Semiconductor chamber coatings and processes

Abstract

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

What is claimed is: 
     
         1 . A semiconductor chamber component comprising:
 an aluminum alloy comprising nickel and characterized by a surface, wherein the surface includes a corrosion resistant coating comprising:
 a conformal layer extending about the semiconductor chamber component, and 
 a non-metal oxide layer which extends over a surface of the conformal layer, wherein the non-metal oxide layer is characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV, and wherein the non-metal oxide layer is characterized by an sp 2  to sp 3  hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %. 
   
     
     
         2 . The semiconductor chamber component of  claim 1 , wherein the non-metal oxide layer comprises diamond-like carbon, silicon carbide, or parylene. 
     
     
         3 . The semiconductor chamber component of  claim 1 , wherein the surface defines one or more apertures, and wherein the conformal layer extends conformally through each of the one or more apertures. 
     
     
         4 . The semiconductor chamber component of  claim 1 , wherein the conformal layer comprises electroless plated nickel, Newton's metal, or barium titanate. 
     
     
         5 . The semiconductor chamber component of  claim 1 , wherein the surface of the conformal layer is characterized by a surface roughness of from about 29 Sa to about 30 Sa, of from about 1 Sv to about 1000 Sv, and of from about 0.001 Sdr to about 10 Sdr, and wherein the conformal layer comprises a phosphorus content of from about 5 wt. % to about 20 wt. %. 
     
     
         6 . The semiconductor chamber component of  claim 1 , wherein the surface is textured to a depth of at least about 1 μm. 
     
     
         7 . The semiconductor chamber component of  claim 1 , wherein the corrosion resistant coating is characterized by a thickness of from about 100 nm to about 200 μm. 
     
     
         8 . A method for coating a component of a semiconductor processing chamber, the method comprising:
 positioning a component having an exposed surface within a chamber;   depositing a conformal layer about the exposed surface of the component, wherein the conformal layer is characterized by an exposed surface opposite a surface in contact with the component;   preparing the exposed surface of the conformal layer, wherein preparing the exposed surface of the conformal layer comprises:
 flowing an argon-containing precursor into a processing region of the semiconductor processing chamber, 
 forming a plasma from the argon-containing precursor to produce plasma effluents, and 
 contacting the surface of the conformal layer with the plasma effluents; and 
   depositing a non-metal oxide layer over the surface of the conformal layer, wherein the non-metal oxide layer is characterized by an amorphous microstructure.   
     
     
         9 . The method of  claim 8 , wherein the exposed surface of the component comprises an aluminum alloy including nickel. 
     
     
         10 . The method of  claim 8 , wherein the non-metal oxide comprises diamond-like carbon, silicon carbide, or parylene. 
     
     
         11 . The method of  claim 8 , wherein the component comprises one or more apertures and wherein the conformal layer extends conformally through each of the one or more apertures. 
     
     
         12 . The method of  claim 8 , wherein the conformal layer comprises electroless plated nickel, Newton's metal, or barium titanate. 
     
     
         13 . The method of  claim 8 , wherein preparing the exposed surface of the conformal layer comprises surface texturing the exposed surface of the conformal layer. 
     
     
         14 . The method of  claim 8  further comprising texturing the exposed surface of the component to a depth of at least about 1 μm before depositing the conformal layer. 
     
     
         15 . The method of  claim 8 , wherein the component comprises one or more of a liner, a chamber dome, a chamber wall, a cover plate, a showerhead, a puck, a pedestal, or an edge ring. 
     
     
         16 . A method for coating a component of a semiconductor processing chamber, the method comprising:
 positioning a component having an exposed surface within a chamber;   depositing a conformal layer about the exposed surface of the component;   flowing an argon-containing precursor into a processing region of the semiconductor processing chamber,   forming a plasma from the argon-containing precursor to produce plasma effluents,   contacting a surface of the conformal layer with the plasma effluents; and   depositing a top layer over the surface of the conformal layer, wherein the top layer is characterized by an amorphous microstructure.   
     
     
         17 . The method of  claim 16 , wherein a surface of the conformal layer is characterized by a surface roughness of from about 29 Sa to about 30 Sa. 
     
     
         18 . The method of  claim 16 , wherein the top layer is characterized by a hardness of from about 300 HV to about 10,000 HV. 
     
     
         19 . The method of  claim 16 , wherein the top layer is characterized by a hydrogen content of from about 1 wt. % to about 35 wt. % and a phosphorous content of from about 5 wt. % and about 20 wt. %. 
     
     
         20 . The method of  claim 16 , wherein the conformal layer comprises electroless plated nickel, Newton's metal, or barium titanate.