Pattern forming material and method of pattern formation

Abstract

A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2 and, and an acid generator:wherein R1 and R3 are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R2 is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R4 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0<a<1, 0<b<1 and 0<A+B≤1.

What is claimed is:  
     
       1. A pattern formation material comprising: 
       a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2; and  
       an acid generator:                    
       wherein R 1  and R 3  are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 4  is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0<a<1, 0<b<1 and 0<a+b≦1.  
     
     
       2. The pattern formation material of  claim 1 , 
       wherein said base polymer is prepared through radical polymerization of said first unit and said second unit.  
     
     
       3. The pattern formation material of  claim 1 , 
       wherein said base polymer is prepared by obtaining a polymer through radical polymerization of said first unit and a precursor obtained before substituting R 4  for said second unit and by allowing R 4  to bond to said precursor included in said polymer.  
     
     
       4. A pattern formation material comprising: 
       a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 2 and a third unit represented by Chemical Formula 3; and  
       an acid generator:                    
       wherein R 1 , R 3  and R 5  are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 4  is a protecting group released by an acid; m is an integer of 0 through 5; n is an integer of 0 through 5; and a, b and c satisfy 0<a<1, 0<b<1, 0<c<1 and 0<a+b+c≦1.  
     
     
       5. The pattern formation material of  claim 4 , 
       wherein said base polymer is prepared through radical polymerization of said first unit, said second unit and said third unit.  
     
     
       6. The pattern formation material of  claim 4 , 
       wherein said base polymer is prepared by obtaining a polymer through radical polymerization of said first unit and said third unit and by substituting R 4  for some of H of OH groups of said third unit included in said polymer.  
     
     
       7. A pattern formation material comprising: 
       a base polymer including a first unit represented by Chemical Formula  1  and a second unit represented by Chemical Formula 4; and  
       an acid generator:                    
       wherein R 1  is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 6  is a protecting group released by an acid; p is an integer of 0 through 5; and a and d satisfy 0<a<1, 0<d <1 and 0<a+d≦1.  
     
     
       8. The pattern formation material of  claim 7 , 
       wherein said base polymer is prepared through radical polymerization of said first unit and said second unit.  
     
     
       9. The pattern formation material of  claim 7 , 
       wherein said base polymer is prepared by obtaining a polymer through radical polymerization of said first unit and a precursor obtained before substituting R 6  for said second unit and by allowing R 6  to bond to said precursor included in said polymer.  
     
     
       10. A pattern formation material comprising: 
       a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5 ; and  
       an acid generator:                    
       wherein R 1  is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 6  is a protecting group released by an acid; p is an integer of 0 through 5; q is an integer of 0 through 5; and a, d and e satisfy 0<a<1, 0<d<1, 0<e<1 and 0<a+d+e≦1.  
     
     
       11. The pattern formation material of  claim 10 , 
       wherein said base polymer is prepared through radical polymerization of said first unit, said second unit and said third unit.  
     
     
       12. The pattern formation material of  claim 10 , 
       wherein said base polymer is prepared by obtaining a polymer through radical polymerization of said first unit and said third unit and by substituting R 6  for some of H of OH groups of said third unit included in said polymer.  
     
     
       13. A pattern formation method comprising the steps of: 
       forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:                    
       wherein R 1  and R 3  are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 4  is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0<a<1, 0<b<1 and 0<a+b≦1;  
       irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure; and  
       forming a resist pattern by developing said resist film after the pattern exposure.  
     
     
       14. A pattern formation method comprising the steps of: 
       forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 2 and a third unit represented by Chemical Formula 3, and an acid generator:                    
       wherein R 1 , R 3  and R 5  are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 4  is a protecting group released by an acid; m is an integer of 0 through 5; n is an integer of 0 through 5; and a, b and c satisfy 0<a<1, 0<b<1, 0<c<1 and 0<a+b+c≦1;  
       irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure; and  
       forming a resist pattern by developing said resist film after the pattern exposure.  
     
     
       15. A pattern formation method comprising the steps of: 
       forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 4, and an acid generator:                    
       wherein R 1  is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 6  is a protecting group released by an acid; p is an integer of 0 through 5; and a and d satisfy 0<a<1, 0<d<1 and 0<a+d≦1;  
       irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure; and  
       forming a resist pattern by developing said resist film after the pattern exposure.  
     
     
       16. A pattern formation method comprising the steps of: 
       forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5, and an acid generator:                    
       wherein R 1  is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R 2  is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R 6  is a protecting group released by an acid; p is an integer of 0 through 5; q is an integer of 0 through 5; and a, d and e satisfy 0<a<1, 0<d<1, 0<e<1 and 0<a+d+e≦1;  
       irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure; and  
       forming a resist pattern by developing said resist film after the pattern exposure.  
     
     
       17. The pattern formation method of any of claims  13  through  16 , 
       wherein said exposing light is a Xe 2  laser beam, a F 2  laser beam, a Kr 2  laser beam, an ArKr laser beam or an Ar 2  laser beam.  
     
     
       18. The pattern formation method of any of claims  13  through  16 , 
       wherein said exposing light is a soft-X ray beam.  
     
     
       19. The pattern formation method of any of claims  13  through  16 , 
       wherein said exposing light is a hard-X ray beam.