US2023136499A1PendingUtilityA1

Selective Passivation Of Damaged Nitride

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Assignee: APPLIED MATERIALS INCPriority: Oct 31, 2021Filed: Jun 20, 2022Published: May 4, 2023
Est. expiryOct 31, 2041(~15.3 yrs left)· nominal 20-yr term from priority
Inventors:Shumao ZhangBhaskar Jyoti BhuyanAaron DangerfieldJesus Candelario Mendoza-GutierrezLe ZhangDavid T. OrMark SalyJiang Lu
H10P 70/27H10P 14/69433H10P 14/6687H10P 14/6682H10P 14/6334H10P 72/0461H10P 50/73H10P 50/283H10P 95/00H10P 70/234H01L 21/02211H01L 21/0217H01L 21/02219H01L 21/02271H01L 21/02068
48
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Claims

Abstract

Methods for selectively depositing on self-assembled monolayer (SAM) are disclosed. Some embodiments of the disclosure utilize a precursor of a Formula (I), Formula (II), Formula (III), and Formula (IV):RnSi(NR′R″)(4-n) (III), RnSiX(4-n) (IV),wherein R1 and R2 are independently selected from substituted or unsubstituted C1-C20 alkyl, or R1 and R2 form a substituted or unsubstituted C1-C20 cycloalkyl ring, and wherein R3, R4, R5, R6, Rn are independently selected from hydrogen, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkoxy, and substituted or unsubstituted C1-C20 vinyl, X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3, to form a self-assembled monolayer (SAM) on a damaged silicon nitride layer to prevent critical dimension blow out of a feature in a silicon nitride layer substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of forming a semiconductor structure, the method comprising:
 depositing a passivation layer on a substrate, the substrate comprising a silicon nitride layer including at least one feature formed therein, the at least one feature having a first width, a top surface, a bottom surface, and at least one sidewall surface, wherein a damaged silicon nitride layer is on the top surface and on the at least one sidewall surface, and a silicon oxide layer is on the bottom surface; and   pre-cleaning the substrate to remove the damaged silicon nitride layer from the top surface and the silicon oxide layer from the bottom surface.   
     
     
         2 . The method of  claim 1 , wherein the passivation layer is deposited on the top surface, the bottom surface, and on the at least one sidewall surface. 
     
     
         3 . The method of  claim 1 , wherein the passivation layer is selectively deposited on the top surface and on the at least one sidewall surface but not on the bottom surface. 
     
     
         4 . The method of  claim 1 , wherein depositing the passivation layer comprises exposing the substrate to a precursor. 
     
     
         5 . The method of  claim 4 , wherein the precursor comprises a compound according to one or more of a Formula (I), Formula (II), Formula (III), and Formula (IV): 
       
         
           
           
               
               
           
         
       
       R n Si(NR′R″) (4-n)  (III), R n SiX (4-n)  (IV),
 wherein R 1  and R 2  are independently selected from substituted or unsubstituted C 1 -C 20  alkyl, or R 1  and R 2  form a substituted or unsubstituted C 1 -C 20  cycloalkyl ring, and 
 wherein R 3 , R 4 , R 5 , R 6 , R n  are independently selected from hydrogen, substituted or unsubstituted C 1 -C 20  alkyl, substituted or unsubstituted C 1 -C 20  alkoxy, and substituted or unsubstituted C 1 -C 20  vinyl, 
 X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3. 
 
     
     
         6 . The method of  claim 5 , wherein the precursor of Formula (I) is selected from one or more of 
       
         
           
           
               
               
           
         
       
     
     
         7 . The method of  claim 5 , wherein the precursor of Formula (II) comprises 
       
         
           
           
               
               
           
         
       
     
     
         8 . The method of  claim 1 , wherein the at least one feature comprises one or more of a trench and a via. 
     
     
         9 . The method of  claim 1 , further comprising removing the passivation layer from the at least one sidewall surface to expose the silicon nitride layer. 
     
     
         10 . The method of  claim 9 , wherein the at least one feature has a second width that is substantially the same as the first width. 
     
     
         11 . The method of  claim 10 , wherein the first width and the second width are independently in a range of from 60 to 70 Å. 
     
     
         12 . A method of forming a semiconductor structure, the method comprising:
 depositing a passivation layer on a substrate by exposing the substrate to a precursor, the substrate comprising a silicon nitride layer including at least one feature formed therein, the at least one feature having a first width, a top surface, a bottom surface, and at least one sidewall surface, wherein a damaged silicon nitride layer is on the top surface and on the at least one sidewall surface, and a silicon oxide layer is on the bottom surface; and   pre-cleaning the substrate to remove the damaged silicon nitride layer from the top surface and silicon oxide layer from the bottom surface,   wherein the precursor comprises a compound according to Formula (I) and Formula (III)   
       
         
           
           
               
               
           
         
       
       R n Si(NR′R″) (4-n)  (III),
 wherein R 1  and R 2  are independently selected from substituted or unsubstituted C 1 -C 20  alkyl, or R 1  and R 2  form a substituted or unsubstituted C 1 -C 20  cycloalkyl ring, and 
 wherein R 3 , R 4 , R 5 , and R n  are independently selected from hydrogen, substituted or unsubstituted C 1 -C 20  alkyl, substituted or unsubstituted C 1 -C 20  alkoxy, and substituted or unsubstituted C 1 -C 20  vinyl, 
 and n is an integer from 1 to 3. 
 wherein R 1  and R 2  are independently selected from substituted or unsubstituted C 1 -C 8  alkyl, or R 1  and R 2  form a substituted or unsubstituted C 1 -C 8  cycloalkyl ring, and 
 wherein R 3 , R 4 , and R 5  are independently selected from hydrogen, substituted or unsubstituted C 1 -C 8  alkyl, substituted or unsubstituted C 1 -C 8  alkoxy, and substituted or unsubstituted C 1 -C 8  vinyl. 
 
     
     
         13 . The method of  claim 12 , wherein the precursor of Formula (I) is selected from one or more of 
       
         
           
           
               
               
           
         
       
     
     
         14 . The method of  claim 12 , wherein the at least one feature comprises one or more of a trench and a via. 
     
     
         15 . The method of  claim 12 , further comprising removing the passivation layer and removing the damaged silicon nitride layer from the at least one sidewall surface to expose the silicon nitride layer. 
     
     
         16 . The method of  claim 15 , wherein the at least one feature has a second width that is substantially the same as the first width. 
     
     
         17 . The method of  claim 16 , wherein the first width and the second width are independently in a range of from 60 to 70 Å. 
     
     
         18 . A method of forming a semiconductor structure, the method comprising:
 selectively depositing a passivation layer on a substrate by exposing the substrate to a precursor, the substrate comprising a silicon nitride layer and including at least one feature formed therein, the at least one feature having a first width and having a top surface, a bottom surface, and at least one sidewall surface, wherein a damaged silicon nitride layer is on the top surface and on the at least one sidewall surface, and a silicon oxide layer is on the bottom surface; and   pre-cleaning the substrate to remove the damaged silicon nitride layer from the top surface and remove the silicon oxide layer from the bottom surface,   wherein the precursor comprises a compound according to Formula (II) and Formula (IV),   
       
         
           
           
               
               
           
         
       
       R n SiX (4-n)  (IV),
 wherein R 6  and R n  are independently selected from hydrogen, substituted or unsubstituted C 1 -C 20  alkyl, substituted or unsubstituted C 1 -C 20  alkoxy, and substituted or unsubstituted C 1 -C 20  vinyl, 
 X is a halide selected from Cl, Br, and I, and 
 n is an integer from 1 to 3. 
 
     
     
         19 . The method of  claim 18 , wherein the precursor of Formula (II) comprises 
       
         
           
           
               
               
           
         
       
     
     
         20 . The method of  claim 18 , wherein the passivation layer is selectively deposited on the top surface and on the at least one sidewall surface but not on the bottom surface. 
     
     
         21 . The method of  claim 18 , further comprising removing the passivation layer and removing the damaged silicon nitride layer from the at least one sidewall surface to expose the silicon nitride layer. 
     
     
         22 . The method of  claim 21 , wherein the at least one feature has a second width that is substantially the same as the first width. 
     
     
         23 . The method of  claim 22 , wherein the first width and the second width are independently in a range of from 60 to 70 Å.

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