Cross-linker monomer comprising double bond and photoresist copolymer containing the same

Abstract

The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and k are as defined herein.

What is claimed is:  
     
       1. A photoresist polymer derived from monomers comprising: 
       (i) a cross-linker monomer of the formula:                    
        wherein  
       A is a moiety of the formula                    
       B is a moiety of the formula                    
        each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7  and R 8  is independently H, or substituted or unsubstituted linear or branched (C 1 -C 5 )alkyl; and  
       k is an integer from 0 to 3;                    
        where i is 0 or 1; and  
       (iii) at least one other suitable photoresist monomer.  
     
     
       2. The photoresist polymer of  claim 1 , wherein said cross-linker monomer is selected from the group consisting of compounds of the formula:                    
     
     
       3. The photoresist polymer of  claim 1 , wherein said cross-linker monomer is selected from the group consisting of 2,5-hexanediol diacrylate; 2,5-hexanediol dimethacrylate; 2,4-pentanediol diacrylate; 2,4-pentanediol dimethacrylate; neopentyl glycol diacrylate; and neopentyl glycol dimethacrylate. 
     
     
       4. The photoresist copolymer according to  claim 1  of the formula:                  
                   
       wherein 
       R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and k are those defined in  claim 1 ;  
       each of R 9  and R 10  is independently H, substituted or unsubstituted linear or branched (C 1 -C 5 )alkyl;  
       i is 0 or 1;  
       m and n is independently an integer from 0 to 2; and  
       the ratio of a:b:c:d:e=0-80 mol %: 1-30 mol %: 1-30 mol % 0.1-48 mol %: 10-50 mol %.  
     
     
       5. A process for preparing a photoresist polymer of  claim 1 , comprising the steps of: 
       (a) admixing  
       (i) a cross-linker monomer of the formula:                    
        wherein A, B, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and k are those defined in  claim 1 ;                    
        where i is 0 or 1e;  
       (iii) at least one other suitable photoresist monomer, and  
       (iv) a polymerization initiator; and  
       (b) providing polymerization conditions sufficient to produce said photoresist polymer from said admixture of step (a).  
     
     
       6. The process according to  claim 5 , wherein said polymerization conditions comprises heating said admixture to temperature in the range of from about 60 to about 70° C. for 4 to 24 hours under an inert atmosphere. 
     
     
       7. The process according to  claim 5 , wherein said admixture further comprises an organic solvent selected from the group consisting of cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylsulfoxide, dioxane, methylethylketone, benzene, toluene, xylene and mixtures thereof. 
     
     
       8. The process according to  claim 5 , wherein said polymerization initiator is selected from the group consisting of 2,2′-azobisisobutyronitrile (AIBN), acetylperoxide, laurylperoxide, tert-butyl peracetate, tert-butyl hydroperoxide and di-tert-butylperoxide. 
     
     
       9. The process according to  claim 5 , wherein said process further comprises the step of purifying said polymer by crystallization using a crystallization solvent selected from the group consisting of diethylether; petroleum ether; alcohol; water; and mixtures thereof. 
     
     
       10. A photoresist composition comprising: (i) a photoresist polymer of  claim 1 , (ii) an organic solvent and (iii) a photoacid generator. 
     
     
       11. The composition according to  claim 10 , wherein said photoacid generator is a sulfide or onium type compound. 
     
     
       12. The composition according to  claim 10 , wherein said photoacid generator comprises diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, diphenyl p-tert-butylphenyl triflate, triphenylsulfonium hexafluororphosphate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate, or mixtures thereof. 
     
     
       13. The composition according to  claim 10 , wherein the amount of said photoacid generator is in the range of from about 0.05 to about 10% by weight of said photoresist polymer. 
     
     
       14. The composition according to  claim 10 , wherein said organic solvent is selected from the group consisting of methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether acetate, cyclohexanone, cyclopentanone, 2-heptanone and (2-methoxy)ethyl acetate. 
     
     
       15. The composition according to  claim 10 , wherein the amount of said organic solvent is in the range of from about 200 to about 1000% by weight of said photoresist polymer. 
     
     
       16. A process for forming a photoresist pattern, comprising the steps of: (a) coating said photoresist composition of  claim 10  on a substrate of semiconductor device to form a photoresist film; (b) exposing said photoresist film to light using a light source; and (c) developing said exposed photoresist film. 
     
     
       17. The process according to  claim 16 , further comprising: a baking step before and/or after exposure of step (b). 
     
     
       18. The process according to  claim 17 , wherein the baking step is performed at 70 to 200° C. 
     
     
       19. The process according to  claim 16 , wherein said light source is ArF, KrF, VUV, EUV, E-beam, X-ray or ion beam. 
     
     
       20. The process according to  claim 16 , wherein said photoresist film is irradiated with from about 1 mJ/cm 2  to about 100 mJ/cm 2  of light-exposure energy. 
     
     
       21. A semiconductor device manufactured by the process of  claim 16 .