US2022319841A1PendingUtilityA1

Deposition of low-stress carbon-containing layers

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Assignee: APPLIED MATERIALS INCPriority: Aug 7, 2020Filed: Jun 23, 2022Published: Oct 6, 2022
Est. expiryAug 7, 2040(~14 yrs left)· nominal 20-yr term from priority
Inventors:Huiyuan WangRick KustraBo QiAbhijit Basu MallickKaushik AlayavalliJay D. Pinson, Ii
H10P 14/6334H10P 14/668H10P 14/6902H10P 72/72H10P 72/0432H10P 14/6336C23C 16/5096C23C 16/52C23C 16/26C23C 16/4586C23C 16/463H01L 21/02205H01L 21/02271H01L 21/02115
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Claims

Abstract

Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.

Claims

exact text as granted — not AI-modified
1 . A semiconductor processing method comprising:
 providing a substrate in a substrate processing region of a substrate processing chamber, wherein the substrate is maintained at a temperature less than or about 50° C.;   flowing a hydrocarbon-containing precursor into the substrate processing region of the substrate processing chamber;   generating a plasma from the hydrocarbon-containing precursor; and   depositing a carbon-containing material from the plasma on the substrate.   
     
     
         2 . The semiconductor processing method of  claim 1 , wherein the hydrocarbon-containing precursor is flowed at a flow rate of less than or about 50 sccm. 
     
     
         3 . The semiconductor processing method of  claim 1 , further comprising:
 flowing an inert precursor into the substrate processing region of the substrate processing chamber, wherein the inert precursor is flowed at a flow rate of more than or about 1000 sccm.   
     
     
         4 . The semiconductor processing method of  claim 1 , wherein the substrate processing chamber is maintained at a pressure of less than or about 100 mTorr. 
     
     
         5 . The semiconductor processing method of  claim 1 , wherein the carbon-containing material is deposited at an average thickness greater than or about 10 Å. 
     
     
         6 . The semiconductor processing method of  claim 1 , wherein the hydrocarbon-containing precursor comprises acetylene. 
     
     
         7 . The semiconductor processing method of  claim 1 , further comprising:
 flowing an inert precursor into the substrate processing region of the substrate processing chamber, wherein the inert precursor comprises at least one of helium or argon.   
     
     
         8 . The semiconductor processing method of  claim 1 , wherein the plasma is a bias plasma formed at a bias power greater than 2000 Watts. 
     
     
         9 . The semiconductor processing method of  claim 1 , wherein the carbon-containing material is characterized by an as-deposited stress that is less than or about − 1 500 MPa. 
     
     
         10 . A semiconductor processing method comprising:
 providing a substrate in a substrate processing region of a substrate processing chamber, wherein the substrate is maintained at a temperature less than or about 50° C.;   generating a plasma from a deposition precursor comprising a hydrocarbon-containing precursor in the substrate processing region of the substrate processing chamber, wherein the plasma is a bias plasma generated at a bias power of greater than or about 3000 W, wherein the deposition precursor further comprises an inert precursor; and   depositing a carbon-containing material from the plasma on the substrate.   
     
     
         11 . The semiconductor processing method of  claim 10 , wherein the bias power is greater than or about 4000 Watts. 
     
     
         12 . The semiconductor processing method of  claim 10 , wherein the bias power is delivered at an operating frequency less than or about 13.56 MHz. 
     
     
         13 . The semiconductor processing method of  claim 10 , wherein the carbon-containing material comprises less than or about 25 mol % hydrogen. 
     
     
         14 . The semiconductor processing method of  claim 10 , wherein a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor is greater than or about 10:1. 
     
     
         15 . A semiconductor processing method comprising:
 generating a plasma from a hydrocarbon-containing precursor an inert precursor comprising at least one of helium or argon in a substrate processing region of a substrate processing chamber; and   depositing a carbon-containing material from the plasma on a substrate in the substrate processing region of the substrate processing chamber, wherein the carbon-containing material is characterized by an as-deposited stress that is less than or about −500 MPa.   
     
     
         16 . The semiconductor processing method of  claim 15 , wherein the substrate is maintained at a temperature less than or about 50° C. 
     
     
         17 . The semiconductor processing method of  claim 15 , wherein a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor is greater than or about 10:1. 
     
     
         18 . The semiconductor processing method of  claim 15 , wherein the carbon-containing material comprises greater than or about 60% carbon atoms with sp 3  hybridized bonds. 
     
     
         19 . The semiconductor processing method of  claim 15 , wherein the carbon-containing material comprises less than or about 25 mol % hydrogen. 
     
     
         20 . The semiconductor processing method of  claim 15 , wherein the carbon-containing material comprises a diamond-like carbon.

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