Bridge hub tiling architecture

Abstract

Systems and methods of conductively coupling at least three semiconductor dies included in a semiconductor package using a multi-die interconnect bridge that is embedded, disposed, or otherwise integrated into the semiconductor package substrate are provided. The multi-die interconnect bridge is a passive device that includes passive electronic components such as conductors, resistors, capacitors and inductors. The multi-die interconnect bridge communicably couples each of the semiconductor dies included in the at least three semiconductor dies to each of at least some of the remaining at least three semiconductor dies. The multi-die interconnect bridge occupies a first area on the surface of the semiconductor package substrate. The smallest of the at least three semiconductor dies coupled to the multi-die interconnect bridge 120 occupies a second area on the surface of the semiconductor package substrate, where the second area is greater than the first area.

What is claimed: 
     
         1 . A semiconductor package, comprising:
 a package substrate;   a multi-die interconnect bridge coupled to the package substrate;   a first die over a first portion of the package substrate and over a first portion of the multi-die interconnect bridge, the first die electrically coupled to the multi-die interconnect bridge;   a second die over a second portion of the package substrate and over a second portion of the multi-die interconnect bridge, the second die electrically coupled to the multi-die interconnect bridge;   a third die over a third portion of the package substrate and over a third portion of the multi-die interconnect bridge, the third die electrically coupled to the multi-die interconnect bridge, the third die diagonally opposed to the first die across the multi-die interconnect bridge, and the third die directly electrically connected to the first die by the multi-die interconnect bridge; and   a fourth die over a fourth portion of the package substrate and over a fourth portion of the multi-die interconnect bridge, the fourth die electrically coupled to the multi-die interconnect bridge.   
     
     
         2 . The semiconductor package of  claim 1 , wherein the first die is directly electrically connected to the second die by the multi-die interconnect bridge. 
     
     
         3 . The semiconductor package of  claim 2 , wherein the first die is directly electrically connected to the fourth die by the multi-die interconnect bridge. 
     
     
         4 . The semiconductor package of  claim 1 , wherein the fourth die is diagonally opposed to the second die across the multi-die interconnect bridge, and the fourth die is directly electrically connected to the second die by the multi-die interconnect bridge. 
     
     
         5 . The semiconductor package of  claim 1 , wherein the first die and the third die have a same size. 
     
     
         6 . The semiconductor package of  claim 1 , wherein the first die and the third die have different sizes from one another. 
     
     
         7 . The semiconductor package of  claim 1 , wherein the first die, the second die, the third die and the fourth die all have a same size. 
     
     
         8 . The semiconductor package of  claim 1 , wherein the first die, the second die, the third die and the fourth die have different sizes from one another. 
     
     
         9 . The semiconductor package of  claim 1 , further comprising:
 a second multi-die interconnect bridge coupled to the package substrate, the second multi-die interconnect bridge coupled to the first die and the second die.   
     
     
         10 . The semiconductor package of  claim 1 , wherein the first die, the second die, the third die and the fourth die are coupled to a first side of the package substrate, the semiconductor package further comprising:
 a plurality of bumps coupled to a second side of the package substrate, the second side opposite the first side.   
     
     
         11 . A method of fabricating a semiconductor package, the method comprising:
 coupling a multi-die interconnect bridge to a package substrate;   electrically coupling a first die to the multi-die interconnect bridge, the first die over a first portion of the package substrate and over a first portion of the multi-die interconnect bridge;   electrically coupling a first die to the multi-die interconnect bridge, the second die over a second portion of the package substrate and over a second portion of the multi-die interconnect bridge;   electrically coupling a first die to the multi-die interconnect bridge, the third die over a third portion of the package substrate and over a third portion of the multi-die interconnect bridge, the third die diagonally opposed to the first die across the multi-die interconnect bridge, and the third die directly electrically connected to the first die by the multi-die interconnect bridge; and   electrically coupling a first die to the multi-die interconnect bridge, the fourth die over a fourth portion of the package substrate and over a fourth portion of the multi-die interconnect bridge.   
     
     
         12 . The method of  claim 11 , wherein the first die is directly electrically connected to the second die by the multi-die interconnect bridge. 
     
     
         13 . The method of  claim 12 , wherein the first die is directly electrically connected to the fourth die by the multi-die interconnect bridge. 
     
     
         14 . The method of  claim 11 , wherein the fourth die is diagonally opposed to the second die across the multi-die interconnect bridge, and the fourth die is directly electrically connected to the second die by the multi-die interconnect bridge. 
     
     
         15 . The method of  claim 11 , further comprising:
 coupling a second multi-die interconnect bridge to the package substrate, the second multi-die interconnect bridge coupled to the first die and the second die.   
     
     
         16 . The method of  claim 11 , wherein the first die, the second die, the third die and the fourth die are coupled to a first side of the package substrate, the method further comprising:
 coupling a plurality of bumps to a second side of the package substrate, the second side opposite the first side.   
     
     
         17 . An electronic device, comprising:
 a printed circuit board; and   a semiconductor package coupled to the circuit board, the semiconductor package comprising”
 a package substrate; 
 a multi-die interconnect bridge coupled to the package substrate; 
 a first die over a first portion of the package substrate and over a first portion of the multi-die interconnect bridge, the first die electrically coupled to the multi-die interconnect bridge; 
 a second die over a second portion of the package substrate and over a second portion of the multi-die interconnect bridge, the second die electrically coupled to the multi-die interconnect bridge; 
 a third die over a third portion of the package substrate and over a third portion of the multi-die interconnect bridge, the third die electrically coupled to the multi-die interconnect bridge, the third die diagonally opposed to the first die across the multi-die interconnect bridge, and the third die directly electrically connected to the first die by the multi-die interconnect bridge; 
 a fourth die over a fourth portion of the package substrate and over a fourth portion of the multi-die interconnect bridge, the fourth die electrically coupled to the multi-die interconnect bridge, wherein the first die, the second die, the third die and the fourth die are coupled to a first side of the package substrate; and 
 a plurality of bumps coupled to a second side of the package substrate, the second side opposite the first side, the plurality of bumps electrically coupled to the printed circuit board. 
   
     
     
         18 . The electronic device of  claim 17 , wherein the first die is directly electrically connected to the second die by the multi-die interconnect bridge. 
     
     
         19 . The electronic device of  claim 18 , wherein the first die is directly electrically connected to the fourth die by the multi-die interconnect bridge. 
     
     
         20 . The electronic device of  claim 17 , wherein the fourth die is diagonally opposed to the second die across the multi-die interconnect bridge, and the fourth die is directly electrically connected to the second die by the multi-die interconnect bridge.