Semiconductor structure

Abstract

A semiconductor structure includes a substrate and a first circuit containing composite block over the substrate. The first circuit containing composite block includes a through via therein and a re-distribution layer thereon. The first circuit containing composite block includes a semiconductor block and a diamond block.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a substrate; and   a first circuit containing composite block over the substrate;   wherein the first circuit containing composite block comprises a through via therein and a re-distribution layer thereon; and   wherein the first circuit containing composite block comprises a semiconductor block and a diamond block.   
     
     
         2 . The semiconductor structure in  claim 1 , further comprising a second circuit containing composite block under the first circuit containing composite block;
 wherein the second circuit containing composite block comprises a through via therein and a re-distribution layer thereon; and   wherein the second circuit containing composite block comprises a semiconductor block and/or a diamond block.   
     
     
         3 . The semiconductor structure in  claim 2 , wherein the first circuit containing composite block or the second circuit containing composite block further comprises a plurality of IC circuits. 
     
     
         4 . The semiconductor structure in  claim 1 , wherein the through via is an electrical via, an optical via, a thermal via or a fluidic via. 
     
     
         5 . The method in  claim 1 , wherein the re-distribution layer comprises an electrical interconnection or an optical waveguide. 
     
     
         6 . A semiconductor structure, comprising:
 a substrate;   a first circuit containing composite block over the substrate;   wherein the first circuit containing composite block comprises a first semiconductor block and a first diamond block, the first circuit containing composite block comprises a first through via therein, and a first set of IC circuit in the first semiconductor block; and   a cold plate bonded to the first circuit containing composite block.   
     
     
         7 . The semiconductor structure in  claim 6 , further comprising an interposer above the substrate and under the first circuit containing composite block, wherein the interposer comprises a fluidic via. 
     
     
         8 . The semiconductor structure in  claim 7 , further comprising a second circuit containing composite block bonded to the first circuit containing composite block; wherein the second circuit containing composite block comprises a second semiconductor block and a second diamond block, and the second circuit containing composite block comprises a second through via therein. 
     
     
         9 . The semiconductor structure in  claim 8 , wherein a diamond layer is between the cold plate and the first circuit containing composite block. 
     
     
         10 . The semiconductor structure in  claim 8 , further comprising a structural member surrounding the first circuit containing composite block and the second circuit containing composite block, wherein the structural member comprises a fluidic channel fluidly coupled to the fluidic via of the interposer. 
     
     
         11 . The semiconductor structure in  claim 10 , further comprising a micro-jet coupled to the first circuit containing composite block. 
     
     
         12 . The semiconductor structure in  claim 10 , further comprising a dielectric liquid coolant filled between the structural member and the first circuit containing composite block. 
     
     
         13 . The semiconductor structure in  claim 11 , wherein the second circuit containing composite block bonded to the first circuit containing composite block through oxide-to-oxide bonding or polyimide (PI)-to-PI bonding. 
     
     
         14 . A semiconductor structure, comprising:
 a substrate;   a first semiconductor block over the substrate, wherein the first semiconductor block comprises a first set of IC circuit;   a second semiconductor block bonded to the first semiconductor block, wherein the second semiconductor block comprises a second set of IC circuit; and   an interposer above the substrate and under the second semiconductor block, wherein the interposer comprises a fluidic via.   
     
     
         15 . The semiconductor structure in  claim 14 , further comprising a cold plate bonded to the first semiconductor block. 
     
     
         16 . A semiconductor structure, comprising:
 a substrate;   a first semiconductor block over the substrate, wherein the first semiconductor block comprises a first set of IC circuit and a first fluidic channel; and   a second semiconductor block bonded to the first semiconductor block, wherein the second semiconductor block comprises a second set of IC circuit and a second fluidic channel.   
     
     
         17 . The semiconductor structure in  claim 16 , further comprising a cold plate bonded to the first semiconductor block. 
     
     
         18 . A semiconductor structure, comprising:
 a substrate;   a first circuit containing composite block over the substrate, wherein the first circuit containing composite block comprises a first semiconductor block and a first diamond block, and the first circuit containing composite block comprises a first through via therein, and a first set of IC circuit in the first semiconductor block;   a second circuit containing composite block bonded to the first circuit containing composite block; wherein the second circuit containing composite block comprises a second semiconductor block and a second diamond block, the second circuit containing composite block comprises a second through via therein, and a second set of IC circuit in the second semiconductor block; and   an interposer above the substrate and under the second circuit containing composite block, wherein the interposer comprises a third semiconductor block and a third diamond block, the interposer comprises a third through via therein, and a re-distribution layer thereon;   wherein the re-distribution layer is electrically or optically coupled to the second circuit containing composite block.   
     
     
         19 . The semiconductor structure in  claim 18 , further comprising a structural member surrounding the first circuit containing composite block and the second circuit containing composite block. 
     
     
         20 . The semiconductor structure in  claim 19 , further comprising a lid joined to the semiconductor structural member. 
     
     
         21 . The semiconductor structure in  claim 20 , further comprising a diamond layer between the lid and the first circuit containing composite block.