US8853867B2ActiveUtilityA1

Encapsulant for a semiconductor device

83
Assignee: FREESCALE SEMICONDUCTOR INCPriority: Oct 15, 2012Filed: Jan 31, 2014Granted: Oct 7, 2014
Est. expiryOct 15, 2032(~6.3 yrs left)· nominal 20-yr term from priority
Inventors:Sheila F. ChopinVarughese MathewLeo M. Higgins, IiiChu-Chung Lee
H10W 72/522H10W 74/00H10W 90/756H10W 72/5363H10W 72/5528H10W 72/07555H10W 72/536H10W 72/952H10W 72/9415H10W 72/59H10W 72/983H10W 72/075H10W 90/736H10W 72/5525H10W 74/473C08L 63/00H01L 23/28H01L 23/48H01L 23/295
83
PatentIndex Score
6
Cited by
13
References
20
Claims

Abstract

A mold compound is provided for encapsulating a semiconductor device ( 101 ). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A mold compound for encapsulating an electronic device, the mold compound comprising:
 silica fillers; 
 epoxy resin system; and 
 beneficial ions that are beneficial with respect to copper ball bond corrosion, 
 wherein a total level of the beneficial ions in the mold compound is at least approximately 500 ppm, and 
 the beneficial ions are ions selected from the group consisting of formate (HCOO) − , acetate (CH 3 CO 2 ) − , and nitrite (NO 2 ) − . 
 
     
     
       2. The mold compound of  claim 1 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm. 
     
     
       3. The mold compound of  claim 1 , wherein the total level of the beneficial ions in the mold compound is over 600 ppm. 
     
     
       4. The mold compound of  claim 3 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm. 
     
     
       5. The mold compound of  claim 1 , wherein the beneficial ions are a combination of formate (HCOO) −  and acetate (CH 3 CO 2 ) −  ions. 
     
     
       6. The mold compound of  claim 5 , wherein the total level of the beneficial ions in the mold compound is less than or equal to approximately 2000 ppm. 
     
     
       7. The mold compound of  claim 1 , wherein the beneficial ions are nitrite (NO 2 ) −  ions. 
     
     
       8. The mold compound of  claim 1 ,
 wherein a pH level of the mold compound is 6.0-8.0, 
 a level of chloride ions in the mold compound is less than or equal to 5 ppm, and 
 an operating voltage level of the electronic device is less than or equal to 65V. 
 
     
     
       9. The mold compound of  claim 1 , wherein at least one of:
 a moisture absorption level of the mold compound is less than 0.3% by weight, 
 an oxalate ion level of the mold compound is less than or equal to 50 ppm, and 
 a magnesium ion level of the mold compound is at least 200 ppm. 
 
     
     
       10. A semiconductor device package comprising:
 an electronic device that includes an aluminum bond pad; 
 a copper wire bonded to the aluminum bond pad; and 
 an encapsulant, the electronic device and the copper wire being encapsulated by the encapsulant, 
 wherein the encapsulant comprises:
 epoxy resin system, and 
 beneficial ions that are beneficial with respect to copper ball bond corrosion, a total level of the beneficial ions in the encapsulant being less than or equal to approximately 2000 ppm. 
 
 
     
     
       11. The semiconductor device package of  claim 10 , wherein the total level of the beneficial ions in the encapsulant is at least approximately 500 ppm. 
     
     
       12. The semiconductor device package of  claim 10 , wherein the beneficial ions are ions selected from the group consisting of formate, acetate, carbonate, and nitrite. 
     
     
       13. The semiconductor device package of  claim 12 , wherein the total level of the beneficial ions in the encapsulant is at least approximately 500 ppm. 
     
     
       14. The semiconductor device package of  claim 12 , wherein the beneficial ions are a combination of formate (HCOO) −  and acetate (CH 3 CO 2 ) −  ions. 
     
     
       15. The semiconductor device package of  claim 12 , wherein the beneficial ions are nitrite (NO 2 ) −  ions. 
     
     
       16. A mold compound for encapsulating an electronic device, the mold compound comprising:
 silica fillers; 
 epoxy resin system; and 
 beneficial ions that are beneficial with respect to copper ball bond corrosion, 
 wherein a total level of the beneficial ions in the mold compound is at least approximately 200 ppm, and 
 the beneficial ions are ions selected from the group consisting of phosphate (PO 4 ) 3−  and nitrite (NO 2 ) − . 
 
     
     
       17. The mold compound of  claim 16 , wherein the total level of phosphate (PO 4 ) 3−  ions in the mold compound is at least approximately 200 ppm. 
     
     
       18. The mold compound of  claim 16 , wherein the total level of nitrite (NO 2 ) −  ions in the mold compound is at least approximately 200 ppm. 
     
     
       19. The mold compound of  claim 16 ,
 wherein a pH level of the mold compound is 6.0-8.0, 
 a level of chloride ions in the mold compound is less than or equal to 5 ppm, and 
 an operating voltage level of the electronic device is less than or equal to 65V. 
 
     
     
       20. The mold compound of  claim 16 , wherein at least one of:
 a moisture absorption level of the mold compound is less than 0.3% by weight, 
 an oxalate ion level of the mold compound is less than or equal to 50 ppm, and 
 a magnesium ion level of the mold compound is at least 200 ppm.

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