Polishing articles for hybrid bonding applications

Abstract

Printable resin precursor compositions and polishing articles including printable resin precursors are provided that are particularly suited for polishing substrates utilized in hybrid bonding applications. Methods and articles may include a plurality of first polishing elements, where at least one of the plurality of first polymer layers forms the polishing surface; and one or more second polishing elements, where at least a region of each of the one or more second polishing elements is disposed between at least one of the plurality of first polishing elements and a supporting surface of the polishing pad. One or more first polishing elements have a Shore D hardness of greater than 60, one or more second polishing elements have a Shore D hardness of from about 20 to less than 60, and the polishing article has a total Shore D hardness of greater than or about 50.

What is claimed is: 
     
         1 . A method of forming a polishing article, comprising:
 depositing one or more droplets of a first curable precursor formulation onto a support with an additive manufacturing system, wherein the first curable precursor formulation exhibits a Shore D hardness of from about 20 to less than or about 200;   depositing one or more droplets of a second curable precursor formulation onto the one or more droplets of the first curable precursor formulation with the additive manufacturing system, wherein the second curable precursor formulation exhibits a Shore D hardness of greater than or about 20 to less than or about 200 and wherein the second curable precursor formulation forms at least a portion of a polishing surface; and   curing the first curable precursor formulation and the second curable precursor formulation,   wherein the polishing article has a total polishing article Shore D hardness of greater than or about 20 to less than or about 200.   
     
     
         2 . The method of  claim 1 , wherein the first curable precursor formulation, the second curable precursor formulation, or both the first curable precursor formulation and the second curable precursor formulation comprises a polymeric material wherein the polymeric material comprises one or more of polyamides, polycarbonates, polyesters, polyethers, polyether ketones, polyethers, polyoxymethylenes, polyether sulfones, polyetherimides, polyimides, polyolefins, polysiloxanes, polysulfones, polyphenylenes, polyphenylene sulfides, polyurethanes, polystyrene, polyacrylonitriles, polyacrylates, polymethylmethacrylates, polyurethane acrylates, polyester acrylates, polyether acrylates, epoxy acrylates, polycarbonates, polyesters, melamines, polysulfones, polyvinyl materials, acrylonitrile butadiene styrene (ABS), halogenated polymers, block copolymers and copolymers thereof. 
     
     
         3 . The method of  claim 2 , wherein the polymeric material comprises a UV-curable acrylate having one or more of polyester functionality, urethane functionality, epoxy functionality, thiol functionality, or a combination thereof. 
     
     
         4 . The method of  claim 1 , wherein the second curable precursor formulation is deposited in a pattern comprising discrete spaced apart pillars, one or more circles surround a central axis, one or more spirals, or combinations thereof. 
     
     
         5 . A polishing article having a polishing surface that is configured to polish a surface of a substrate having at least one copper feature, comprising:
 a plurality of first polishing elements that each comprise a plurality of first polymer layers comprising a first polymer composition, wherein at least one of the plurality of first polymer layers forms the polishing surface; and   one or more second polishing elements that each comprise a plurality of second polymer layers comprising a second polymer composition, wherein at least a region of each of the one or more second polishing elements is disposed between at least one of the plurality of first polishing elements and a supporting surface of the polishing article,   wherein at least a portion of the plurality of first polishing elements have a Shore D hardness, at least a portion of the one or more second polishing elements have a second Shore D hardness wherein the first polishing element Shore D hardness is at least about 5% greater than a second polishing element second Shore D hardness, and wherein the polishing article has a total Shore D hardness of greater than or about 50.   
     
     
         6 . The polishing article of  claim 5 , wherein at least a portion of the plurality of first polishing elements have a Shore D hardness of greater than or about 70. 
     
     
         7 . The polishing article of  claim 5 , wherein the polishing article exhibits a storage modulus at 30° C., (E30), a storage modulus at 90° C., (E90), or both an E30 and an E90 of less than or about 1200 MPa. 
     
     
         8 . The polishing article of  claim 7 , wherein a ratio of the storage modulus at 30° C. (E30), to the storage modulus at 90° C. (E90) is from about 6 to about 30. 
     
     
         9 . The polishing article of  claim 5 , wherein one or more of the plurality of first polishing elements, one or more of the second polishing elements, of a combination thereof, comprise a pore forming agent. 
     
     
         10 . The polishing article of  claim 5 , wherein the pore forming agent is dispersed throughout the one or more of the plurality of first polishing elements, one or more of the second polishing elements, of a combination thereof to provide a porosity of from about 1 vol. % to about 50 vol. %. 
     
     
         11 . The polishing article of  claim 5 , wherein a groove height is defined between a top surface of the plurality of first polishing elements and the one or more second polishing elements, wherein the groove height is less than or about 1000 microns. 
     
     
         12 . The polishing article of  claim 5 , wherein a groove width is defined between adjacent first polishing elements of the plurality of first polishing elements, wherein the groove width is less than or about 1000 microns. 
     
     
         13 . The polishing article of  claim 5 , wherein the plurality of first polishing elements have an average Shore D hardness of greater than 60, wherein a first portion of the plurality of first polishing elements have a Shore D hardness of greater than 70, a second portion of the plurality of first polishing elements have a porosity of from about 1 vol. % to about 50 vol. %, or a combination thereof. 
     
     
         14 . The polishing article of  claim 5 , wherein at least a portion of the plurality of first polishing elements form a pattern comprising discrete spaced apart pillars, one or more circles surround a central axis, one or more spirals, or combinations thereof. 
     
     
         15 . A method of polishing a substrate comprising one or more copper features, comprising:
 engaging a support surface of the substrate with a carrier head;   polishing one or more materials on a surface of the substrate opposite the support surface, forming a polished surface, wherein the one or more materials comprises one or more copper materials;   wherein the polished surface exhibits a dish depth of less than or about 5 nm, dielectric rounding of less than 1.8 nm, a dielectric roughness of less than 0.6 nm, or a combination thereof.   
     
     
         16 . The method of  claim 15 , wherein the polished surface exhibits a dish depth of less than or about 3 nm. 
     
     
         17 . The method of  claim 15 , wherein the polished surface exhibits a dielectric rounding of less than or about 1 nm. 
     
     
         18 . The method of  claim 15 , wherein the method exhibits a risk of barrier protrusion of less than or about 50%. 
     
     
         19 . The method of  claim 15 , wherein the one or more materials further comprises an oxide, a nitride, a valve metal, or a combination thereof, wherein a removal rate of the one or more copper materials and the oxide, the valve metal, or combination thereof, differs by less than or about 20%. 
     
     
         20 . The method of  claim 15 , further comprising bonding a semiconductor component to the polished surface, wherein the component and the substrate exhibit a leakage current of less than or about 5 picoamperes.