Semiconductor packaging with internal wiring bus

Abstract

A packaged semiconductor includes inner bond fingers, at least first and second semiconductor dies, and an interposer. The packaged semiconductor further includes wiring between the first and second semiconductor dies and the inner bond fingers, wiring between the interposer and the inner bond fingers, and wiring between the interposer and the first and second semiconductor dies. The wiring between the interposer and the first and second semiconductor dies thereby reduces the count of inner bond fingers needed for the wiring between the first and second semiconductor dies and the inner bond fingers. The interposer further provides indirect access to the inner bond fingers when the inner bond fingers are inaccessible by the first and second semiconductor dies.

What is claimed is: 
     
       1. A method comprising:
 mounting an interposer on a surface of a die pad, the interposer comprising (i) a first ground connection that is coupled via one or more wires to an electrical ground structure, (ii) a second ground connection that is coupled to the first ground connection, (iii) a first power connection that is coupled via one or more wires to one or more bond fingers supplying power, and (iv) a second power connection that is coupled to the first power connection; 
 mounting a first semiconductor die on the surface of the die pad, wherein the first semiconductor die is positioned side-by-side to the interposer; 
 mounting a second semiconductor die on the interposer; 
 connecting the first semiconductor die to (i) bond fingers, (ii) the second ground connection, and (iii) the second power connection using wiring; and 
 connecting the second semiconductor die to (i) bond fingers, (ii) the second ground connection, and (iii) the second power connection using wiring. 
 
     
     
       2. The method of  claim 1 , wherein the (i) first semiconductor die and (ii) the interposer is mounted on the surface of the die pad using a die attach material. 
     
     
       3. The method of  claim 1 , further comprising:
 connecting the first ground connection to the electrical ground structure using wiring to provide indirect access to the electrical ground structure for the first semiconductor die and the second semiconductor die; and 
 connecting the first power connection to bond fingers using wiring to provide indirect access to bond fingers for the first semiconductor die and the second semiconductor die. 
 
     
     
       4. The method of  claim 3 , wherein the electrical ground structure comprises a ring-shaped structure that surrounds the first semiconductor die and the second semiconductor die. 
     
     
       5. The method of  claim 1 , wherein the interposer functions as a capacitor or an inductor. 
     
     
       6. The method of  claim 1 , wherein the interposer comprises at least one of (i) a ball-grid array (BGA) substrate material and (ii) a silicon die. 
     
     
       7. The method of  claim 1 , further comprising:
 connecting the first semiconductor die and the second semiconductor die using wiring. 
 
     
     
       8. The method of  claim 1 , further comprising:
 refraining from coupling, via wires, the first ground connection to either of (i) the first semiconductor die and (ii) the second semiconductor die. 
 
     
     
       9. The method of  claim 1 , further comprising:
 refraining from coupling, via wires, the first power connection to either of (i) the first semiconductor die and (ii) the second semiconductor die. 
 
     
     
       10. The method of  claim 1 , wherein:
 the first ground connection is coupled via a first plurality of wires to the electrical ground structure; and 
 the first power connection is coupled via a second plurality of wires to the one or more bond fingers supplying power.