled in series with a selector device, the selector device includes a selector material, and the selector material has a glass transition temperature that is greater than 350 degrees Celsius.   
     
     
         22 . The computing device of  claim 21 , wherein the selector material includes less than 50 atomic-percent of germanium. 
     
     
         23 . The computing device of  claim 21 , wherein the selector material has an atomic ratio of sulfur to tellurium that is greater than 1. 
     
     
         24 . (canceled) 
     
     
         25 . (canceled)

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