Dishing and erosion monitor structure for damascene metal processing

Abstract

According to the preferred embodiment, an erosion and dishing monitor and monitor method are provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor structure sets embedded in a semiconductor substrate, the monitor structure sets comprising a plurality of monitor structures connected together with a plurality of connective conductors. The erosion monitor comprises a plurality of elongated conductors embedded into a semiconductor substrate, the plurality of conductors having varying conductor widths and adjacent substrate widths.

We claim: 
     
       1. A method for determining the rate of dishing occurring during a planarization process in damascene semiconductor fabrication, the method comprising the steps of: a) fabricating an dishing monitor comprising: i) a substrate   ii) a first monitor structure set embedded in said substrate, said first monitor structure set comprising a first plurality of monitor structures, said first plurality of monitor structures connected together in series with a plurality of connective channels; and   iii) a second monitor structure set embedded in said substrate, said second monitor structure set comprising a second plurality of monitor structures, said second plurality of monitor structures having an area less than said first plurality of monitor structures and connected together in series with a second plurality of connective channels; and     b) measuring the conductivity of said first and second monitor structure set after said planarization.   
     
     
       2. The method of claim 1 wherein said step of measuring the conductivity is done using a four point probe method. 
     
     
       3. A method for determining the rate of erosion occurring during a planarization process in damascene semiconductor fabrication, the method comprising the steps of: a) fabricating an erosion monitor comprising: ii) a substrate   ii) a first erosion monitor embedded in said substrate, said first erosion monitor comprising at least one elongated conductor, said elongated conductor having a first width and a first width of adjacent substrate;   iii) a second erosion monitor embedded in said substrate, said second erosion monitor comprising at least one elongated conductor, said elongated conductor having a second width and a second width of adjacent substrate;     b) measuring the conductivity of said first and second erosion monitors set after said planarization.