Multi-chip modules formed using wafer-level processing of a reconstituted wafer

Abstract

Apparatuses and methods are described. This apparatus includes a bridge die having first contacts on a die surface being in a molding layer of a reconstituted wafer. The reconstituted wafer has a wafer surface including a layer surface of the molding layer and the die surface. A redistribution layer on the wafer surface includes electrically conductive and dielectric layers to provide conductive routing and conductors. The conductors extend away from the die surface and are respectively coupled to the first contacts at bottom ends thereof. At least second and third IC dies respectively having second contacts on corresponding die surfaces thereof are interconnected to the bridge die and the redistribution layer. A first portion of the second contacts are interconnected to top ends of the conductors opposite the bottom ends thereof in part for alignment of the at least second and third IC dies to the bridge die.

What is claimed is: 
     
         1 . An apparatus, comprising:
 a first die at least partially surrounded by a first insulating material, a pad layer disposed over the first die and including at least one contact;   a second die with a second insulating material along at least one side surface of the second die, the second die directly bonded to the first die by way of a direct bonded interconnect, the second die including at least one contact directly bonded and in contact with the at least one contact of the pad layer without an intervening solder ball; and   at least one conductor through the first insulating material, the at least one conductor being in contact with the second die.   
     
     
         2 . The apparatus according to  claim 1 , wherein the first die is a bridging die between the second die and a third die in a reconstituted form. 
     
     
         3 . The apparatus according to  claim 1 , wherein the second die and a third die partially overlap a facing surface of the first die. 
     
     
         4 . The apparatus according to  claim 1 , wherein the at least one conductor is a through-insulator via. 
     
     
         5 . The apparatus according to  claim 1 , wherein a redistribution layer couples the at least one conductor for electrical conductivity with the second die. 
     
     
         6 . The apparatus according to  claim 1 , wherein the second die comprises fine-pitch contacts. 
     
     
         7 . The apparatus according to  claim 6 , wherein the fine-pitch contacts have a pitch of less than 20 microns. 
     
     
         8 . The apparatus according to  claim 6 , wherein the fine-pitch contacts have a pitch of less than 10 microns. 
     
     
         9 . The apparatus according to  claim 12 , wherein the first insulating material comprises a molding material. 
     
     
         10 . The apparatus according to  claim 12 , wherein the at least one conductor comprises a via through the first insulating material. 
     
     
         11 . The apparatus according to  claim 10 , wherein the first insulating material comprises an encapsulating material and the via extends through the encapsulating material. 
     
     
         12 . An apparatus comprising:
 a first die at least partially surrounded by an insulating layer;   a second die adjacent to the first die; and   an active bridge die coupling the second die with the first die, and the active bridge die comprising active circuitry.   
     
     
         13 . The apparatus of  claim 12 , wherein the active bridge die is coupled to the first die via direct bond interconnect (DBI) and the active bridge die is coupled to the second die via DBI. 
     
     
         14 . The apparatus of  claim 12 , wherein the second die is at least partially surrounded by the insulating layer. 
     
     
         15 . The apparatus of  claim 12 , wherein the active bridge die is at least partially surrounded by an additional insulating layer. 
     
     
         16 . The apparatus of  claim 15 , further comprising at least one conductor through the additional insulating layer, the at least one conductor being in contact with the first die or the second die. 
     
     
         17 . The apparatus of  claim 16 , wherein a redistribution layer couples the at least one conductor for electrical conductivity with the first die or the second die. 
     
     
         18 . The apparatus of  claim 16 , wherein the at least one conductor is a through-insulator via. 
     
     
         19 . The apparatus of  claim 12 , wherein the first die and the second die partially overlap a facing surface of the active bridge die. 
     
     
         20 . The apparatus of  claim 12 , wherein the first die or the second die comprises fine-pitch contacts. 
     
     
         21 . The apparatus of  claim 12 , wherein the insulating layer comprises a molding material. 
     
     
         22 . An apparatus comprising:
 a first die;   a second die adjacent to the first die; and   an active bridge die coupling the second die with the first die, and the active bridge die comprising active circuitry configured to actively perform at least one function,   wherein the active bridge die is coupled to the first die via direct bond interconnect (DBI) and the active bridge die is coupled to the second die via DBI.   
     
     
         23 . The apparatus of  claim 22 , wherein the first die is at least partially surrounded by a molding layer. 
     
     
         24 . The apparatus of  claim 22 , wherein the second die is at least partially surrounded by an insulating layer. 
     
     
         25 . The apparatus of  claim 22 , wherein the active bridge die is at least partially surrounded by an additional insulating layer. 
     
     
         26 . The apparatus of  claim 25 , further comprising at least one conductor through the additional insulating layer, the at least one conductor being in contact with the first die or the second die. 
     
     
         27 . The apparatus of  claim 26 , wherein a redistribution layer couples the at least one conductor for electrical conductivity with the first die or the second die. 
     
     
         28 . The apparatus of  claim 26 , wherein the at least one conductor is a through-mold via. 
     
     
         29 . The apparatus of  claim 22 , wherein the first die and the second die partially overlap a facing surface of the active bridge die. 
     
     
         30 . The apparatus of  claim 22 , wherein the first die or the second die comprises fine-pitch contacts.