US2024047192A1PendingUtilityA1

Manufacturing method of diamond composite wafer

Assignee: ND HI TECH LAB INCPriority: Aug 8, 2022Filed: Aug 8, 2023Published: Feb 8, 2024
Est. expiryAug 8, 2042(~16.1 yrs left)· nominal 20-yr term from priority
H10W 80/00H10W 90/288H10W 90/297H10W 90/722H10W 90/295H10W 46/301H10W 90/00H10W 46/00H10W 20/20H10W 40/47H10W 40/22H10W 40/254H10W 74/117H10W 74/473H10W 74/43H10W 74/019H10W 95/00H10P 90/12H10P 72/7402H10W 90/794H10W 90/792H10W 80/327H10W 80/312H10W 80/211H10W 72/953H10W 72/952H10W 74/481H10W 74/141H10W 74/017H10P 72/7432H10P 72/7426H10P 90/1914H10P 70/20H10P 90/00H10P 72/74H10D 62/8303H10D 62/117H10W 99/00H10W 72/90H01L 21/02008H01L 21/6836B81B 7/02B81B 7/0093B81C 3/001
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Claims

Abstract

A method to process a diamond composite wafer includes the following steps: (a). forming a plurality of through vias in the diamond composite wafer and a first re-distribution layer on a firs side of the diamond composite wafer; (b). attaching a temporary carrier to the first re-distribution layer, and forming a second re-distribution layer on a second side of the diamond composite wafer; and (c). releasing the temporary carrier to form a circuit containing diamond composite wafer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method to process a diamond composite wafer, comprising:
 (a) forming a plurality of through vias in the diamond composite wafer and a first re-distribution layer on a firs side of the diamond composite wafer;   (b) attaching a temporary carrier to the first re-distribution layer, and forming a second re-distribution layer on a second side of the diamond composite wafer;   (c) releasing the temporary carrier to form a circuit containing diamond composite wafer.   
     
     
         2 . The method in  claim 1 , wherein the diamond composite wafer comprises a semiconductor substrate with a predetermined diameter and a plurality of diamond blocks on the semiconductor substrate. 
     
     
         3 . The method in  claim 2 , wherein the semiconductor substrate comprises a plurality of semiconductor blocks consolidated into the predetermined diameter. 
     
     
         4 . The method in  claim 2 , further comprising: forming a plurality of IC circuits in the semiconductor substrate. 
     
     
         5 . The method in  claim 2 , wherein the first re-distribution layer is formed on the semiconductor substrate, and the second re-distribution layer is formed on the plurality of diamond blocks. 
     
     
         6 . The method in  claim 2 , further comprising:
 dicing the circuit containing diamond composite wafer into a plurality of circuit containing composite block, each circuit containing composite block comprising one of the diamond blocks and a semiconductor block diced from the semiconductor substrate.   
     
     
         7 . The method in  claim 1 , wherein each of the plurality of through vias comprises an electrical via, an optical via, a thermal via and/or a fluidic via. 
     
     
         8 . The method in  claim 1 , wherein the first re-distribution layer and/or the second re-distribution layer comprises an electrical interconnection or an optical waveguide. 
     
     
         9 . The method in  claim 1 , wherein the diamond composite wafer comprises a first semiconductor substrate with a predetermined diameter, a plurality of diamond blocks on the first semiconductor substrate, and a second semiconductor substrate with the predetermined diameter on the first semiconductor substrate. 
     
     
         10 . The method in  claim 9 , wherein the first re-distribution layer is formed on the first semiconductor substrate, and the second re-distribution layer is formed on the second semiconductor substrate. 
     
     
         11 . The method in  claim 9 , further comprising:
 dicing the circuit containing diamond composite wafer into a plurality of circuit containing composite block, each circuit containing composite block comprising one of the diamond blocks, a first semiconductor block diced from the first semiconductor substrate, and a second semiconductor block diced from the second semiconductor substrate.   
     
     
         12 . The method in  claim 1 , wherein the diamond composite wafer comprises a plurality of diamond blocks consolidated into a predetermined diameter. 
     
     
         13 . The method in  claim 12 , wherein the first re-distribution layer and the second re-distribution layer are formed on different sides of the plurality of diamond blocks consolidated with the predetermined diameter. 
     
     
         14 . The method in  claim 12 , further comprising:
 dicing the circuit containing diamond composite wafer into a plurality of circuit containing composite block, each circuit containing composite block comprising one of the diamond blocks.

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