US7611987B2ExpiredUtilityA1

Defectivity and process control of electroless deposition in microelectronics applications

82
Assignee: ENTHONEPriority: Sep 20, 2005Filed: Oct 5, 2005Granted: Nov 3, 2009
Est. expirySep 20, 2025(expired)· nominal 20-yr term from priority
Inventors:Qingyun ChenCharles ValverdeVincent Paneccasio, Jr.Nicolai PetrovDaniel StritchChristian WittRichard Hurtubise
H10P 14/46H10W 20/037C23C 18/32C09D 5/10C23C 18/50C23C 18/34
82
PatentIndex Score
6
Cited by
90
References
17
Claims

Abstract

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Claims

exact text as granted — not AI-modified
1. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate. 
     
     
       2. The electroless deposition composition of  claim 1  wherein the triethanolamine salt of lauryl sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       3. The electroless deposition composition of  claim 1  further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3   2− , HSO 3   − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 
     
     
       4. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate. 
     
     
       5. The electroless deposition composition of  claim 4  wherein the ammonium laureth sulfate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       6. The electroless deposition composition of  claim 4  further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3   2− , HSO 3   − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 
     
     
       7. An electroless deposition composition for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate. 
     
     
       8. The electroless deposition composition of  claim 7  wherein the alkyldiphenyloxide disulfonate is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       9. The electroless deposition composition of  claim 7  wherein the leveler is diphenyl oxide disulfonic acid. 
     
     
       10. The electroless deposition composition of  claim 7  further comprising an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3   2− , HSO 3   − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 
     
     
       11. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising a triethanolamine salt of lauryl sulfate. 
     
     
       12. The method of  claim 11  wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       13. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an ammonium laureth sulfate. 
     
     
       14. The method of  claim 13  wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       15. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from the group consisting of Co ions and Ni ions, and b) a leveler comprising an alkyldiphenyloxide disulfonate. 
     
     
       16. The method of  claim 15  wherein the leveler is present in the electroless deposition composition at a concentration between about 20 ppm and about 800 ppm. 
     
     
       17. The method of  claim 15  wherein the leveler is diphenyl oxide disulfonic acid.

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