Integrated chip package structure using organic substrate and method of manufacturing the same

Abstract

An integrated chip package structure and method of manufacturing the same is by adhering dies on an organic substrate and forming a thin-film circuit layer on top of the dies and the organic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.

What is claimed is: 
     
       1. A circuit component comprising:
 an organic substrate; 
 a die over said organic substrate, wherein said die comprises multiple active devices; 
 a polymer layer over said organic substrate and in contact with at least one sidewall of said die; 
 a glass substrate over said polymer layer, said die and said organic substrate, where a first opening in said glass substrate passes vertically through said glass substrate; 
 a circuit device over said glass substrate; and 
 a first interconnecting structure comprising a first portion in said first opening and a second portion over said glass substrate, wherein said second portion is connected to said die through said first portion. 
 
     
     
       2. The circuit component of  claim 1 , wherein said organic substrate comprises a printed circuit board. 
     
     
       3. The circuit component of  claim 1 , wherein said glass substrate has a thickness between 2 and 200 micrometers. 
     
     
       4. The circuit component of  claim 1 , wherein said glass substrate has a width greater than that of said die. 
     
     
       5. The circuit component of  claim 1 , wherein said first interconnecting structure comprises copper. 
     
     
       6. The circuit component of  claim 1 , wherein said first interconnecting structure comprises electroplated copper. 
     
     
       7. The circuit component of  claim 1 , wherein the circuit device comprises a passive device over said glass substrate. 
     
     
       8. The circuit component of  claim 1 , wherein the circuit device comprises a resistor over said glass substrate. 
     
     
       9. The circuit component of  claim 1 , wherein the circuit device comprises a comb-shaped capacitor over said glass substrate. 
     
     
       10. The circuit component of  claim 1 , wherein the circuit device comprises a capacitor over said glass substrate. 
     
     
       11. The circuit component of  claim 1 , wherein the circuit device comprises an inductor over said glass substrate. 
     
     
       12. The circuit component of  claim 1 , wherein the circuit device comprises a spiral-shaped inductor over said glass substrate. 
     
     
       13. The circuit component of  claim 1 , wherein the circuit device comprises a wave guide over said glass substrate. 
     
     
       14. The circuit component of  claim 1 , wherein the circuit device comprises a filter over said glass substrate. 
     
     
       15. The circuit component of  claim 1 , wherein the circuit device comprises a micro electronic mechanical sensor (MEMS) over said glass substrate. 
     
     
       16. The circuit component of  claim 1  further comprising a dielectric layer over said glass substrate and said first interconnecting structure. 
     
     
       17. The circuit component of  claim 1  further comprising a dielectric layer over said glass substrate and said first interconnecting structure and a second interconnecting structure over said dielectric layer, wherein said second interconnecting structure is connected to said first interconnecting structure through a second opening in said dielectric layer. 
     
     
       18. The circuit component of  claim 1  further comprising a gold bump over said glass substrate. 
     
     
       19. The circuit component of  claim 1  further comprising a solder bump over said glass substrate. 
     
     
       20. The circuit component of  claim 1 , wherein said first opening is laser-formed. 
     
     
       21. The circuit component of  claim 1 , wherein said first interconnecting structure further comprises a third portion vertically over said glass substrate, but not vertically over said die, wherein said third portion is connected to said first portion through said second portion. 
     
     
       22. A chip package comprising:
 an organic substrate; 
 a die over said organic substrate, wherein said die comprises multiple active devices; 
 a glass substrate over said die and said organic substrate, wherein a first opening in said glass substrate passes vertically through said glass substrate; 
 a first interconnecting structure comprising a first portion in said first opening and a second portion over said glass substrate, wherein said second portion is connected to said die through said first portion; and 
 a passive device over said glass substrate, wherein said passive device comprises a comb-shaped capacitor. 
 
     
     
       23. The chip package of  claim 22 , wherein said glass substrate has a thickness between 2 and 200 micrometers. 
     
     
       24. The chip package of  claim 22 , wherein said glass substrate has a width greater than that of said die. 
     
     
       25. The chip package of  claim 22 , wherein said first interconnecting structure comprises copper. 
     
     
       26. The chip package of  claim 22 , wherein said first interconnecting structure comprises electroplated copper. 
     
     
       27. The chip package of  claim 22  further comprising a dielectric layer over said glass substrate and said first interconnecting structure. 
     
     
       28. The chip package of  claim 22  further comprising a dielectric layer over said glass substrate and said first interconnecting structure and a second interconnecting structure over said dielectric layer, wherein said second interconnecting structure is connected to said first interconnecting structure through a second opening in said dielectric layer. 
     
     
       29. The chip package of  claim 22  further comprising a gold bump over said glass substrate. 
     
     
       30. The chip package of  claim 22  further comprising a solder bump over said glass substrate. 
     
     
       31. The chip package of  claim 22 , wherein said first opening is laser-formed. 
     
     
       32. The chip package of  claim 22 , wherein said first interconnecting structure further comprises third portion vertically over said glass substrate, but not vertically in line with said die, wherein said third portion is connected to said first portion through said second portion.