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Integrated type ion shield for semiconductor manufacturing apparatus

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Assignee: HITACHI HIGH TECH CORPPriority: Jul 24, 2018Filed: Jan 23, 2019Granted: Nov 10, 2020
Est. expiryJul 24, 2038(~12 yrs left)· nominal 20-yr term from priority
Inventors:Yutaka KouzumaMichiaki KobayashiKazuyuki HirozaneNobuya MiyoshiKohei KawamuraHiroyuki Kobayashi
64
PatentIndex Score
9
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58
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1
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Claims

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CLAIM 
     
       The ornamental design for an integrated type ion shield for semiconductor manufacturing apparatus, as shown and described.

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