Inventor · disambiguated record
David T. Or
Also filed as: OR DAVID · OR DAVID T · OR DAVID TSUENWAI
23 granted patents·10 pending applications·912 citations·filing 1997–2025
96Inventor score
Top patents by PatentIndex Score
33 records- 0198US6364949B1300 mm CVD chamber design for metal-organic thin film depositionAPPLIED MATERIALS INC·Filed 1999·Granted Apr 2, 2002·424 cites·33 claims
- 0297US8748322B1Silicon oxide recess etchAPPLIED MATERIALS INC·Filed 2013·Granted Jun 10, 2014·125 cites·19 claims
- 0394USD933725SDeposition ring for a substrate processing chamberAPPLIED MATERIALS INC·Filed 2019·Granted Oct 19, 2021·52 cites·1 claims
- 0494USD891382SProcess shield for a substrate processing chamberAPPLIED MATERIALS INC·Filed 2019·Granted Jul 28, 2020·55 cites·1 claims
- 0593US6887317B2Reduced friction lift pinAPPLIED MATERIALS INC·Filed 2002·Granted May 3, 2005·68 cites·12 claims
- 0691US7871470B2Substrate support lift mechanismAPPLIED MATERIALS INC·Filed 2006·Granted Jan 18, 2011·20 cites·6 claims
- 0788US9004006B2Process chamber lid design with built-in plasma source for short lifetime speciesKAO CHIEN-TEH·Filed 2011·Granted Apr 14, 2015·5 cites·18 claims
- 0884US5953827AMagnetron with cooling system for process chamber of processing systemAPPLIED MATERIALS INC·Filed 1997·Granted Sep 21, 1999·90 cites·23 claims
- 0983US9245769B2Directional SiO2 etch using plasma pre-treatment and high-temperature etchant depositionAPPLIED MATERIALS INC·Filed 2014·Granted Jan 26, 2016·4 cites·20 claims
- 1082US9177780B2Directional SiO2 etch using plasma pre-treatment and high-temperature etchant depositionAPPLIED MATERIALS INC·Filed 2013·Granted Nov 3, 2015·5 cites·20 claims
- 1180US11380536B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Jul 5, 2022·1 cites·18 claims
- 1280US8980761B2Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatmentAPPLIED MATERIALS INC·Filed 2013·Granted Mar 17, 2015·4 cites·20 claims
- 1379USD942516SProcess shield for a substrate processing chamberAPPLIED MATERIALS INC·Filed 2019·Granted Feb 1, 2022·17 cites·1 claims
- 1475US8252696B2Selective etching of silicon nitrideLU XINLIANG·Filed 2008·Granted Aug 28, 2012·5 cites·16 claims
- 1572USD568914SSubstrate support lift pinAPPLIED MATERIALS INC·Filed 2006·Granted May 13, 2008·19 cites·1 claims
- 1669US9653318B2Directional SiO2 etch using plasma pre-treatment and high-temperature etchant depositionAPPLIED MATERIALS INC·Filed 2016·Granted May 16, 2017·1 cites·20 claims
- 1766US11776806B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2022·Granted Oct 3, 2023·0 cites·17 claims
- 1866US9202745B2Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatmentAPPLIED MATERIALS INC·Filed 2014·Granted Dec 1, 2015·1 cites·20 claims
- 1965USD403337SHigh conductance low wall deposition upper shieldAPPLIED MATERIALS INC·Filed 1997·Granted Dec 29, 1998·13 cites·1 claims
- 2063US8721796B2Plasma cleaning apparatus and methodDEEHAN MARTIN·Filed 2009·Granted May 13, 2014·3 cites·9 claims
- 2160US2025379059A1Method of bottom reaction efficiency modulation for ald and aleAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2259US7910853B2Direct real-time monitoring and feedback control of RF plasma output for wafer processingAPPLIED MATERIALS INC·Filed 2008·Granted Mar 22, 2011·0 cites·12 claims
- 2359US2024379343A1Mitigation of first wafer effectAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2456US2024153790A1Process chamber with pressure charging and pulsing capabilityAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2554US2016133441A1Etch enhancement via controlled introduction of chamber contaminantsAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2653US9552968B2Plasma cleaning apparatus and methodAPPLIED MATERIALS INC·Filed 2014·Granted Jan 24, 2017·0 cites·15 claims
- 2751US11355391B2Method for forming a metal gapfillAPPLIED MATERIALS INC·Filed 2020·Granted Jun 7, 2022·0 cites·19 claims
- 2848US2010099263A1Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defectsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2948US2023136499A1Selective Passivation Of Damaged NitrideAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3047US2005194100A1Reduced friction lift pinAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3143US2014165911A1Apparatus for providing plasma to a process chamberAPPLIED MATERIALS INC·Filed 2012·Application pending·0 cites
- 3242US2006051966A1In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamberAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3339US2004177813A1Substrate support lift mechanismAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →