Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

Abstract

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1, A 1 to A 3 , X 1 to X 3 , L 1 , L 2 , n and m are the same as described in the detailed description.

The invention claimed is: 
     
       1. A monomer for a hardmask composition, the monomer being represented by the following Chemical Formula 1: 
       
         
           
           
               
               
           
         
         wherein, in the above Chemical Formula 1, 
         A 1  to A 3  are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group, wherein at least one of A 1  to A 3  is a polycyclic aromatic group; 
         X 1  to X 3  are each independently hydrogen, a hydroxy group, a substituted or unsubstituted amino group, a halogen atom, a halogen-containing group, or a combination thereof, 
         L 1  and L 2  are each independently a single bond or a substituted or unsubstituted C1 to C6 alkylene group, 
         n is an integer ranging from 2 to 5, and 
         m is an integer ranging from 1 to 3. 
       
     
     
       2. The monomer as claimed in  claim 1 , wherein A 1  to A 3  are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group selected from the following Group 1: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         wherein, in the Group 1, 
         Z 1  and Z 2  are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, C═O, NR a , oxygen (O), sulfur (S), or a combination thereof, wherein R a  is hydrogen, a substituted or unsubstituted C1 to C 10 alkyl group, a halogen atom, or a combination thereof, and 
         Z 3  to Z 17  are independently C═O, NR a , oxygen (O), sulfur (S), CR b R c , or a combination thereof, wherein R a  to R c  are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof. 
       
     
     
       3. The monomer as claimed in  claim 1 , wherein A 1  and A 3  are each independently a benzene group, a naphthalene group, a biphenyl group, or a pyrene group, and
 A 2  is a pyrene group, a perylene group, a benzoperylene group, or a coronene group. 
 
     
     
       4. The monomer as claimed in  claim 1 , the monomer being represented by the following Chemical Formula 2 or 3: 
       
         
           
           
               
               
           
         
         wherein, in the above Chemical Formula 2 and 3, 
         A 1  to A 3  and X 1  to X 3  are each independently defined the same as those of Chemical Formula 1. 
       
     
     
       5. The monomer as claimed in  claim 4 , the monomer being represented by one selected from the following Chemical Formulae 4 to 14: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
       6. The monomer as claimed in  claim 1 , wherein the monomer has a molecular weight of 500 to 5,000. 
     
     
       7. A hardmask composition, comprising
 a monomer represented by the following Chemical Formula 1, and 
 a solvent: 
 
       
         
           
           
               
               
           
         
         wherein, in the above Chemical Formula 1, 
         A 1  to A 3  are each independently a substituted or unsubstituted cyclic group, wherein at least one of the A 1  to A 3  is a polycyclic aromatic group, 
         X 1  to X 3  are each independently hydrogen, a hydroxy group, a substituted or unsubstituted amino group, a halogen atom, a halogen-containing group, or a combination thereof, 
         L 1  and L 2  are each independently a single bond or a substituted or unsubstituted C1 to C6 alkylene group, 
         n is an integer ranging from 2 to 5, and 
         m is an integer ranging from 1 to 3. 
       
     
     
       8. The hardmask composition as claimed in  claim 7 , wherein A 1  to A 3  are each independently a substituted or unsubstituted aliphatic or aromatic cyclic group selected from the following Group 1: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         wherein, in the Group 1, 
         Z 1  and Z 2  are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, C═O, NR a , oxygen (O), sulfur (S), or a combination thereof, wherein le is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, or a combination thereof, and 
         Z 3  to Z 17  are independently C═O, NR a , oxygen (O), sulfur (S), CR b R c ' or a combination thereof, wherein R a  to R c  are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof. 
       
     
     
       9. The hardmask composition as claimed in  claim 7 , wherein A 1  and A 3  are each independently a benzene group, a naphthalene group, biphenyl group or a pyrene group, and
 A 2  is a pyrene group, a perylene group, a benzoperylene group, or a coronene group. 
 
     
     
       10. The hardmask composition as claimed in  claim 7 , wherein the monomer is represented by the following Chemical Formula 2 or 3: 
       
         
           
           
               
               
           
         
         wherein, in the above Chemical Formula 2 and 3, 
         A 1  to A 3  and X 1  to X 3  are each independently defined the same as those in Chemical Formula 1. 
       
     
     
       11. The hardmask composition as claimed in  claim 10 , wherein the monomer is represented by one selected from the following Chemical Formulae 4 to 14: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
       12. The hardmask composition as claimed in  claim 7 , wherein the monomer has a molecular weight of 500 to 5,000. 
     
     
       13. The hardmask composition as claimed in  claim 7 , wherein the monomer is included in an amount of 0.1 to 50 wt% based on the total amount of the hardmask composition. 
     
     
       14. A method of forming patterns, comprising
 providing a material layer on a substrate, 
 applying the hardmask composition as claimed in  claim 7  on the material layer, 
 heat-treating the hardmask composition to form a hardmask layer, 
 forming a silicon-containing thin layer on the hardmask layer, 
 forming a photoresist layer on the silicon-containing thin layer, 
 exposing and developing the photoresist layer to form a photoresist pattern 
 selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and 
 etching an exposed part of the material layer. 
 
     
     
       15. The method as claimed in  claim 14 , wherein the hardmask composition is applied using a spin-on coating method.