Substrate processing apparatus, method of processing substrate, and method of manufacturing semiconductor device

Abstract

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a substrate retainer configured to support a substrate;   a tubular part having a process chamber configured to accommodate the substrate retainer, the tubular part comprising:
 a discharge part configured to discharge a fluid in the process chamber to an outside thereof; and 
 a supply part configured to supply a process gas capable of processing the substrate into the process chamber and disposed at a position different from the discharge part; 
   a nozzle chamber configured to communicate with the process chamber through the supply part;   a plurality of nozzles arranged in the nozzle chamber in a circumferential direction and comprising:
 a first nozzle extending in an axial direction and provided with, on a side surface thereof, a plurality of first ejection holes configured to eject the process gas flowing in the first nozzle into the process chamber through the supply part; 
 a second nozzle extending in the axial direction and provided with, on a side surface thereof, a plurality of second ejection holes configured to eject the process gas flowing in the second nozzle into the process chamber through the supply part; and 
 a third nozzle extending in the axial direction and provided with, on a side surface thereof, a plurality of third ejection holes configured to eject the process gas flowing in the third nozzle into the process chamber through the supply part; and 
   a plurality of gas supply pipes through which the plurality of nozzles communicate with a plurality of gas supply sources, respectively, wherein   the process gas comprises a first gas, a second gas and a third gas, wherein at least one of the first gas and the second gas comprises an element constituting a film formed on the substrate,   the first nozzle comprises two gas nozzles, one of which is configured to eject the first gas and the other of which is configured to eject the third gas,   the second nozzle is provided between the two gas nozzles of the first nozzle such that the third gas is supplied while the first gas is being ejected through the first nozzle and the second gas is supplied while the first gas is not being ejected through the first nozzle,   the third nozzle comprises two gas nozzles provided adjacent to each of the two gas nozzles of the first nozzle, respectively, and one of which is configured to eject the third gas, and   a supply amount or a flow rate of the third gas ejected through the plurality of first ejection holes or the plurality of third ejection holes is less than that of the second gas ejected through the plurality of second ejection holes.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the second nozzle is interposed between the two gas nozzles of the third nozzle in the circumferential direction, and
 one of the two gas nozzles of the first nozzle is disposed opposite to the second nozzle in a manner that one of the two gas nozzles of the third nozzle is interposed therebetween.   
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the second nozzle is interposed between the two gas nozzles of the third nozzle in the circumferential direction, and
 one of the two gas nozzles of the first nozzle is disposed opposite to the second nozzle in a manner that one of the two gas nozzles of the third nozzle is interposed therebetween, and the other of the two gas nozzles of the first nozzle is disposed opposite to the second nozzle in a manner that the other of the two gas nozzles of the third nozzle is interposed therebetween.   
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the two gas nozzles of the third nozzle are configured to be supplied with the third gas at the same time through one or more of the gas supply pipes and eject the third gas, and
 wherein the two gas nozzles of the first nozzle are configured to be supplied with the first gas at the same time through one or more of the gas supply pipes and eject the third gas.   
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the supply part comprises:
 one or more first supply holes communicating between the plurality of first ejection holes and the process chamber;   one or more second supply holes communicating between the plurality of second ejection holes and the process chamber; and   one or more third supply holes communicating between the plurality of third ejection holes and the process chamber,   wherein the one or more first supply holes, the one or more second supply holes, and the one or more third supply holes are distributed over a substrate arrangement region wherein a plurality of substrates including the substrate are disposed.   
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the nozzle chamber comprises a first nozzle chamber, a second nozzle chamber and a third nozzle chamber, consecutively disposed in the circumferential direction at an outer circumference side of the tubular part,
 the second nozzle is disposed in the second nozzle chamber,   the first nozzle is disposed in each of the first nozzle chamber and the third nozzle chamber, and   the third nozzle is disposed either at both sides of the second nozzle in the second nozzle chamber or in each of the first nozzle chamber and the third nozzle chamber.   
     
     
         7 . The substrate processing apparatus of  claim 1 , wherein an ejection time period during which the third gas is ejected through either the first nozzle or the third nozzle at least partly overlaps with an ejection time period during which the second gas is ejected through the second nozzle, and
 the first ejection holes of the first nozzle, the second ejection holes of the second nozzle and the third ejection holes of the third nozzle are open toward a center of the substrate or parallel to one another.   
     
     
         8 . The substrate processing apparatus of  claim 1 , wherein the first nozzle is further configured to intermittently eject the third gas, in a state where neither of the first gas and the second gas is being supplied into the process chamber. 
     
     
         9 . The substrate processing apparatus of  claim 1 , wherein a region where the first ejection holes of the first nozzle and the second ejection holes of the second nozzle are formed covers a substrate arrangement region wherein a plurality of substrates including the substrate are disposed, and
 the third nozzle is provided with the third ejection holes disposed at least one of an upper portion and a lower portion of the substrate arrangement region without any third ejection hole being disposed at a center portion between the upper portion and the lower portion of the substrate arrangement region.   
     
     
         10 . The substrate processing apparatus of  claim 1 , wherein the first nozzle is provided with the plurality of first ejection holes corresponding to a plurality of substrates including the substrate,
 the second nozzle is provided with the plurality of second ejection holes corresponding to the plurality of substrates,   the supply part comprises: a plurality of first supply holes, each of which is formed between corresponding one of the first ejection holes and corresponding one of the plurality of substrates; a plurality of second supply holes, each of which is formed between corresponding one of the second ejection holes and corresponding one of the plurality of substrates; and a plurality of third supply holes, each of which is formed between corresponding one of the first ejection holes and corresponding one of the plurality of substrates, and at least one of the plurality of first supply holes, the plurality of second supply holes and the plurality of third supply holes are horizontal slits extending in a horizontal direction.   
     
     
         11 . A method of processing a substrate, comprising:
 providing the substrate processing apparatus of  claim 1 ; and   processing the substrate by performing:
 (a) ejecting the second gas into the process chamber through the second nozzle while ejecting the third gas into the process chamber through the first or the third nozzle; and 
 (b) ejecting the first gas into the process chamber through the first nozzle. 
   
     
     
         12 . A substrate processing apparatus comprising:
 a substrate retainer configured to support a substrate;   a tubular part having a process chamber configured to accommodate the substrate retainer, the tubular part comprising:
 a discharge part configured to discharge a fluid in the process chamber to an outside thereof; and 
 a supply part configured to supply a process gas capable of processing the substrate into the process chamber and disposed at a position different from the discharge part; 
   a nozzle chamber configured to communicate with the process chamber through the supply part;   a plurality of nozzles arranged in the nozzle chamber in a circumferential direction and comprising:
 a first nozzle extending in an axial direction and provided with, on a side surface thereof, a plurality of first ejection holes configured to eject the process gas flowing in the first nozzle into the process chamber through the supply part; 
 a second nozzle extending in the axial direction and provided with, on a side surface thereof, one or more second ejection holes configured to eject the process gas flowing in the second nozzle into the process chamber through the supply part; and 
 a third nozzle extending in the axial direction and provided with, on a side surface thereof, a plurality of third ejection holes configured to eject the process gas flowing in the third nozzle into the process chamber through the supply part; and 
   a plurality of gas supply pipes through which the plurality of the nozzles communicate with a plurality of gas supply sources, respectively, wherein   the process gas comprises a first gas, a second gas and a third gas, wherein at least one of the first gas and the second gas comprises an element constituting a film formed on the substrate,   the first nozzle comprises two gas nozzles, one of which is configured to eject the first gas and the other of which is configured to eject the third gas,   the second nozzle is provided between the two gas nozzles of the first nozzle and configured to eject the second gas, and   the third nozzle comprises two gas nozzles provided adjacent to each of the two gas nozzles of the first nozzle, respectively, and configured to eject the third gas through the plurality of third ejection holes disposed at least one of an upper portion and a lower portion of a substrate arrangement region such that surpluses of the first gas or the second gas is diluted or purged.   
     
     
         13 . The substrate processing apparatus of  claim 12 , wherein the one or more second ejection holes of the second nozzle are distributed over the substrate arrangement region. 
     
     
         14 . The substrate processing apparatus of  claim 12 , wherein the second nozzle extends upward and bends in a radial direction of the tubular part, and
 a distance from a center of the process chamber to one of the one or more second ejection holes of the second nozzle is substantially equal to a radius of an inner circumferential surface of the tubular part.   
     
     
         15 . A method of manufacturing a semiconductor device, comprising:
 providing the substrate processing apparatus of  claim 12 ; and   processing the substrate by performing:
 (a) ejecting the second gas into the process chamber through the second nozzle while ejecting the third gas into the process chamber through the first or the third nozzle; and 
 (b) ejecting the first gas into the process chamber through the first nozzle. 
   
     
     
         16 . A substrate processing apparatus comprising:
 a substrate retainer configured to support a substrate;   a tubular part having a process chamber configured to accommodate the substrate retainer, the tubular part comprising:
 a discharge part configured to discharge a fluid in the process chamber to an outside thereof; and 
 a supply part configured to supply a process gas capable of processing the substrate into the process chamber and disposed at a position different from the discharge part; 
   a nozzle chamber configured to communicate with the process chamber through the supply part;   a plurality of nozzles arranged in the nozzle chamber in a circumferential direction and comprising:
 a first nozzle extending in an axial direction and provided with, on a side surface thereof, a plurality of first ejection holes configured to eject the process gas flowing in the first nozzle into the process chamber through one or more first supply holes; 
 a second nozzle extending in the axial direction and provided with, on a side surface thereof, a plurality of second ejection holes configured to eject the process gas flowing in the second nozzle into the process chamber through one or more second supply holes; and 
 a third nozzle extending in the axial direction and provided with, on a side surface thereof, a plurality of third ejection holes configured to eject the process gas flowing in the third nozzle into the process chamber through one or more third supply holes; 
   a plurality of gas supply pipes through which the plurality of the nozzles communicate with a plurality of gas supply sources, respectively; and   a controller;   wherein the process gas comprises a first gas, a second gas, and a third gas, wherein at least one of the first gas and the second gas comprises an element constituting a film formed on the substrate,   the first nozzle comprises two gas nozzles, each of which is configured to eject the third gas,   the second nozzle is provided in the axial direction of the tubular part and between the two gas nozzles of the first nozzle, the second nozzle configured to eject the second gas,   the third nozzle is provided adjacent to one of the two gas nozzles of the first nozzle and configured to eject the third gas, and   the controller is configured to control a flow rate or a flow velocity of the second gas ejected from the plurality of the second ejection holes of the second nozzle and a flow rate or a flow velocity of the third gas ejected from at least either one of the plurality of the first ejection holes of the first nozzle and the plurality of the third ejection holes of the third nozzle, such that the second gas ejected out of the nozzle chamber through the one or more second supply holes is prevented from flowing back into the nozzle chamber.   
     
     
         17 . The substrate processing apparatus of  claim 16 , wherein at least one of the two gas nozzles of the first nozzle are further configured to eject the third gas,
 wherein the controller is further configured to control a thickness of the film formed on the substrate to have either a convex distribution or a concave distribution by controlling the flow rate or the flow velocity of the third gas exhausted both through the plurality of first ejection holes and the plurality of third ejection holes while the second gas is being ejected through the second nozzle.   
     
     
         18 . The substrate processing apparatus of  claim 16 , wherein the second nozzle is provided with the second ejection holes disposed along a substrate arrangement region where the substrate is arranged in the process chamber, and
 the third nozzle is provided with the third ejection holes disposed at least one of an upper portion and a lower portion of the substrate arrangement region without any third ejection hole being disposed at a center portion between the upper portion and the lower portion of the substrate arrangement region.   
     
     
         19 . A method of processing a substrate, comprising:
 providing the substrate processing apparatus of  claim 16 ; and   processing the substrate by performing:
 (a) ejecting the second gas into the process chamber through the second nozzle while ejecting the third gas into the process chamber through the first or the third nozzle; and 
 (b) ejecting the first gas into the process chamber through the first nozzle. 
   
     
     
         20 . A method of manufacturing a semiconductor device, comprising the method of  claim 19 .