Semiconductor device and fabricating method thereof

Abstract

A semiconductor device and a fabrication method thereof are provided. An electrically conductive elastic member is formed on a semiconductor die, and a conductive bump is formed on the elastic member. Accordingly, since the conductive bump is formed on the elastic member, or to protrude from a top surface of the elastic member, the height and thus diameter of the conductive bump is reduced allowing a fine pitch to be realized. Further, the elastic member is elastic and thus mitigates external impacts from being transferred from the conductive bump to the semiconductor die.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a semiconductor die comprising:
 an active surface comprising a bond pad; 
 a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad; 
 
 an elastic member on the active surface of the semiconductor die comprising:
 a bottom surface on the first passivation layer; 
 a top surface spaced above the first passivation layer; and 
 a sidewall surface extending between the bottom surface and the top surface; 
 
 a redistribution layer covering the bond pad and the elastic member; 
 a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the redistribution layer; and 
 a conductive bump formed on the redistribution layer corresponding to the elastic member, wherein the conductive bump surrounds the top surface of the elastic member and at least the top portion of the sidewall surface of the elastic member. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the elastic member protrudes from the active surface of the semiconductor die. 
     
     
       3. The semiconductor device of  claim 1 , wherein the redistribution layer is formed on the bond pad, the top surface and the sidewall surface of the elastic member. 
     
     
       4. The semiconductor device of  claim 1 , wherein the conductive bump is exposed from the second passivation layer. 
     
     
       5. A semiconductor device comprising:
 a semiconductor die comprising:
 an active surface comprising a bond pad; 
 a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad; 
 
 an elastic member on the active surface of the semiconductor die; 
 a redistribution layer covering the bond pad and the elastic member; 
 a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the redistribution layer; 
 a conductive bump formed on the redistribution layer corresponding to the elastic member; and 
 a polyimide layer between the first passivation layer and the redistribution layer and between the first passivation layer and the elastic member. 
 
     
     
       6. The semiconductor device of  claim 1 , further comprising an under bump metallurgy (UBM) layer between the redistribution layer and the conductive bump. 
     
     
       7. The semiconductor device of  claim 6 , wherein the UBM layer is formed along a top surface and a sidewall surface of the elastic member. 
     
     
       8. A semiconductor device comprising:
 a semiconductor die comprising:
 an active surface comprising a bond pad; 
 a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad; 
 
 an elastic member formed on the bond pad; 
 an under bump metallurgy (UBM) layer on the elastic member and in contact with the bond pad; 
 a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the UBM layer; and 
 a conductive bump formed on the UBM layer corresponding to the elastic member. 
 
     
     
       9. The semiconductor device of  claim 8 , wherein a bottom surface of the elastic member is smaller than the area of the bond pad. 
     
     
       10. The semiconductor device of  claim 9 , wherein a peripheral portion of the bond pad is exposed between the elastic member and the first passivation layer. 
     
     
       11. The semiconductor device of  claim 10 , wherein the UBM layer contacts the peripheral portion of the bond pad. 
     
     
       12. A semiconductor device comprising:
 a semiconductor die comprising a bond pad on an active surface of the semiconductor die; 
 an elastic member on the active surface of the semiconductor die; 
 a redistribution layer on the elastic member and the bond pad, wherein the redistribution layer is formed on a top surface and a sidewall surface of the elastic member; and 
 a conductive bump on the redistribution layer corresponding to the elastic member, wherein the conductive bump surrounds the top surface and at least the top portion of the sidewall surface of the elastic member. 
 
     
     
       13. The semiconductor device of  claim 12 , wherein the elastic member protrudes from the active surface of the semiconductor die.